Photon- and electron-induced surface voltage in electron spectroscopies on ZnSe(0 0 1)

The surface band bending in ZnSe(0 0 1), as a function of the temperature, is investigated both in the valence band (by photoemission) and in the conduction band (by inverse photoemission and absorbed current spectroscopies). Two different mechanisms are invoked for interpreting the experimental data: the band bending due to surface states, and the surface voltage induced by the incident beam. While the latter is well known in photoemission (surface photovoltage), we demonstrate the existence of a similar effect in inverse photoemission and absorbed current spectroscopies, induced by the incident electrons instead of photons. These results point to the importance of considering the surface voltage effect even in electron-in techniques for a correct evaluation of the band bending.     

The bulk band structure and inner potential of layered In4Se3

The layered In₄Se₃ system does have a bulk band structure (i.e. discernable and significant band dispersion) perpendicular to the cleavage plane. Band widths (the extent of dispersion) of 300 meV or more are observed, for In-p and Se-p weighted bands within the valence region, and is indicative of a bulk band structure. Two-dimensionality of state is clearly not conserved, and there must exist interactions between layers sufficient to support a bulk band structure.     

Electronic structure of the Sb-induced Si(1 1 3)2 × 5 surface

The surface electronic structure of Sb/Si(1 1 3)2 × 5 was investigated by angle-resolved photoemission spectroscopy experiments. This reveals Sb/Si(1 1 3)2 × 5 to have three surface bands with anisotropic two-dimensional characteristics. The band widths of the surface bands along is larger than along . The number of surface bands of Sb/Si(1 1 3)2 × 5 and their band dispersions along and are quite analogous with those of Sb/Si(1 1 3)2 × 2 composed of Sb adatom and Si tetramer chains. The electronic structure analogy suggests that Sb/Si(1 1 3)2 × 5 and Sb/Si(1 1 3)2 × 2 have common building blocks such as Sb adatom and Si tetramer chains.     

Analysis of the electronic structure of Hf(Si0.5As0.5)As by X-ray photoelectron and photoemission spectroscopy

The ternary hafnium silicon arsenide, Hf(Si_xAs_1−x)As, has been synthesized with a phase width of 0.5?x?0.7. Single-crystal X-ray diffraction studies on Hf(Si_0.5As_0.5)As showed that it adopts the ZrSiS-type structure (Pearson symbol tP6, space group P4/nmm, Z=2, a=3.6410(5) Å, c=8.155(1) Å). Physical property measurements indicated that it is metallic and Pauli paramagnetic. The electronic structure of Hf(Si_0.5As_0.5)As was investigated by examining plate-shaped crystals with laboratory-based X-ray photoelectron spectroscopy (XPS) and synchrotron radiation photoemission spectroscopy (PES). The Si 2p and As 3d XPS binding energies were consistent with assignments of anionic Si¹⁻ and As^1-. However, the Hf charge could not be determined by analysis of the Hf 4f binding energy because of electron delocalization in the 5d band. To examine these charge assignments further, the valence band spectrum obtained by XPS and PES was interpreted with the aid of TB-LMTO band structure calculations. By collecting the PES spectra at different excitation energies to vary the photoionization cross-sections, the contributions from different elements to the valence band spectrum could be isolated. Fitting the XPS valence band spectrum to these elemental components resulted in charges that confirm that the formulation of the product is Hf²⁺[(Si_0.5As_0.5)As]²⁻.     

Theory of angle-resolved photoemission for in general disordered complex lattices: applications to the off-normal emission from TiNx (100)

The theory of angle resolved photoemission for in general disordered complex lattices of semi-infinite solid systems is presented. An application of this theory to the He-I off-normal photoemission spectra from TiN_0.83 (100) reveal the same kind of vacancy-like related peaks observed for powder samples in angle integrated spectra in the UPS and XPS regime.Dedicated to Professor H. Nowotny on the occasion of his 75th birthday     

Electronic structure of LiMnO : X-ray emission and photoelectron spectra and band structure calculations

The electronic structure of LiMnO₂ and Li₂MnO₃ was studied by means of X-ray photoelectron and soft X-ray emission spectroscopy. For LiMnO₂, LSDA and LSDA+U calculations were carried out. The LSDA+U calculations are in rather good agreement with the measured valence-band structure as well as with the magnetic and electrical properties of LiMnO₂. It is shown that the band gap in LiMnO₂ is determined by the charge-transfer effect. Received 15 March 1999 and Received in final form 14 July 1999     

Doping-dependent electronic structure of cuprates studied using angle-scanned photoemission

Full k -maps of the electronic structure near the Fermi level of differently doped cuprates measured with angle-scanned photoelectron spectroscopy are presented. The valence band maximum of the antiferromagnetic insulator Sr₂CuO₂Cl₂, which is taken as a representative of an undoped cuprate, and the Fermi surfaces of overdoped, optimally doped and underdoped Bi₂Sr₂CaCu₂O_8+δ high-temperature superconductors are mapped in the normal state. The results confirm the existence of large Luttinger Fermi surfaces at high doping with a Fermi surface volume proportional to (1+x), where x is the hole concentration. At very low doping, however, we find that this assumption based on Luttinger's theorem is not fulfilled. This implies a change in the topology of the Fermi surface. Furthermore the intensity of the shadow bands observed on the Fermi surface of Bi₂Sr₂CaCu₂O_8+δ as a function of the doping is discussed. Received 12 October 1999 and Received in final form 12 April 2000     

吡嗪分子在硅(100)面吸附构型的XPS和NEXAFS谱理论研究

本文利用X射线谱研究了吡嗪(C₄H₄N₂)分子共价吸附于硅(100)面的几种吸附构型的几何结构和电子结构. 利用密度泛函理论结合团簇模型,对预测的吸附结构的碳K壳层(1s)X射线光电子能谱(XPS)和近边X射线吸收精细结构(NEXAFS)谱进行了模拟. 计算结果阐明了XPS和NEXAFS谱与不同吸附构型的对应关系. 与XPS谱相比,NEXAFS谱对所研究的吡嗪/硅(100)体系的结构有明显的依赖性,可以很好地用于结构鉴定. 根据碳原子的分类,研究了在NEXAFS光谱中不同化学环境下碳原子的光谱成分.