Optical Add/Drop Multiplexers Based on Fiber Gratings Tuned by Magnetic Fields

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多通道心磁系统标定方法研究

在多通道超导量子干涉器件（SQUID）磁探测系统中,磁场电压转换系数（∂ B/∂ V）是系统的一个重要参数由于SQUID器件和读出电路之间不可避免地存在差异性因此对传感器系统进行系统标定（每个通道的单独标定）显得十分重要本文采用（PCB） 板印制圆形线圈对36通道心磁系统进行标定,并与传统的亥姆霍兹方形线圈产生均匀场的标定方法进行比较结果显示PCB圆形线圈的标定结果 在1.46–1.73 pT·mV^-1 之间,亥姆霍兹方形线圈标定的结果大都在1.56–1.64 pT·mV^-1之间,结果基本一致. 关键词： 超导量子干涉器件 磁探测 磁场-电压转换系数 系统标定     

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通过计算得出EAST快动探针交换装置所用材料的理论厚度,运用CATIA绘图软件建立交换装置4mm盒形和筒形结构设计模型。将模型导入ANSYS软件进行前期处理和网格划分,运用有限元法对模型进行整体强度分析,获得了最大应力和应变数据。通过增加设计壁厚,建立了5mm不带加强筋筒形和盒形结构进行了有限元分析。通过对分析结果的优化和比较,得到5mm筒形不带加强筋方案的最大应力和应变最小,结构设计最优。最后,对模型制造了预研件并进行真空捡漏测试,测试结果满足设计要求。     

Majorana fermions induced fast- and slow-light in a hybrid semiconducting nanowire/superconductor device

We investigate theoretically Rabi-like splitting and Fano resonance in absorption spectra of quantum dots(QDs)based on a hybrid QD-semiconducting nanowire/superconductor(SNW/SC)device mediated by Majorana fermions(MFs).Under the condition of pump on-resonance and off-resonance,the absorption spectrum experiences the conversion from Fano resonance to Rabi-like splitting in different parametric regimes.In addition,the Fano resonances are accompanied by the rapid normal phase dispersion,which will indicate the coherent optical propagation.The results indicate that the group velocity index is tunable with controlling the interaction between the QD and MFs,which can reach the conversion between the fast-and slow-light.Fano resonance will be another method to detect MFs and our research may indicate prospective applications in quantum information processing based on the hybrid QD-SNW/SC devices.     

High-efficiency unidirectional wavefront manipulation for broadband airborne sound with a planar device

In the past decade, one-way manipulation of sound has attracted rapidly growing attention with application potentials in a plethora of scenarios ranging from ultrasound imaging to noise control. Here we propose a design of a planar device capable of unidirectionally harnessing the transmitted wavefront for broadband airborne sound. Our mechanism is to use the broken spatial symmetry to give rise to different critical angles for plane waves incident along opposite directions. Along the positive direction, the incoming sound is allowed to pass with high efficiency and be arbitrarily molded into the desired shape while any reversed wave undergoes a total reflection. We analytically derive the working bandwidth and incident angle range, and present a practical implementation of our strategy. The performance of our proposed device is demonstrated both theoretically and numerically via distinct examples of production of broadband anomalous refraction, acoustic focusing and non-diffractive beams for forward transmitted wave while virtually blocking the reversed waves. Bearing advantages of simple design, planar profile, broad bandwidth and high efficiency, our design opens the possibility for novel one-way acoustic device and may have important impact on diverse applications in need of special control of airborne sound.     

Interface engineering of transition metal dichalcogenide/GaN heterostructures: Modified broadband for photoelectronic performance

The GaN-based heterostructures are widely used in optoelectronic devices, but the complex surface reconstructions and lattice mismatch greatly limit the applications. The stacking of two-dimensional transition metal dichalcogenide (TMD = MoS₂, MoSSe and MoSe₂) monolayers on reconstructed GaN surface not only effectively overcomes the larger mismatch, but also brings about novel electronic and optical properties. By adopting the reconstructed GaN (0001) surface with adatoms (N-ter GaN and Ga-ter GaN), the influences of complicated surface conditions on the electronic properties of heterostructures have been investigated. The passivated N-ter and Ga-ter GaN surfaces push the mid-gap states to the valence bands, giving rise to small bandgaps in heterostructures. The charge transfer between Ga-ter GaN surface and TMD monolayers occurs much easier than that across the TMD/N-ter GaN interfaces, which induces stronger interfacial interaction and larger valence band offset (VBO). The band alignment can be switched between type-I and type-II by assembling different TMD monolayers, that is, MoS₂/N-ter GaN and MoS₂/Ga-ter GaN are type-II, and the others are type-I. The absorption of visible light is enhanced in all considered TMD/reconstructed GaN heterostructures. Additionally, MoSe₂/Ga-ter GaN and MoSSe/N-ter GaN have larger conductor band offset (CBO) of 1.32 eV and 1.29 eV, respectively, extending the range from deep ultraviolet to infrared regime. Our results revel that the TMD/reconstructed GaN heterostructures may be used for high-performance broadband photoelectronic devices.     

Conformational change-modulated spin transport at single-molecule level in carbon systems

Controlling the spin transport at the single-molecule level, especially without the use of ferromagnetic contacts, becomes a focus of research in spintronics. Inspired by the progress on atomic-level molecular synthesis, through first-principles calculations, we investigate the spin-dependent electronic transport of graphene nanoflakes with side-bonded functional groups, contacted by atomic carbon chain electrodes. It is found that, by rotating the functional group, the spin polarization of the transmission at the Fermi level could be switched between completely polarized and unpolarized states. Moreover, the transition between spin-up and spin-down polarized states can also be achieved, operating as a dual-spin filter. Further analysis shows that, it is the spin-dependent shift of density of states, caused by the rotation, that triggers the shift of transmission peaks, and then results in the variation of spin polarization. Such a feature is found to be robust to the length of the nanoflake and the electrode material, showing great application potential. Those findings may throw light on the development of spintronic devices.     

Design of broadband achromatic metasurface device based on phase-change material Ge2Sb2Te5

Based on the phase-change material Ge₂Sb₂Te₅ (GST), achromatic metasurface optical device in the longer-infrared wavelength is designed. With the combination of the linear phase gradient GST nanopillar and the adjustment of the crystalline fraction m value of GST, the polarization insensitive achromic metalenses and beam deflector metasurface within the longer-infrared wavelength 9.5 μm to 13 μm are realized. The design results show that the achromatic metalenses can be focused on the same focal plane within the working waveband. The simulation calculation results show that the full-width at half-maximum (FWHM) of the focusing spot reaches the diffraction limit at each wavelength. In addition, the same method is also used to design a broadband achromatic beam deflector metasurface with the same deflection angle of 19°. The method proposed in this article not only provides new ideas for the design of achromatic metasurfaces, but also provides new possibilities for the integration of optical imaging, optical coding and other related optical systems.     

一种光电混合集成有源光双稳器件

本文报道一种光电混合集成的有源双稳态器件,它仅由一只半导体激光器,两只PIN光电探测器及几只电子元器件构成.实验上得到了光学迟滞回线,显示了光开关、光存储、光脉冲整形等功能.文中简述了器件工作原理,光电混合集成制作工艺技术及性能指标.     

ZnSe-ZnS多层量子阱光学双稳态器件

本文报道了以YAG三倍频激光为光源时,在用MBE生长的ZnSe-ZnS多量子阱材料制成的F—P标准具光双稳器件上观察到的脉冲压缩效应。根据入射脉冲波形和透射脉冲波形得到了该器件的双稳回线。