Metastable states,the adiabatic theorem and parity violating geometric phases II

We discuss and calculate parity conserving (PC) and parity violating (PV) geometric phases for the metastable 2S states of hydrogen and deuterium. The atoms are supposed to be subjected to slowly varying electric and magnetic fields which act as external parameters for the atoms. Geometric flux density fields are introduced which allow for an easy overview how to choose the paths in parameter space in order to obtain only PC or only PV geometric phases. The PV phases are calculated in the Standard Model of particle physics. Even if numerically they come out small they have interest of principle as a new manifestation of parity violation in atomic physics. Electronic supplementary material Supplementary Online Material     

Geometric phase in entangled bipartite systems

The geometric phase (GP) for bipartite systems in transverse external magnetic fields is investigated in this paper. Two different situations have been studied. We first consider two non-interacting particles. The results show that because of entanglement, the geometric phase is very different from that of the non-entangled case. When the initial state is a Werner state, the geometric phase is, in general, zero and moreover the singularity of the geometric phase may appear with a proper evolution time. We next study the geometric phase when intra-couplings appear and choose Werner states as the initial states to entail this discussion. The results show that unlike our first case, the absolute value of the GP is not zero, and attains its maximum when the rescaled coupling constant J is less than 1. The effect of inhomogeneity of the magnetic field is also discussed.     

Berry phase in Tavis-Cummings model

In this paper we investigate the Berry phase in Tavis-Cummings model in the rotating wave approximation. The dipole-dipole interaction between the atoms is considered. The eigenfunctions of the system are obtained and thus the Berry phase is evaluated explicitly in terms of the introduction of the phase shift. It is shown that the Berry phase can be easily controlled by the atom-cavity coupling strength, the cavity frequency detuning, which can be important in applications in geometric quantum computing.     

Semiclassical diagonalization of quantum Hamiltonian and equations of motion with Berry phase corrections

It has been recently found that the equations of motion of several semiclassical systems must take into account terms arising from Berry phases contributions. Those terms are responsible for the spin Hall effect in semiconductor as well as the Magnus effect of light propagating in inhomogeneous media. Intensive ongoing research on this subject seems to indicate that a broad class of quantum systems may be affected by Berry phase terms. It is therefore important to find a general procedure allowing for the determination of semiclassical Hamiltonian with Berry Phase corrections. This article presents a general diagonalization method at order ħ for a large class of quantum Hamiltonians directly inducing Berry phase corrections. As a consequence, Berry phase terms on both coordinates and momentum operators naturally arise during the diagonalization procedure. This leads to new equations of motion for a wide class of semiclassical system. As physical applications we consider here a Dirac particle in an electromagnetic or static gravitational field, and the propagation of a Bloch electrons in an external electromagnetic field.     

Photoconductive properties of some chemically deposited (Cd-Pb)S films

Films of (Cd-Pb)S have been prepared using chemical deposition in aqueous alkaline bath and their subsequent condensation on substrates. Important achievements in terms of electrical response, optical absorption and photoconductivity (PC) excitation spectra, SEM, XRD and photoluminescence (PL) studies are presented and discussed. From the photocurrent curves, the ratio I _PC (saturated photocurrent)/I _DC (dark current) was observed to be of the order of 10⁶ for the systems prepared with CdCl₂, and to be 10⁷ when doped with samarium nitrate. Values of trap depth E, lifetime and mobility are evaluated from the PC decay. Band gaps are determined from the two spectra. Diffraction lines in XRD studies are associated with CdS and PbS, and according to SEM studies, layered growth of the films takes place. PL of samarium-doped (Cd-Pb)S films shows an emission peak in the green-yellow region under 365-nm excitation. The PL brightness decreases with temperature.     

Pairwise entanglement and geometric phase in high dimensional free-Fermion lattice systems

The pairwise entanglement, measured by concurrence and geometric phase in high dimensional free-Fermion lattice systems have been studied in this paper. When the system stays at the ground state, their derivatives with the external parameter show the singularity closed to the phase transition points, and can be used to detect the phase transition in this model. Furthermore our studies show for the free-Fermion model that both concurrence and geometric phase show the intimate connection with the correlation functions. The possible connection between concurrence and geometric phase has been also discussed.     

Structure, electrical, optical and thermal properties of Ge4Sb4Tex (x = 8, 9 and 10) thin films

The crystalline samples of Ge₄Sb₄Te₁₀, Ge₄Sb₄Te₉, and Ge₄Sb₄Te₈ were prepared and their amorphous semiconducting thin films obtained by flash evaporation. Their sheet resistance decreased slowly with temperature up to 147–160 °C with activation energy of electrical conductivity ΔE = 0.40–0.44 eV. Above these temperatures, the sheet resistance drops abruptly by several orders due to crystallization. The drop of resistivity proceeds in two steps. Two steps of phase change were also found on curves of DSC and on the temperature dependence of index of refraction. It pays for slow heating rates, crystallization induced by short (≈30 ns) laser pulses proceeds probably in one step only for all studied samples (as it follows from X-ray diffraction), not only for Ge₂Sb₂Te₅ in which a single phase formation was confirmed. The crystallization temperatures are increasing slightly with decreasing Te content in the series Ge₄Sb₄Te₁₀–Ge₄Sb₄Te₉–Ge₄Sb₄Te₈ from 147 to 160 °C. The X-ray diffractograms revealed that in laser crystallized samples can be found only cubic modification of Ge₂Sb₂Te₅ type (a = 0.6 nm), while the samples annealed (230 °C, 2 h) or annealed after the crystallization with laser pulse, contain also small amounts of hexagonal phase.     

Spin-orbit berry phase in a quantum loop

We have found a manifestation of spin-orbit Berry phase in the conductance of a mesoscopic loop with Rashba spin-orbit coupling placed in an external magnetic field perpendicular to the loop plane. In detail, the transmission probabilities for a straight quantum wire and for a quantum loop made of the same wire have been calculated and compared with each other. The difference between them has been investigated and identified with a manifestation of spin-orbit Berry phase. The non-adiabaticity effects at small radii of the loop have been found as well.     

High-Pressure Behaviour of Si AND Ge: A Theoretical Study

In this work we summarize the results of first-principles theoretical studies of the sequence of pressure-driven phase-transitions followed by the group-IVa elements Si and Ge. The agreement with the available experimental data is very good.