Non-adiabatic transitions at a continuum edge

We consider interaction of a single level with a broad, tending to semi-infinite continuum. In an example of two exactly solvable problems, we show that for time dependent quantum systems the probability of the irreversible transition from a discrete level to a continuum is strongly inhibited or even completely suppressed by the presence of a discrete adiabatic level near the continuum edge. Received 10 October 2002 Published online 4 March 2003 RID="a" ID="a"e-mail: Alain.Sarfati@lac.u-psud.fr     

Scanning tunneling lithography of silicon nanoparticle films

Monolayer and bi-layer silicon nanoparticle (SiNP) films with wide band gaps (up to 4 eV) have been produced in UHV with narrow size distributions of particles with 2-4 nm diameters and were studied using scanning tunneling microscopy (STM) and spectroscopy (STS). The films then were manipulated by applying different values for the tunneling resistance. Nanoparticle fusion and fission processes allow to shape the particles in the films in various ways and to write in white and black on the film template.     

密度泛函理论研究簇合物(HFGaN3)n (n=1-6)：尺寸效应

用密度泛函理论DFT方法,计算研究不对称簇合物(HFGaN3)n (n=1-6)的几何构型、稳定性、IR谱和热力学性质。结果表明,簇合物(HFGaN3)n (n=2-6)的优化构型拥有一个Ga和α−N原子交替的2n元环状结构。通过计算研究(HFGaN3)n (n=1-6)的平均结合能、二阶能量差分和能隙与团簇尺寸关系,发现后两者表现出明显的“奇－偶”振荡现象。对计算获得的IR谱进行归属,获得四个特征区。讨论了团簇尺寸和温度对(HFGaN3)n (n=1-6)热力学函数的影响。由焓变和吉布斯自由能可知,200-800 K温度范围内由单体形成稳定的多聚体(HFGaN3)n (n=2-6)在热力学上有利。     

水分子在Yn (n=2-8)团簇表面的分子吸附与解离吸附

运用密度泛函理论,对H2O在Yn (n=2-8) 团簇表面的分子吸附与解离吸附两种模式进行了结构优化,电子性质分析。结果表明：分子吸附中H2O倾向于O端吸附于Y-Y原子桥位,而解离吸附中H2O解离的H, O原子倾向于吸附于Yn团簇的面位。两种吸附模式都导致了（解离吸附n=4, 5除外）主团簇Y原子平均键长增大。分子吸附和解离吸附的吸附强度和化学活性都随尺寸增加而增大。解离吸附中体系的稳定性明显高于分子吸附,且与体系的电子壳层效应密切相关。     

Site segregation in size-mismatched nanoalloys: Application to Cu-Ag

In order to determine the energetic driving forces for surface segregation in bimetallic clusters, we use a combined approach coupling numerical simulations within an N-body interatomic potential and a lattice-gas model. This approach, which has been used successfully to study both the superficial segregation in semi-infinite alloys and the intergranular segregation, allows us to determine the relative contributions of the three elementary driving forces for the different sites of the cluster surface (vertices, edges and facets) in both dilute limits for the Cu-Ag system. We show that the segregation hierarchy based on broken-bond arguments (preferential segregation to the vertex sites, less to edge sites, and least to facet sites) is not at all universal. In particular, unusual hierarchies are predicted when the sizes of the constituents are strongly different. Furthermore, we compare the segregation driving forces for cubo-octahedral and icosahedral clusters. They are similar for the vertex sites and edge sites, whereas they differ significantly for the sites of the triangular facets. The segregation of the species with the largest atomic radius (Ag) is indeed largely enhanced in the icosahedral structure due to dilations of the orthoradial distances.     

A density functional theoretic study of novel silicon-carbon fullerene-like nanostructures: Si40C20, Si60C20, Si36C24, and Si60C24

Fullerene-like silicon nanostructures with twenty and twenty-four carbon atoms on the surface of the Si₆₀ cage by substitution, as well as inside the cage at various orientations have been studied within the generalized gradient approximation to density functional theory. Full geometry optimizations have been performed without any symmetry constraints using the Gaussian 03 suite of programs and the LANL2DZ basis set. Thus, for the silicon atom, the Hay-Wadt pseudopotential with the associated basis set is used for the core electrons and the valence electrons, respectively. For the carbon atom, the Dunning/Huzinaga double zeta basis set is employed. Electronic and geometric properties of these nanostructures are presented and discussed in detail. Optimized silicon-carbon fullerene like nanostructures are found to have increased stability compared to the bare Si₆₀ cage and the stability depends on the number and the orientation of carbon atoms, as well as on the nature of silicon-carbon and carbon-carbon bonding.     

嵌入La和Gd原子的Si24笼团簇的稳定性

用梯度修正自旋极化密度泛函(DFT)电子结构计算,研究了具有T_h和D_2d对称性包裹La和Gd原子的Si₂₄富勒烯的稳定性.结果表明Gd@Si₂₄具有很高的磁性而La@Si₂₄的磁性完全猝灭.这些结果有可能导致Si基富勒烯团簇新的结构类型. 关键词： 24和Gd@Si₂₄包裹团簇')" href="#">La@Si₂₄和Gd@Si₂₄包裹团簇 自旋极化密度泛函 稳定性 电磁性质     

Wn(n=3—27)原子团簇结构的第一性原理计算

使用密度泛函理论下的第一性原理方法，对W_n原子团簇(n=3—27)的结构特性进行了理论计算. 得到了W_n团簇(n=3—7)的最低能量结构和(n=8—27)的局域能量极小的典型结构. 使用凝胶模型，提出的电子组态1s²1p⁶1d¹⁰2s²1f¹⁴2p⁶3s     

中小尺寸CdS和CdTe团簇结构与电子性质的第一性原理研究

基于密度泛函理论(DFT)的第一性原理方法(DMOL3程序),在广义梯度近似(GGA)下,计算了中小尺寸II~VI族(CdS)n和(CdTe)n团簇的基态结构、最高占据轨道(HOMO)和最低未占据轨道(LUMO)的能隙、结合能等,比较了(CdS)n和(CdTe)n两种团簇的基态结构,能隙与结合能随尺寸变化关系的差异等.     

Structural and electronic properties of neutral clusters Ga12X (X=C, Si, Ge, Sn, and Pb) and their anions from first principles

The structural and electronic properties of neutral and negatively charged Ga₁₂X (X=C, Si, Ge, Sn, and Pb) clusters are calculated by the first-principles method. The results show that the most stable symmetry depends on the doped atom rather than the geometry structure. However, the geometry symmetry plays an important role in calculating the energy gap. In addition, in the anionic clusters, the added electron would reduce the energy gap by about 0.4 eV. As for the density of states (DOS), clusters with the same symmetry show a similar trend of DOS. The major impact on DOS by adding an electron is the occurrence of relative energy shift.