Nonlinearity in inverse and transverse piezoelectric properties of Pb(Zr0.52Ti0.48)O3 film actuators under AC and DC applied voltages

The motion of domain walls is a crucial factor in piezoelectric properties and is usually related to the irreversible and hysteretic behaviors. Herein, we report on the investigation of inverse and transverse piezoelectric coefficients of capacitor-based and microcantilever-based Pb(Zr_0.52Ti_0.48)O₃ films with a change in the DC bias and the AC applied voltage. A large inverse piezoelectric strain coefficient of about 350 p.m./V, and a low strain hysteresis of about 7.1%, are achieved in the film capacitors under a low applied voltage of 2 V (20 kV/cm) which can benefit the actuators for motion control in high-precision systems. The field-dependences of the transverse piezoelectric coefficients, obtained from four-point bending and microcantilever displacement, are in good agreement with each other. The results also reveal that the irreversible domain-wall motion is attributed to the nonlinearity in the field-dependent piezoelectric strain and cantilever displacement.     

脉冲激光沉积法制备的ZnO薄膜的低阈值电抽运紫外随机激射

分别采用直流反应溅射法和脉冲激光沉积法在硅衬底上沉积ZnO薄膜, 用X射线衍射、扫描电镜、光致发光谱等手段对两种方法沉积的ZnO薄膜的结晶状态、 表面形貌和光致发光等进行了表征. 进一步对比研究了以上述两种方法制备的ZnO薄膜作为发光层的金属-绝缘体-半导体结构器件的电抽运紫外随机激射. 结果表明, 与以溅射法制备的ZnO薄膜作为发光层的器件相比, 以脉冲激光沉积法制备的ZnO薄膜为发光层的器件具有更低的紫外光随机激射阈值电流和更高的输出光功率. 这是由于脉冲激光沉积法制备的ZnO薄膜中的缺陷更少, 从而显著地减少了紫外光在光散射过程中的光损耗. 关键词： 随机激射 ZnO薄膜 脉冲激光沉积 溅射     

High performance Zn–Sn–O thin film transistors with Cu source/drain electrode

Zn–Sn–O (ZTO) thin film transistors (TFTs) were fabricated with a Cu source/drain electrode. Although a reasonably high mobility (μ_FE) of 13.2 cm²/Vs was obtained for the ZTO TFTs, the subthreshold gate swing (SS) and threshold voltage (V_th) of 1.1 V/decade and 9.1 V, respectively, were inferior. However, ZTO TFTs with Ta film inserted as a diffusion barrier, exhibited improved SS and V_th values of 0.48 V/decade and 3.0 V, respectively as well as a high μ_FE value of 18.7 cm²/Vs. The improvement in the Ta‐inserted device was attributed to the suppression of Cu lateral diffusion into the ZTO channel region. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Tribological Behavior of Multiply-Alkylated Cyclopentanes (MACs)-Cu Nanoparticles Composite Thin Film

Multiply-alkylated cyclopentanes (MACs) composite thin films containing Cu nanoparticles are fabricated on the octadecyltrichlorosilane (OTS)-modified substrate by a spin-coating technique. The thickness, wetting behavior, and nanoscale morphologies of the films are characterized by means of ellipsometry, contact angle measurement, and atomic force microscope (AFM). The friction and wear behaviors of the thin films sliding against Si₃N₄ ball are examined on a UMT-2MT tribometer in a ball-on-disk contact mode. The worn surfaces of the OTS-MAC-Cu composite film and the counterpart Si₃N₄ balls are investigated with a scanning electron microscope. Water contact angle on OTS-MAC-Cu composite film is higher than that of OTS-MAC film. OTS-MAC-Cu composite film exhibits higher load-carrying capacity and better friction reduction and antiwear behavior as compared with OTS-MAC film. This may be attributed to the load-carrying and self-repairing property of the Cu nanoparticles in the composite film and the formation of a transfer layer composed of OTS, MAC, and Cu on the rubbing surface of the counterpart ball.     

Preparation and Mechanical and Tribological Properties of High-Density Polyethylene/Hydroxyapatite Nanocomposites

High-density polyethylene (HDPE) nanocomposites reinforced with hydroxyapatite nanorods (nHA) were fabricated by means of extrusion and injection molding. The thermal, mechanical, and dry sliding wear properties of HDPE-based nanocomposites filled with nHA loadings up to 20 wt% were investigated. The results of mechanical property characterization showed that nHA additions improved the hardness, elastic modulus, and yield strength of HDPE at the expense of its tensile ductility and impact strength. Thermogravimetric analysis and heat deflection temperature measurements revealed that nHA fillers are very effective to enhance the thermal stability of HDPE. The wear behavior of HDPE/nHA nanocomposites was studied using a pin-on-disk tribometer. nHA fillers of a large aspect ratio improved the wear resistance of HDPE substantially because of their load-bearing effect and the formation of a continuous transfer film on the steel counterface.     

Effect of deposition power and pressure on rate deposition and resistivity of titanium thin films grown by DC magnetron sputtering

ABSTRACT

Based on magnetron sputtering deposition technology, titanium (Ti) thin films are deposited on silicon (Si) substrate using different preparation conditions such as sputtering power and pressure. The influence of altering these conditions on deposition rate and microstructure is studied. The results show that sputtering power significantly affects the rate of deposition and the resistivity. The deposition rate of the Ti thin film increases when the resistivity decreases under sputtering powers of 150–225?W with a pressure of 0.8?Pa and Argon (Ar) flux of 80 sccm. As sputtering power was increased further (from 225 to 250?W), the deposition rate reduced and the resistivity augmented. Pressure also has influence on the deposition rate and resistivity – when pressure increases from 0.6 to 0.8?Pa, the deposition rate escalates while the resistivity reduces; when the pressure is raised from 0.8 to 1.0?Pa with Ar flux of 100 sccm, the deposition rate decreases and resistivity increases. The surface chemical compositions and the structures of the Ti film were studied by using X-ray photoelectron spectroscopy (XPS) and X-ray diffractometer (XRD). Observing the cross-section of the thin-film samples produced by scanning electron microscope (SEM) reveals the influence of the preparation conditions used on the microstructure and confirms the influence of sputtering power and pressure on the resistivity.     

Ftir Studies on LB Film of Amphiphile with Schiff Base as Headgroup and Its Copper Complex

Two different ways to form monolayers and LB films (surface film and subphase film) of the complex have been used, where a novel amphiphile containing Schiff base as a headgroup was used as a ligand. the monolayer behavior at the air/water interface was characterized by π-A isotherms and two-dimensional molecular orientation of alkyl chains in LB films and thermal stability were measured by polarized and variable temperature FTIR transmission spectra, indicating that the LB film of the novel amphiphile and its copper(II) complex are very stable as well as stearic acid. Because incorporating the metal ion into the monolayer makes it more condensed, thermal stability of the LB film was enhanced. as can be compared from their structure and properties, subphase films are superior to surface films.     

A numerical study of rotation effects on jets effusing from inclined holes into a cross-flow

In this work, the complexity of the flow field arising from the impact of the interaction of coolant jets with a hot cross-flow under rotation conditions was numerically simulated using large eddy simulation with artificial inflow boundary condition. The finite-volume method and the unsteady PISO (Pressure Implicit with Splitting of Operators) algorithm were applied on a non-uniform staggered grid. The simulations were performed for four different values of rotation number (Ro) of 0.0, 0.03021, 0.06042, and 0.12084, a jet Reynolds number of 4700, based on the hole width and the jet exit velocity. The air jet was injected at 30° and 90° in the streamwise direction with a density ratio of 1.04 and a velocity ratio of 0.5. The flow fields of the present study were compared with experimental data in order to validate the reliability of the LES technique. It was shown that the rotation has a strong impact on the jet trajectory behaviour and the film cooling effectiveness. The film trajectory always inclines centrifugally. Under rotating conditions, the film trajectory departs from the centreline to the left boundary. The deflection becomes greater as Ro increases. Furthermore, it was also found that the injection angle has a strong impact on separation and reattachment behaviour as well as the strength of the penetration into the cross-flow. As it increases, the distribution of the film cooling downstream the jet exit is more non-uniform and the film cooling effectiveness level slightly decreases.     

Polycrystalline silicon films prepared by metal-induced crystallisation using pre- and post-deposited aluminium on amorphous silicon

We report on the successful fabrication of polycrystalline silicon films by aluminium-induced crystallisation (AIC) of Radio frequency (rf) plasma-enhanced chemical vapour deposited (PECVD) a-Si films. The effects of annealing at different temperatures (300 and 400°C), below the eutectic temperature of the Si–Al binary system, on the crystallisation process have been studied. This work emphasises the important role of the position of the Al layer with respect to the Si layer on the crystallisation process. The properties of the crystallised films were characterised using X-ray diffraction, Raman spectroscopy, ellipsometry, field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). With an increase in the annealing temperature, it was found that the degree of crystallisation of annealed a-Si/Al and Al/a-Si films increased. The results showed that the arrangement where the Al was on top of the a-Si had a more prominent effect on crystallisation enhancement than when Al was below the a-Si. The interfacial layer between the Al and a-Si film is crucial because it influences the layer-exchange process during annealing. The oxide layer formed between the Al and the a-Si layers greatly retards the crystallisation process in the case of the Al/Si arrangement. Our investigations suggest that polycrystalline Si films formed by AIC can be used as a seed layer in solar cell fabrication.     

Edge misfit dislocation formation at the interface of a nanopore and infinite substrate with surface/interface effects

The model of an edge misfit dislocation at the interface of the hollow nanopore and the infinite substrate with surface/interface stress is investigated. Using the complex variable method, analytical solutions for complex potentials of a film due to an edge misfit dislocation located in the film with surface/interface effect are derived, and the stress fields of the film and the edge misfit dislocation formation energy can be obtained. The critical conditions for edge misfit dislocation formation are given at which the generation of an edge misfit dislocation is energetically favourable. The influence of the ratio of the shear modulus between the film and the infinite substrate, the misfit strain, the radius of the nanopore and the surface/interface stress on the critical thickness of the film is discussed.