Tarski's theorem on intuitionistic logic,for polyhedra

In 1938, Tarski proved that a formula is not intuitionistically valid if, and only if, it has a counter-model in the Heyting algebra of open sets of some topological space. In fact, Tarski showed that any Euclidean space ${\mathbb{R}}^n$ with $n?1$ suffices, as does e.g. the Cantor space. In particular, intuitionistic logic cannot detect topological dimension in the Heyting algebra of all open sets of a Euclidean space. By contrast, we consider the lattice of open subpolyhedra of a given compact polyhedron $P?{\mathbb{R}}^n$, prove that it is a locally finite Heyting subalgebra of the (non-locally-finite) algebra of all open sets of P, and show that intuitionistic logic is able to capture the topological dimension of P through the bounded-depth axiom schemata. Further, we show that intuitionistic logic is precisely the logic of formulæ valid in all Heyting algebras arising from polyhedra in this manner. Thus, our main theorem reconciles through polyhedral geometry two classical results: topological completeness in the style of Tarski, and Ja?kowski's theorem that intuitionistic logic enjoys the finite model property. Several questions of interest remain open. E.g., what is the intermediate logic of all closed triangulable manifolds?     

Oxygen-crosslinked polysilane: the new class of Si-related material for electroluminescent devices

The preparation and optical properties of the novel silicon-related material named oxygen-crosslinked polysilane were investigated. The oxygen-crosslinked polysilane was prepared by the thermal annealing of the precursor polysilane bearing alkoxyl groups. The photoluminescence consisting of a broad visible band at about 440 nm and a relatively sharp band at about 360 nm was observed at room temperature. The relative intensities of the visible emission were changed during the crosslinking. The visible emission was greatly affected by the steric hindrance of the alkoxyl groups of the precursor. The visible electroluminescene (EL) was also observed uniformly from the EL cell consisting of the oxygen-crosslinked polysilane film sandwiched between A1 electrode and indium-tin-oxide (ITO) electrode. The current densities of the EL cell increased with an increase in the oxygen-crosslinking. © 1997 John Wiley & Sons, Ltd.     

溶胶-凝胶法制备ZnO薄膜及其光致发光性质

利用溶胶-凝胶法在石英衬底上制备了ZnO薄膜,通过测量样品的透射谱、X射线衍射谱、扫描电子显微镜(SEM)图像和光致发光谱研究了其结构特征和发光性质.结果表明:在衍射角2θ=34.32°处出现了对应(002)晶面的强衍射峰,ZnO膜呈多晶状态,具有六角纤矿晶体结构和良好的C轴择优取向,薄膜中颗粒的平均粒径为56nm;光致发光呈多发光峰状,有中心波长为378nm的紫带,520nm绿带,446nm附近的蓝带以及发现未见报道过的绿带以后中心波长为586nm和570nm两个弱发射峰.实验结果表明,制备的ZnO薄膜具有发光特性,但内部与深能级发射相关的结构缺陷浓度还是较高,样品中两个低能量光致发光应来源于晶粒间界的缺陷能级,多缺陷能级导致了多发射峰的光致发光谱.     

LB膜中混合聚集体的光致荧光特性研究

研究了不同活性分子（半花菁和氐盐）混合聚集体的形成以及紫外光照射对ＬＢ交替多层膜光致荧光（ＰＬ）特性的影响。在半花菁和氐盐混合的ＬＢ膜中,由于不同分子间较强的相互作用使混合膜的荧光光谱较纯半花菁和氐盐分子膜分别发生了蓝移和红移。利用紫外光照射可以使分子的聚集体部分分解甚至破坏分子的结构,导致光致荧光强度明显减弱。     

非共振激发条件下微腔中激子自发辐射的时间分辨光谱

低温下,测量了InGaAs量子阱平面微腔的时间分辨光谱。在非共振激发条件下,观察到上下两支腔极化激元光荧光的衰退时间与失谐无关;下支腔极化激元光荧光的上升时间也与失谐无关;而上支腔极化激元光荧光的上升时间却与失谐有强烈的依赖关系,随着从负失谐到正失谐的增加,上升时间逐渐减小。对实验结果的物理根源进行了讨论。     

Effect of bismuth on liquid-phase epitaxy (LPE) grown GaAs layer using Ga–As–Bi melt

GaAs epitaxial layers of high structural quality have been realised from Ga–As–Bi melt using liquid-phase epitaxy (LPE). LPE grown GaAs epitaxial layer using bismuth solvent on GaAs substrate has been found to be of good structural perfection as compared to layers using gallium solvent. The temperature-dependent PL spectra of GaAs layer, grown from Ga+Bi mixed solvent has shown that the use of bismuth does not change the band energy. ECV depth profile of heavily zinc-doped epitaxial layer shows uniform doping in the GaAs layer grown using gallium solvent as compared to the layer grown using bismuth solvent.     

多孔硅锗的制备及其近红外发光增强

用激光照射辅助电化学刻蚀硅锗合金样品能够形成多种低维纳米结构。在硅锗合金上形成的多孔状结构在波长为725 nm处有很强的光致发光(PL)峰,PL的增强效应不能单独用量子受限模型来解释。我们提出新的模型来解释这种低维纳米结构的PL增强效应。     

掺杂Ce的TiO_2纳米粒子的光致光及其光催化活性

采用sol-gel法制备了纯的和掺杂不同量Ce的TiO_2纳米粒子，并利用XRD， TEM，BET，XPS和PL光谱对样品进行表征，主要考察焙烧温度和含量对掺杂Ce的 TiO_2纳米粒子性质以及光催化降解苯酚活性的影响，并探讨了Ce的掺杂对TiO_2相 变的作用机制以及PL光谱与光催化活性的关系，结果表明，掺杂的Ce~(4+)没有进 入到TiO_2晶格中，而是以小团簇的CeO_2化学态均匀地弥散在TiO_2纳米粒子中， 这可能导致了Ce的掺杂对TiO_2的相变有很大的抑制作用；Ce的掺杂没有引起新的 光致发光现象，而适量Ce的掺杂能够降低TiO_2纳米粒子PL光谱的强度，这是因为 掺杂的Ce~(4+)易于捕获光生电子而生成Ce~(3+);600℃处理的掺杂Ce的TiO_2纳米 粒子表现出较高的光催化活性，这说明600℃是比较合适的焙烧温度，而掺杂不同 量的Ce的TiO_2样品的光催化活性顺序是：3 mol%＞4 mol%＞2 mol%＞5 mol%＞1 mol%＞0 mol%，这与它们的PL光谱强度的顺序是相反的，即PL光谱强度越低，其 光催化活性越高，这说明PL光谱与其光催化活性间有着必然的联系，这是因为掺杂 剂Ce~(4+)能够捕获光生电子，在光致发光过程中使PL光谱强度下降，而在光催化 反应过程中使有机污染物加快氧化。     

Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering

Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the sam- ples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300-400℃, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photolumines- cence spectra, and the origin of blue emission was investigated.     

退火对He注入及随后208Pb27+辐照的Al2O3单晶PL谱的影响

利用高能离子研究了110 keV 的He⁺注入Al₂O₃单晶及随后230 MeV的²⁰⁸Pb²⁷⁺辐照并在不同温度条件下退火样品的光致发光的特性. 从测试结果可以清楚地看到在375 nm，390 nm，413 nm 和450 nm 出现了强烈的发光峰. 经过600 K退火2 h后测试结果显示，390 nm发光峰增强剧烈，而别的发光峰显示不明显. 在900 K退火条件下，390 nm的发光峰开始减弱相反在510 nm出现了较强的发光峰，到1100 K退火完毕后390 nm的发光峰完全消失，而510 nm的发光峰相对增强. 从辐照样品的FTIR谱中看到，波数在460—510 cm^-1间的吸收是振动模式，经过离子辐照后，吸收带展宽，随着辐照量的增大，Al₂O₃振动吸收峰消失，说明Al₂O₃振动模式被完全破坏. 1000—1300 cm^-1之间为Al-O-Al桥氧的伸缩振动模式，辐照后吸收带向高波数方向移动. 退火后的FTIR谱变化不大.