生长温度对ZnO薄膜晶体质量和发光特性的影响

采用激光脉冲沉积法在Si(100)衬底上生长ZnO薄膜,衬底温度分别为室温,200℃,300℃,400℃和500℃.用X射线衍射仪、拉曼光谱、扫描电子显微镜对薄膜的微结构进行了测量,并测量了室温下薄膜的光致发光特性.结果表明,300℃时.ZnO具有最佳择优取向,随着衬底温度升高.衍射峰半峰全宽减小,薄膜晶粒尺寸增大,400℃时,薄膜具有各向等大的品粒尺寸.同时拉曼谱结果显示,薄膜内部的缺陷随衬底温度变化无明显差别,应力表现为张应力,400℃时应力最小,紫外发光峰在衬底温度为400℃时最强,而黄绿光带最弱.在减少薄膜缺陷,提高择优长向和晶粒尺寸的同时.使晶粒横向尺寸和纵向尺寸尽可能相同,可极大提高薄膜的发光特性.     

Investigation of defect centres responsible for TL/OSL in MgAl2O4:Tb

Magnesium aluminate doped with Tb³⁺ (MgAl₂O₄:Tb³⁺) was prepared by combustion synthesis. Three thermoluminsence (TL) peaks at 120, 220 and 340 °C were observed. PL and TL emission spectrum shows that Tb³⁺ acts as the luminescent centre. Optically stimulated luminescence (OSL) was observed when stimulated by 470 nm blue light.Electron spin resonance (ESR) studies were carried out to identify the defect centres responsible for the TL and OSL processes in MgAl₂O₄:Tb³⁺. Two defect centres were identified in irradiated MgAl₂O₄:Tb³⁺ phosphor by ESR measurements which was carried out at room temperature and these were assigned to V and F⁺ centres. V centre (hole centre) is correlated to 120 and 220 °C TL peaks and F⁺ centre (electron centre), which acts as a recombination centre is correlated to 120, 220 and 340 °C.     

Dy3+ emission in M5(PO4)3F (M = Ca, Ba) phosphor

Ultrafine M₅(PO₄)₃F:Dy³⁺ (M = Ca, Ba) phosphors were prepared via combustion process using metal nitrates as precursors. The formation of crystalline phosphate was confirmed by X-ray diffraction pattern. The PL excitation spectra show the excitation peaks observed at 250 to 400 nm due to f → f transition of Dy³⁺ ion, which are useful for solid-state lighting purpose (mercury free excitation). The PL emission of Dy³⁺ ion by 348 nm excitation gave an emission at 489 nm (blue), 582 nm (yellow) and 675 nm (red). All the characteristics of BYR emissions like BGR indicate that Dy doped Ca₅(PO₄)₃F and Ba₅(PO₄)₃F phosphors are good candidates that can be applied in solid-state lighting phosphor (mercury free excited lamp phosphor) and white light LED.      

Metal-CdZnTe contact and its annealing behaviors

The electrical properties of different metal-CdZnTe contacts by sputtering deposition method are investigated by current-voltage. The results show that Au is the most suitable electrical contact materials, which forms the nearly ideal Ohmic contact with high resistivity p-CdZnTe crystals. Ohmicity coefficient b is the closest to 1 after 10 min annealing at 333 K, which is analyzed by current-voltage characteristics. XPS analyses show that Au atoms diffuse into CdZnTe during annealing process and Cd and Te atoms diffuse into Au contact. Diffused Au atoms do not form any compound with any element in CdZnTe crystal. PL spectra results of Au deposition on CdZnTe crystals at 10 K show that the inter-diffused donors [Au]³⁺ recombine with acceptors [V_Cd]²⁻ during sputtering process. Meanwhile, the intensity of (D_complex) peak of with Au contact increases sharply in comparison with un-deposited CdZnTe crystal and donor [Au]³⁺ and can compensate Cd vacancy [V_Cd]²⁻ wholly.     

不同气氛下SiOx纳米线的制备及形貌、红外、光致发光研究

以N₂/H₂、N₂或NH₃为载气,利用碳辅助化学气相沉积法,常压1140℃下在石英衬底上制备了大量直径为20—300 nm,长数百微米的非晶SiO_x纳米线.制备得到的纳米线具有高度定向生长的特性.利用透射电子显微镜、扫描电子显微镜及电子能谱对SiO_x纳米线的形貌及组分进行了分析,Si与O原子之比为1∶18.傅里叶红外吸收谱显示了非晶氧化硅的三个特征峰（482,806和1095 cm^-1）及1132 cm^-1无序氧化硅结构的强吸收峰.SiO_x纳米线光致发光光谱（PL）在440 nm（283 eV）处具有较强的荧光峰;N₂为载气生长的SiO_x纳米线的PL峰强比NH₃为载气生长的SiO_x纳米线峰强大四个数量级. 关键词： x纳米线')" href="#">SiO_x纳米线 碳辅助化学气相沉积法 傅里叶红外吸收 光致发光     

SiO2纳米线/纳米颗粒复合结构的制备及光致发光性能研究

采用热蒸发法制备了非晶SiO2纳米线/纳米颗粒复合结构,确定了非晶SiO2纳米线、微米颗粒及SiO2纳米线/纳米颗粒复合结构生长的工艺条件,并利用XRD、SEM、Raman、PL光谱等技术手段分析表征样品.实验结果表明,在不同的沉积温度范围内,生长样品的形貌和结构不同;SiO2纳米线/纳米颗粒复合结构的发光区与Si衬底明显不同,主要集中在黄绿光范围.     

基于遗传算法的安溪铁观音品质快速评价研究

为探究一种快速无损的安溪铁观音品质评价方法,利用遗传算法(GA)对茶样的近红外光谱特征波长进行筛选,结合偏最小二乘(PLS),建立全谱段的PLS定量模型与GA-PLS模型。结果表明,傅里叶变换近红外(FT-NIR)全谱段光谱在经过平滑+二阶导数+归一化处理后,PLS模型预测性能最高,建模结果为：校正集相关系数R_C=0.921,校正集均方根误差RMSEC=0.543,验证集相关系数R_P=0.913,验证集均方根误差RMSEP=0.665。选用近红外光谱6 670～4 000 cm-1谱区,采用遗传算法进行特征波长筛选,参与建模数据点数从1 557缩减到408个。优选波段后,GA-PLS建模结果为：校正集相关系数R_C=0.959,校正集均方根误差RMSEC=0.413,验证集相关系数R_P=0.940,验证集均方根误差RMSEP=0.587。可见,GA-PLS模型的校正集和验证集的预测结果均优于全谱段PLS模型。结果说明,在传统的近红外光谱技术结合化学计量学方法的建模基础上,加入遗传算法进行波长筛选,能有效提高模型预测能力,实现方法学的创新研究,且GA-PLS品质评价模型具有较强的参考和推广价值,为提高我国茶叶品质的检测技术水平提供新的方法借鉴。     

ZnO单晶的微区光致发光特性研究

ZnO单晶材料以其优良的综合性能在光电子器件方面掀起了研究热潮,因此对ZnO单晶的研究具有重要的理论和实践意义。采用激光辐照的方式,对ZnO单晶进行了光致发光(photoluminescence, PL)光谱实验,分析研究了ZnO单晶在不同温度(低温)和不同激光能量强度照射下其光致发光特性。研究结果表明,ZnO单晶内存在少量杂质及表面氧缺陷,这些结构对其发光特性有一定的影响;在低温条件下,ZnO单晶具有良好的发光特性,且随着温度的提高,发光光谱峰的位置会向长波长方向移动,但强度会减小;当激光光源的强度增大,ZnO单晶的PL发射光谱的强度也会随之增大,且峰的位置和相对强度不变。结合拉曼(Raman)光谱实验,从分子及原子振动、转动类型验证了纤锌矿ZnO单晶的六方晶系结构;配合X射线衍射(X-ray diffraction, XRD)技术,得出ZnO单晶良好的结晶特性以及晶轴取向。     

Sulphide passivation of GaN based Schottky diodes

Wet chemical passivation of n-GaN surface was carried out by dipping GaN samples in ammonium sulphide diluted in aqueous and alcoholic solvent base solutions. Photoluminescence (PL) investigations indicated that sulphide solution effectively led to the reduction of GaN surface states. Increased band edge PL peak showed that S²⁻ ions are more active in alcohol based solvents. X-ray photoelectron spectroscopy revealed reduction in surface oxides by introduction of sulphide species. Ni/n-GaN Schottky barrier diodes were fabricated on passivated surfaces. Remarkable improvement in the Schottky barrier height (0.98 eV for passivated diodes as compared to 0.75 eV for untreated diodes) has been observed.     

水热合成ZnO:Cd纳米棒的微结构及光致发光特性

采用水热法制备了ZnO和不同掺杂浓度的ZnO:Cd纳米棒,通过SEM,XRD、拉曼光谱等的分析,研究了ZnO和ZnO:Cd的微结构并测试分析了其光致发光特性.结果表明,ZnO和ZnO:Cd纳米棒呈六角纤锌矿结构,Cd掺杂使得纳米棒体积更小.由于内部张应力的影响,Cd掺杂使得材料光学带隙减少.当掺杂浓度为2%时,合成的材料光致发光谱中出现了位于2.67 eV处,由导带底和Zn空位(VZn)缺陷能级跃迁造成的蓝光发射峰,并且Cd的掺入使得位于2.90 eV附近的紫光发射峰强度增强,对于研究ZnO蓝紫发光器件具有重要的意义.