Effect of annealing on the properties of N-doped ZnO films deposited by RF magnetron sputtering

N-doped ZnO films were deposited by RF magnetron sputtering in N₂/Ar gas mixture and were post-annealed at different temperatures (T_a) ranging from 400 to 800 °C in O₂ gas at atmospheric pressure. The as-deposited and post-annealed films were characterized by their structural (XRD), compositional (SIMS, XPS), optical (UV-vis-NIR spectrometry), electrical (Hall measurements), and optoelectronic properties (PL spectra). The XRD results authenticate the improvement of crystallinity following post-annealing. The weak intensity of the (0 0 2) reflection obtained for the as-deposited N-doped ZnO films was increased with the increasing T_a to become the preferred orientation at higher T_a (800 °C). The amount of N-concentration and the chemical states of N element in ZnO films were changed with the T_a, especially above 400 °C. The average visible transmittance (400-800 nm) of the as-deposited films (26%) was increased with the increasing T_a to reach a maximum of 75% at 600 °C but then decreased. In the PL spectra, A⁰X emission at 3.321 eV was observed for T_a = 400 °C besides the main D⁰X emission. The intensity of the A⁰X emission was decreased with the increasing T_a whereas D⁰X emission became sharper and more optical emission centers were observed when T_a is increased above 400 °C.     

The origin of blue photoluminescence from nc-Si/SiO2 multilayers

Intensive blue photoluminescence (PL) was observed at room temperature from the nanocrystalline-Si/SiO$_{2}$ (nc-Si/SiO$_{2})$ multilayers (MLs) obtained by thermal annealing of SiO/SiO$_{2}$\,MLs for the first time. By controlling the size of nc-Si formed in SiO sublayer from 3.5 to 1.5 nm, the PL peak blueshifts from 457 to 411 nm. Combining the analysis of TEM, Raman and absorption measurement, this paper attributes the blue PL to multiple luminescent centres at the interface of nc-Si and SiO$_{2}$.     

退火对Pb辐照Al2O3单晶发光特性的影响

研究了230MeV的²⁰⁸Pb²⁷⁺辐照Al₂O₃样品及随后在600,900,1100K高温条件下退火后的光致发光特性。从辐照样品的测试结果可以清楚地看到在波长为390,450nm处出现了强的发光峰。辐照量为1×10¹³ions/cm²时,样品的发光峰最强。经过600K退火2h后测试结果显示,380nm发光峰剧烈增强,而其他发光峰显示不明显。在900K退火条件下,380nm的发光峰开始减弱,而在360,510nm出现了明显的发光峰,至到1100K退火完毕后380nm的发光峰完全消失,而360,510nm的发光峰相对增强。从被辐照样品的FTIR谱中看到,波数在460~510cm^-1间的吸收是振动模式,经过离子辐照后,吸收带展宽,随着辐照量的增大,Al₂O₃振动吸收峰消失,说明Al₂O₃振动模式被完全破坏。1000~1300cm^-1之间为Al—O—Al桥氧的伸缩振动模式,辐照后吸收带向高波数方向移动,说明其振动模式受到影响。辐照剂量较小的样品,损伤程度相对较低,经退火晶化后,振动模式基本恢复到单晶状态;辐照剂量较高的样品,损伤程度大,退火处理后表面变得较粗糙,振动模式并未出现,说明结构破坏严重。     

射频等离子硫钝化GaAs(100)的表面特性

采用射频等离子方法,对Ga As(100)衬底片表面进行干法硫等离子体钝化,旨在得到性能稳定含硫钝化层。样品经过360℃温度条件下的快速热退火,光致发光(PL)测试表明,钝化后的样品PL强度上升了71%。同时,钝化样品的稳定性测试结果表明,样品放置在实验室空气中30 d,其PL强度未出现明显变化,说明Ga As的等离子体干法硫钝化具有较好的性能稳定性。     

Optically stimulated luminescence in Ag doped Li2B4O7 single crystal and its sensitivity to neutron detection and dosimetry in OSL mode

Optically stimulated luminescence (OSL) measurements have been carried out on single crystals of Ag doped Li₂B₄O₇ (LTB:Ag) after exposure to various nuclear radiations. The time integrated OSL intensity is found to be linear in the range from 0.1 Gy to 500 Gy. Fading of the OSL signal was found to be around 36% in 48 h. The presence of ⁶Li and ¹⁰B has been gainfully utilized to measure doses of thermal neutrons. Further, the large difference between the wavelength of the stimulation source (∼460 nm) and emission from the LTB:Ag at 270 nm has enhanced the signal-to-noise ratio in a simple OSL set-up with suitable filters. The high sensitivity of the LTB:Ag to thermal neutrons will be useful in variety of applications including personal dosimetry in mixed-fields and imaging devices for neutron radiography.     

具有手性侧链的卟啉液晶化合物的合成和发光性能研究

通过在卟啉环上引入手性侧链的方法合成了两类(4个)卟啉液晶化合物,并用元素分析,UV-vis, FT-IR, ¹H NMR, MS, DSC,圆二色谱(CD)和偏光显微镜对化合物的结构进行了表征.研究结果表明,这些化合物具有液晶性质,固体荧光和电致发光性质,其中两个卟啉配体有较强的CD吸收性能.     

C+注入a-SiNx：H薄膜的微结构及光发射的研究

常温下对低压化学气相沉积制备的纳米硅镶嵌结构的a-SiN_x:H薄膜进行低能量高剂量的C⁺注入后,在800~1200℃高温进行常规退火处理。X射线光电子能谱(XPS)及X射线光电子衍射(XRD)等实验结果表明,当退火温度由800℃升高到1200℃后,薄膜部分结构由SiC_xN_y转变成SiN_x和SiC的混合结构。低温下利用真空紫外光激发,获得分别来自于SiN_x、SiC_xN_y、SiC的,位于2.95,2.58,2.29 eV的光致发光光谱。随着退火温度的升高,薄膜的结构发生了变化,发光光谱也有相应的改变。     

Nondoped blue fluorescent OLED based on cyanophenanthrimidazole‐styryl‐triphenylamine/carbazole materials

New 2‐(4′‐9H‐carbazole‐9‐yl)‐styryl‐1H‐phenathro[9,10‐d]imidazole‐1‐yl)benzonitrile (SPICN‐Cz) and 4‐(2‐(4‐(diphenylamino)phenyl‐styryl‐1H‐phenathro[9,10‐d]imidazole‐1‐yl)benzonitrile (SPICN‐TPA) have been synthesised, and their photophysical, electrochemical, and electroluminescent properties were analysed in comparison with their cyano‐free parent compounds, SPI‐Cz, and SPI‐TPA. Solvatochromic effects show the transformation of an excited state character from locally excited (LE) state to charge transfer (CT) state. Using time‐dependent density functional theory calculation, the excited state properties of these donor‐acceptor blue emissive materials have been analysed. Their excited state properties have been tuned by replacing the strong donor triphenylamine to weak donor carbazole to achieve the combination of high photoluminance efficiency locally excited (LE) component and high exciton‐utilizing CT component in one excited state. Hybridization processes between LE and CT components of SPICN‐Cz and SPICN‐TPA in the emissive state have been discussed. The nondoped organic light emitting diode device based on SPICN‐Cz exhibit better electroluminescent performances than those of SPICN‐TPA–based device: high external quantum efficiency of 2.58 %, current efficiency of 2.90 cd A^‐1, and power efficiency of 2.26 lm W^‐1 with Commission Internationale de l'Éclairage (CIE) coordinates of (0.15, 0.12). The excited state modulation and the composition of LE and CT states in the donor‐acceptor system could be useful to design low‐cost, high‐efficiency fluorescent organic light emitting diode materials.     

Synthesis of quantum-confined CdS nanotubes

CdS nanotubes with wall thickness comparable to excitonic diameter of the bulk material are synthesized by a chemical route. A change in experimental conditions result in formation of nanowires, and well-separated nanoparticles. The diameter and wall thickness of nanotubes measured to be 14.4 ±  6.1 and 4.7 ± 2.2 nm, respectively. A large number of CdS nanocrystallites having wurzite structure constitute these nanotubes. These nanotubes show high energy shifting of optical absorption and photoluminescence peak positions, compared to its bulk value, due to quantum confinement effect. It is proposed that nucleation and growth of bubbles and particles in the chemical reaction, and their kinetics and interactions are responsible for the formation of nanotubes.     

ZnO/SiO2 复合薄膜的光学性能

采用溶胶-凝胶法在玻璃衬底上制备ZnO/SiO₂复合薄膜,分别用XRD、TEM、SEM对样品的结构和形貌进行表征,并研究了不同ZnO含量对复合薄膜透过率及荧光特性的影响。结果表明,样品经500 ℃退火处理生成了SiO₂和ZnO,其晶粒尺寸为18.7 nm,薄膜具有双层结构。复合薄膜的透过率随着其中ZnO含量的增加而降低,禁带宽度减小,光学吸收边红移。样品在355 nm波长激发下产生了384 nm的紫外发射峰和440 nm的蓝光发射带,并随ZnO含量的增加而增强,它们分别来自ZnO的电子-空穴复合发光和缺陷发光,及ZnO/SiO₂复合薄膜双层结构的缺陷发光。