Photoluminescence properties of SHI induced F2 and F3 color centers in nano-granular LiF thin films

Photoluminescence (PL) properties of swift heavy ions-induced F₂ and F₃⁺ color centers in nano-granular lithium fluoride (LiF) thin film were studied. LiF films were deposited on glass and silica substrates and irradiated with various ion species (Ag, Ni and Au) at different irradiation temperatures. The role of ion species, their fluence and the irradiation temperature on the PL intensity of color centers induced in LiF thin films is discussed.     

Red Electroluminescence and Photoluminescence from Novel Binuclear Europium Complex with Squaric Acid Ligand

Organic electroluminescent devices (OELDs) have attracted much attention for several years because of their potential application in large area, multi-colored flat panel displays1-5. The green organic EL display using Alq3 as emitter was commercialized in 19976. However, red-emitting OELD with excellent properties has not been well developed. In order to realize practical full-color OELDs, it is considered very important to develop red and blue emitting materials with excellent propert…     

气源MBE外延自组装GeSi量子点的光致荧光

利用气源分子束外延技术(MBE)制作了GeSi自组装量子点样品.利用原子力显微镜(AFM)和光致荧光(PL)光谱研究了该量子点的形貌和光学性质.气源MBE在较低温度下生长的量子点材料具有较高的量子点覆盖度.200K以下载流子以局域激子形式束缚在量子点中,激子束缚能约为17 meV.升温至200 K,载流子的输运过程发生...     

Evolution of Zn based high purity phases under NH3 gas atmosphere and their PL properties

We report here the evolution of zinc based high purity phases with novel morphologies such as Zn₃N₂ hollow structures, ZnO nanowires and nanopowders, as well as metallic Zn layered hexagonal microparticles at progressively increased reaction temperature of 600 °C, 700 °C, 800 °C under NH₃ gas atmosphere using Zn powder precursor and keeping all other experimental parameters unchanged. Growth mechanism for Zn₃N₂ obtained by nitridation, ZnO by oxidation and Zn microparticles via thermal evaporation & condensation process are discussed briefly. The as-synthesized products were characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and scanning electron microscopy (SEM). Photoluminescence (PL) studies have revealed very interesting and infrequently observed emission bands at 378 and 661 nm for Zn₃N₂, 359 and 396 nm for ZnO as well as 389 nm for Zn polyhedral microparticles.     

Synthesis,growth mechanism and optical characterization of zinc nitride hollow structures

In this report, we describe the noncatalytic and template-free synthesis of zinc nitride (Zn₃N₂) novel microstructures with hollow interiors via simple nitridation reaction of zinc powder at optimum temperature of 600° C for 120 min in ammonia gas environment under atmospheric pressure. Hollow microstructures obtained were mostly of spherical shape with diameters in the range 8–35 μm and with open mouth on the surface. The growth mechanism has been proposed for the elucidation of hollow structures formation. Crystal structure and phase purity of the product were investigated by X-ray diffraction (XRD) characterization and energy dispersive X-ray spectroscopy (EDS) analysis confirmed the chemical composition of the product. Morphology of the as-prepared product was investigated using scanning electron microscopy (SEM). Ultraviolet–visible–near infrared (UV–vis–NIR) spectrophotometry was used to study the transmittance behaviour of zinc nitride microstructures and thereby an indirect optical band gap of 2.81 eV was calculated using Davis–Mott model. Room temperature photoluminescence (PL) studies exhibited two prominent peaks of the product; one very strong peak near band edge UV emission (395 nm) and other comparatively suppressed and broad peak at orange luminescence emission (670 nm).     

蓝色显示材料及器件的研究

用Ｈ２和ＣＳ２还原法制备Ｃｅ：ＳｒＳ发光材料，分析了两种方法对材料的结构及发光特性的影响，得到了最高亮度为９５０ｃｄ／ｍ＾２（１０００Ｈｚ）的Ｃｅ：ＳｒＳ薄膜电致发光（ＴＦＥＬ）器件；用高温固相法得到Ｃｅ：ＳｒＧａ２Ｓ４荧光粉，用射频溅射沉积的Ｃｅ：ＳｒＧａ２Ｓ４薄膜在６００℃以上、Ｈ２Ｓ气氛下快速热处理可以改善薄膜结晶性能，提高杂质激发峰强度，得到好的光致发光（ＰＬ）发光性能，以陶瓷片作为基片同     

Structural and optical properties of In0.5Ga0.5As/GaAs quantum dots in an In0.1Ga0.9As well using repeated depositions of InAs/GaAs short-period superlattices for the application of optical communication

We report structural and optical properties of In_0.5Ga_0.5As/GaAs quantum dots (QDs) in a 100 Å-thick In_0.1Ga_0.9As well grown by repeated depositions of InAs/GaAs short-period superlattices with atomic force microscope, transmission electron microscope (TEM) and photoluminescence (PL) measurement. The QDs in an InGaAs well grown at 510 °C were studied as a function of n repeated deposition of 1 monolayer thick InAs and 1 monolayer thick GaAs for n=5–10. The heights, widths and densities of dots are in the range of 6–22.0 nm, 40–85 nm, and 1.6–1.1×10¹⁰/cm², respectively, as n changes from 5 to 10 with strong alignment along [1 −1 0] direction. Flat and pan-cake-like shape of the QDs in a well is found in TEM images. The bottoms of the QDs are located lower than the center of the InGaAs well. This reveals that there was intermixing—interdiffusion—of group III materials between the InGaAs QD and the InGaAs well during growth. All reported dots show strong 300 K-PL spectrum, and 1.276 μm (FWHM: 32.3 meV) of 300 K-PL peak was obtained in case of 7 periods of the QDs in a well, which is useful for the application to optical communications.     

Polyol-mediated solvothermal synthesis and luminescence properties of CeF3, and CeF3:Tb nanocrystals

CeF₃ and CeF₃:Tb³⁺ nanocrystals were successfully synthesized through a facile and effective polyol-mediated route with ethylene glycol (EG) as solvent. Various experimental techniques including X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and photoluminescence (PL) spectra as well as decay dynamics were used to characterize the samples. The results indicated that the content of NH₄F and reactant concentrations were key factors in the product shape and size. Excessive NH₄F was necessary for the formation of hexagonal nanoplates. The specific morphology of product can be controlled by changing the NH₄F content and reactant concentrations. In addition, Tb³⁺ doped-CeF₃ sample shows strong green emission centered at 544 nm corresponding to the ⁵D₄-⁷F₅ transition of Tb³⁺. Due to the decrease of nonradiative decay rate, the lifetime of ⁵D₄ level of Tb³⁺ become longer gradually upon increasing the size of product.     

Visible and infrared luminescence properties of Er-doped Y2Ti2O7 nanocrystals

Er³⁺-doped Y₂Ti₂O₇ nanocrystals were fabricated by the sol-gel method. While the annealing temperature exceeds 757 °C, amorphous pyrochlore phase Er_xY_2−xTi₂O₇ transfers to well-crystallized nanocrystals, and the average crystal size increases from ∼70 to ∼180 nm under 800-1000 °C/1 h annealing. Er_xY_2−xTi₂O₇ nanocrystals absorbing 980 nm photons can produce the upconversion (526, 547, and 660 nm; ²H_11/2→⁴I_15/2, ⁴S_3/2→⁴I_15/2, and ⁴F_9/2→⁴I_15/2, respectively) and Stokes (1528 nm; ⁴I_13/2→⁴I_15/2) photoluminescence (PL). The infrared PL decay curve is single-exponential for Er³⁺ (5 mol%)-doped Y₂Ti₂O₇ nanocrystals but slightly nonexponential for Er³⁺ (10 mol%)-doped Y₂Ti₂O₇ nanocrystals. For 5 and 10 mol% doping concentrations, the mechanism of up-converted green light is the two-photon excited-state absorption. Much stronger intensity of red light relative to green light was observed for the sample with 10 mol% dopant. This phenomenon can be attributed to the reduced distance between Er³⁺-Er³⁺ ions, resulting in the enhancement of the energy-transfer upconversion and cross-relaxation mechanisms.     

Luminescence in trivalent rare earth activated Sr4Al2O7 phosphor

In this paper we report the combustion synthesis of trivalent rare-earth (RE³⁺ = Dy, Eu and Ce) activated Sr₄Al₂O₇ phosphor. The prepared phosphors were characterized by the X-ray powder diffraction (XRD) and photoluminescence (PL) techniques. Photoluminescence emission peaks of Sr₄Al₂O₇:Dy³⁺ phosphor at 474 nm and 578 nm in the blue and yellow region of the spectrum. The prepared Eu³⁺ doped phosphors were excited by 395 nm then we found that the characteristics emission of europium ions at 615 nm (⁵D₀?⁷F₂) and 592 nm (⁵D₀?⁷F₁). Photoluminescence (PL) peaks situated at wavelengths of 363 and 378 nm in the UV region under excitation at around 326 nm in the Sr₄Al₂O₇:Ce³⁺ phosphor.