The effect of discharge conditions of ICP etching reactor on plasma parameters

This study investigated the inductively coupled plasma etching reactor and RF coils developed by North Microelectronic Corporation. Full three dimensional simulations were made at different discharge conditions. The simulations examined and compared the distribution and non-uniformity of several plasma parameters at a fixed position upon the wafer at different pressures and coil currents. These parameters included electron density, electron temperature and power deposition. The results demonstrate that the electron density, power deposition and uniformity increase with either higher pressure or stronger coil currents, while the electron temperature decreases at this condition. Coil number increase can reduce the non-uniformity of parameters in the spatial distribution. The linear relationship between power deposition and electron density does not always exist. The comparison between simulation results and experiment results is also presented in the paper.     

The coupling of aryl halides in the ionic liquid [bmim]PF6

Several aryl halides have been coupled using the zero valent nickel catalyst [(PPh₃)_nNi(0)], to give the biaryl in moderate to good yield, employing the ionic liquid [bmim]PF₆. The ionic liquid and catalyst were recycled after extraction of the biaryl.     

Synthesis and Properties of Oligo-/Polymers Based on a “Flexible” Swivel-Cruciform Structure

We have introduced the concept of the so-called swivel type cruciforms as a highly flexible tool to tune the molecular properties from amorphous to highly crystalline features. Simple alkoxy substituted binaphthyl building blocks have been introduced randomly into poly(9,9-dioctylfluorene) (PFO) thereby suppressing the formation of side-chain crystallization. On the other hand the all aryl penta-thiophene based cruciform exhibited strong π–π interaction between the arms and gave one of the highest values reported to date for wet processed organic field effect transistors (OFETs) utilising oligothiophenes.     

亥姆霍兹线圈磁场的均匀性分析

引入磁场均匀度的概念，对亥姆霍兹线圈磁场的均匀性进行了定量分析，并通过计算机模拟，得出了同一精度下，形成亥姆霍兹线圈均匀磁场的最佳条件．     

HL-2M环向场线圈电磁场和受力的计算分析

在建的HL-2M装置的环向场线圈采用了比特板式结构,介绍了采用封闭多边形电流丝模型计算分析HL-2M装置环向场线圈电磁场和纹波情况;环向场线圈电流与环向场引起的电磁力以及与极向场产生的倾覆力也做了计算。计算结果对环向场线圈的设计具有一定的参考意义。     

电子成像均匀约束磁场的产生及测试分析

为增加离子与原子碰撞成像系统中探测电子的立体角，设计了一约束电子的复合型亥姆霍兹线圈装置.对复合型亥姆霍兹线圈的磁场分布进行了理论计算和分析，并对制作的复合型亥姆赫兹线圈产生的磁场进行了实验测量，得出磁场的均匀性好于±0.6%. 关键词： 亥姆霍兹线圈 磁场分布 磁场均匀性     

HL-2M 环向场线圈水冷数值模拟与分析

建立了环向场线圈的水冷计算模型,根据热传导和对流换热方程进行了数值模拟分析。计算结果表明：指形接头与铜板的界面接触热阻和接触电阻对指形接头的温升影响较大,但在平顶电流为140kA 及其电流平顶7s 时,由焦耳热引起的最高温升40℃以下,故环向场线圈的温度均不会超过80℃,且15min 后TF 线圈温度均降至30℃以下。在平顶电流为190kA 时,线圈通电持续时间可根据界面实测接触热阻、接触电阻以及线圈初始温度来确定。     

矩阵特征值Ky Fan定理的另一个推广

任给A∈Mn(n≥2),且A具有如下循环式分块形式     

Groups with many subgroups having polycyclic-by-finite layers or derived subgroup

A group is called (PF)L if the subgroups generated by its elements having same order (finite or infinite) are polycyclic-by-finite. In the present paper we prove that a group is locally graded minimal non-((PF)L∪(𝔓𝔉)𝔄) if, and only if, it is non-perfect minimal non-FC, where (𝔓𝔉)𝔄 denotes the class of (polycyclic-by-finite)-by-abelian groups. We prove also that a group of infinite rank whose proper subgroups of infinite rank are in ((PF)L∪(𝔓𝔉)𝔄) is itself in ((PF)L∪(𝔓𝔉)𝔄) provided that it is locally (soluble-by-finite) without simple homomorphic images of infinite rank. Our last result concerns groups that satisfy the minimal condition on non-((PF)L∪(𝔓𝔉)𝔄)-subgroups.     

高温超导YBCO线圈交流损耗的频率特性

YBCO线圈的交流损耗直接关系到YBCO设备的运行成本及稳定性。实现对YBCO线圈交流损耗的快速、准确测量,对于开展YBCO涂层导体的应用研究具有重要的意义。文中采用电测量法,在77K、零场和不同频率条件下,对YBCO线圈通以不同运行电流时产生的交流传输损耗进行测量。构建了YBCO线圈交流损耗的数值计算模型,对YBCO线圈交流损耗进行理论研究,最后将实验数据与理论计算结果进行比较,两者结果基本一致。可以发现,YBCO线圈在频率低于75Hz时,交流传输损耗随频率的增大而减小,当频率从75Hz增加到195Hz时,交流传输损耗随频率的增大而增加。