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691.
F. Javier del Campo J. García-Cspedes F. Xavier Muoz E. Bertrn 《Electrochemistry communications》2008,10(9):1242-1245
We present a methodology to fabricate carbon nanotube based electrodes using plasma enhanced chemical vapour deposition. The metal catalyst nanoparticles used to promote nanotube growth are removed using a water plasma treatment in combination with an acid attack. The final integrated microelectrode-based devices present excellent electrocatalytic properties that make them suitable for electrochemical applications. The presented methodology enables the construction of highly regular and dense vertically aligned carbon nanotube (VACNT) forests that can be confined within the patterned bounds of a desired surface. These VACNT electrodes display very low capacitive currents and are amenable to further chemical modifications. 相似文献
692.
Porous boron carbide preforms, prepared with and without excess carbon, were infiltrated with a Cu-Si alloy. Contrary to unalloyed copper, the Cu-Si alloy wets and infiltrates the porous preforms. A thermodynamic analysis of the B-C-Cu-Si system indicated that a Si content of the alloy above 15 at% leads to the formation of SiC. At higher Si content, the composition of boron carbide in contact with the melt also changes towards higher boron content. Metallographic examination validated these conclusions. The SiC compound forms preferentially around the free carbon particles in preforms containing excess carbon, and also in the vicinity of carbide that did not contain any excess carbon. Eventually, SiC, a product of the reaction between the carbide and the melt, forms a continuous barrier that impedes completion of the reaction and accounts for the limited increase of hardness as a result of lengthy heat treatments. 相似文献
693.
Structure,Composition, Mechanical,and Tribological Properties of BCN Films Deposited by Plasma Enhanced Chemical Vapor Deposition 总被引:1,自引:0,他引:1
In this work thin BCN films were deposited by plasma enhanced chemical vapor deposition (PECVD) using chloridic precursors.
Through adjusting the BCl3 content in the inlet gas mixture the chemical composition of the deposited films was changed from carbon rich to boron rich.
Based on optical emission spectroscopy (OES) measurements, a correlation between film composition and precursor species concentration
in the plasma was established. The films were amorphous as detected by grazing incidence X-ray diffraction (GIXRD). The hardness and the elastic modulus have maximal values of 25.5±1.2 and 191±6 GPa, respectively,
for the films with a boron concentration of 45.2 at.%. GIXRD data suggest that a depletion in boron content may initiate the
formation of graphitic domains in the amorphous matrix. The observed degradation of the mechanical properties is associated
with the graphitization. The tribological behavior was studied with a tribometer operated in pin-on-plate configuration at
the temperatures 25 and 400°C. The wear mechanisms were discussed with respect to the formation of a boric acid surface layer
which was detected by reflection electron energy loss spectroscopy (REELS) analysis. 相似文献
694.
The intrinsic n-type of epitaxial graphene on SiC substrate limits its applications in microelectronic devices, and it is thus vital to modulate and achieve p-type and charge-neutral graphene. The main groups of metal intercalations, such as Ge and Sn, are found to be excellent candidates to achieve this goal based on the first-principle calculation results. They can modulate the conduction type of graphene via intercalation coverages and bring out interesting magnetic properties to the entire intercalation structures without inducing magnetism to graphene, which is superior to the transition metal intercalations, such as Fe and Mn. It is found that the Ge intercalation leads to ambipolar doping of graphene, and the p-type graphene can only be obtained when forming the Ge adatom between Ge layer and graphene. Charge-neutral graphene can be achieved under high Sn intercalation coverage (7/8 bilayer) owing to the significantly increased distance between graphene and deformed Sn intercalation. These findings would open up an avenue for developing novel graphene-based spintronic and electric devices on SiC substrate. 相似文献
695.
Seokwon Lee Seokhun Kwon Kangmin Kim Hyunil Kang Jang Myoun Ko Wonseok Choi 《Molecules (Basel, Switzerland)》2021,26(22)
Carbon nanowall (CNW) and carbon nanotube (CNT) were prepared as anode materials of lithium-ion batteries. To fabricate a lithium-ion battery, copper (Cu) foil was cleaned using an ultrasonic cleaner in a solvent such as trichloroethylene (TCE) and used as a substrate. CNW and CNT were synthesized on Cu foil using plasma-enhanced chemical vapor deposition (PECVD) and water dispersion, respectively. CNW and CNT were used as anode materials for the lithium-ion battery, while lithium hexafluorophosphate (LiPF6) was used as an electrolyte to fabricate another lithium-ion battery. For the structural analysis of CNW and CNT, field emission scanning electron microscope (FE-SEM) and Raman spectroscopy analysis were performed. The Raman analysis showed that the carbon nanotube in composite material can compensate for the defects of the carbon nanowall. Cyclic voltammetry (CV) was employed for the electrochemical properties of lithium-ion batteries, fabricated by CNW and CNT, respectively. The specific capacity of CNW and CNT were calculated as 62.4 mAh/g and 49.54 mAh/g. The composite material with CNW and CNT having a specific capacity measured at 64.94 mAh/g, delivered the optimal performance. 相似文献
696.
Low-temperature synthesis of highly transparent conducting B-doped (p-type) nc-SiOX:H films has been pursued by 13.56 MHz plasma-CVD, using a combination of SiH4, CO2 and B2H6, diluted by H2 and He. Higher substrate temperature (TS) encourages nanocrystallization in B-doped nc-SiOX:H network by reducing bonded H-content, while bonded O-content also reduces simultaneously. At optimized TS = 150 °C, p–nc-SiOX:H film having an optical band gap ~1.98 eV, high conductivity ~0.18 S cm−1, has been obtained via dopant-induced escalation of the electrically active carriers at a deposition rate ~5.3 nm/min. The p–nc-SiOX:H film appears as a promising window layer for the top sub-cell of multi-junction silicon solar cells. A single-junction nc-Si:H based p-i-n solar cell of efficiency (η) ~7.14% with a current-density (JSC) ~14.18 mA/cm2, reasonable fill-factor (FF) ~66.2% and open-circuit voltage (VOC) ~0.7606 V has been fabricated, using the optimum p-type nc-SiOX:H as the window layer deposited at TS = 150 °C. 相似文献
697.
In this paper, the fracture process of a unidirectional CF/SiC single edge-notched beam (SENB) under three-point bending (TPB) is studied by means of macro/micro-statistical Monte Carlo simulation. The simulatedP-Δ curves are in agreement with the experimental results before the peaks of curves, and the simulated microevolution patterns are in agreement with the patterns of the crack surfaces, which have verified this method. It is preliminarily demonstrated that the second turning point in the compliance changing rate curve corresponds to the fracture initiation for experiments on SENB under TPB of unidirectional CF/SiC composites. 相似文献
698.
Gang Peng 《Frontiers of Physics》2018,13(4):137802
The quantum confinement effect is important in nanoelectronics and optoelectronics applications; however, there is a discrepancy between the theory of quantum confinement, which indicates that band-gap widening occurs only at small sizes, and experimental observations of band-gap widening in large-diameter nanowires (NWs). This paper reports an obvious blue shift of the absorption edge in the UV-visible absorption spectra of SiC NWs with diameters of 50–300 nm. On the basis of quantum confinement theory and high-resolution transmission electron microscopy images of SiC NWs, band-gap widening in SiC NWs with diameters of up to hundreds of nanometers is fully explained; the results could help to explain similar band-gap widening in other NWs with large diameters. 相似文献
699.
We preform first-principle calculations for the geometric, electronic structures and optical properties of SiC nanowires(NWs). The dielectric functions dominated by electronic interband transitions are investigated in terms of the calculated optical response functions. The calculated results reveal that the SiC NW is an indirect band-gap semiconductor material except at a minimum SiC NW(n = 12) diameter, showing that the NW(n = 12) is metallic. Charge density indicates that the Si–C bond of SiC NW has mixed ionic and covalent characteristics: the covalent character is stronger than the ionic character, and shows strong s–p hybrid orbit characteristics. Moreover, the band gap increases as the SiC NW diameter increases. This shows a significant quantum size and surface effect. The optical properties indicate that the obvious dielectric absorption peaks shift towards the high energy, and that there is a blue shift phenomenon in the ultraviolet region. These results show that SiC NW is a promising optoelectronic material for the potential applications in ultraviolet photoelectron devices. 相似文献
700.
The coupling effect of air-bridges on broadband spiral inductors in SiC-based MMIC technology has been investigated deeply. The fabricated 1-nH spiral inductor on SiC substrate demonstrates a self-resonant frequency of 51.6 GHz, with a peak Q-fact of 12.14 at 22.1 GHz. From the S-parameters measurements, the exponential decay phenomenon is observed for L, Q-factor, and SRF with the air-bridge height decreasing, and an analytic expression is concluded to exactly fit the measured data which can be used to predict the performance of the spiral inductor. All the coefficients in the formula have specific meaning. By means of establishing the lumped model, the parasitic coupling capacitance of the air-bridge has been extracted and presents the exponential decay with the air-bridge heights decreasing which indicates that this capacitor is directly related to the coupling effect of the air-bridge. Through the electromagnetic field distribution simulation, the details of the electric field around the air-bridge have been presented which demonstrate the formation and the variation principles of the coupling effect. 相似文献