The influence of various dielectric parameters on the reststrahlen region of SiC

The reststrahlen region of SiC is analysed with the goal of establishing the origin of different shapes of this band, by varying the dielectric parameters involved when simulating the reststrahlen region as obtained by infrared reflectance.     

Influence of MnO_2 Mineralizer on the Crystal Structure,Properties of SiC Kiln Furniture Bonded with Fine Silicon Powder

lINTRODUCTIONSiCkilnfllrniturepossessesgoodhigh-temperaturepropertiesandsmoothness.Itishighlyresistanttowarddeforming,slaggingandthermalshock.Thefurniturecanpracticallyresultinimprovingqualityandproductionofceramicsandiswidelyusedovertheworld.However,SiChassinteringtemperatureofupto2OOO:Ct13landitisdifficulttosinterasproductbyusingcommonkilnfurnace.Toserveashigh-temperaturerefractorykilnfurniture,itmustbemixedwithabonder.Thisworkus-esfinesiliconpowderasabonder,whichisadustproducedfroms…     

Interlayer interaction mechanism and its regulation on optical properties of bilayer SiCNSs

Silicon carbide nanosheets (SiCNSs) have a very broad application prospect in the field of new two-dimensional (2D) materials. In this paper, the interlayer interaction mechanism of bilayer SiCNSs (BL-SiCNSs) and its effect on optical properties are studied by first principles. Taking the charge and dipole moment of the layers as parameters, an interlayer coupling model is constructed which is more convenient to control the photoelectric properties. The results show that the stronger the interlayer coupling, the smaller the band gap of BL-SiCNSs. The interlayer coupling also changes the number of absorption peaks and causes the red or blue shift of absorption peaks. The strong interlayer coupling can produce obvious dispersion and regulate the optical transmission properties. The larger the interlayer distance, the smaller the permittivity in the vertical direction. However, the permittivity of the parallel direction is negative in the range of 150-300 nm, showing obvious metallicity. It is expected that the results will provide a meaningful theoretical basis for further study of SiCNSs optoelectronic devices.     

SiC粒子非均布引起铝基复合材料的损伤分析

 根据电镜断面考察结果，以Gurson模型为本构方程的有限单元 法对包体模型及三维非均匀模型进行了详细分析. 为了评价应力-应变 关系及损伤的主要因素，考虑了基体中SiC粒子的体积率和径比的非均 匀分布. 其结果表明，用这种非均匀模型能很好地仿真铝基体在大量塑 性变形之后所发生的韧窝破坏过程. SiC粒子体积率、径比及其位置的 非均匀性，对局部和整体损伤过程与应力-应变关系的影响相当大. 当 Sic粒子径比为1.0，并在基体中均匀分布时，断裂应变会大幅度增大.     

不同退火方式对Ni/SiC接触界面性质的影响

采用快速热退火(rapid thermal annealing, RTA)法和脉冲激光辐照退火(laser spark annealing, LSA)法, 在n型4H-SiC的Si面制备出Ni电极欧姆接触. 经传输线法测得RTA样品与LSA样品的比接触电阻分别为5.2×10^-4 Ω·cm², 1.8× 10^-4 Ω·cm². 使用扫描电子显微镜、原子力显微镜、透射电子显微镜、拉曼光谱等表征手段, 比较了两种退火方式对电极表面形貌、电极/衬底截面形貌和元素成分分布、SiC衬底近表层碳团簇微结构的影响. 结果表明, 相比于RTA, LSA法制备出的欧姆接触在电极表面形貌、界面形貌、电极层组分均匀性等方面都具有明显优势, 有望使LSA成为一种非常有潜力的制备欧姆接触的退火处理方法.     

High-pressure and high-temperature generation using diamond/sic composite anvils prepared with hot isostatic pressing

Using a hot isostatic pressing (HIP) technique, we synthesized diamond/SiC composites from diamond and Si powders. At an HIP condition of 1450 °C and 100 MPa, a pressure much lower than that of the diamond stability field, diamond powders react with molten Si to form well-sintered diamond/SiC composites. Cubes of the composites with 15 mm edge length were thereby fabricated, and an application to the second stage anvils in a Kawai-type high-pressure apparatus was attempted. A hybrid anvils system using four cubes of the composites and four of the conventional WC was introduced and heating experiments up to 1600 °C became possible. Because the diamond/SiC composites are transparent to X-rays, the present system is applicable not only to diffraction studies but also to radiographic studies that need a larger window for an X-ray image.     

2D-C/SiC拉伸损伤的声发射信号聚类分析

对2D-C/SiC复合材料进行常温拉伸试验,利用声发射(AE)仪在线监测其损伤过程.应用K-均值聚类算法对AE信号进行模式识别,结合扫描电镜观察,发现2IC/SiC复合材料拉伸过程的损伤模式包括基体开裂、界面层脱粘、层间剥离、纤维断裂以及纤维束断裂等,并得到了各种损伤模式AE信号参数的中心值.通过对不同损伤模式AE累积事件数和累积能量随时间变化的统计分析,描述了2DC/SiC复合材料拉伸损伤演化过程.     

SiC缓冲层对Si表面生长的ZnO薄膜结构和光电性能的改善

用脉冲激光沉积(PLD)技术制备了ZnO/SiC/Si和 ZnO/Si薄膜并制成了紫外探测器。利用X射线衍射(XRD),光致发光(PL)谱,I-V曲线和光电响应谱对薄膜的结构和光电性能进行了研究。实验结果表明:SiC缓冲层改善了ZnO薄膜的结晶质量和光电性能,其原因可能是SiC作为柔性衬底能够减少ZnO与Si 之间大的晶格失配和热失配导致的界面缺陷和界面态。     

Quantum states in fabricating poly-Si films

The quantum states are presented in these processions of fabricating poly-Si films. Amorphous silicon films prepared by PECVD has been crystallized by conventional furnace annealing (FA) and rapid thermal annealing (RTA), respectively. It is found that the thin films grain size present quantum states with the increasing of the gas flow ratios of SiH₄, H₂ mixture, substrate temperatures, frequency power, annealing temperature and time.     

TiO2纳米粒子膜表面性质的研究

ＴｉＯ_２纳米粒子膜在光催化降解大气和水中的污染物［１］、光电转换［２］、光致变色［３］等方面有广阔的应用前景,近年来受到了科学界的高度重视．研究表明,膜的表面性质对如上应用有着重要影响．本文采用等离子体化学气相沉积法（ＰＥＣＶＤ法）［４］制备了ＴｉＯ２的纳米粒子膜,分别采用ＴｉＣｌ４等离子体或Ｏ２等离子体处理膜表面,获得两种不同表面性质的ＴｉＯ２纳米粒子膜;并利用表面光电压谱（ＳＰＳ）和电场诱导表面光电压谱（ＥＦＩＳＰＳ）技术对膜的表面性质进行具体分析,探讨了其在光催化领域的可能应用．１实验部…