Relatively low temperature synthesis of graphene by radio frequency plasma enhanced chemical vapor deposition

We present a simple, low-cost and high-effective method for synthesizing high-quality, large-area graphene using radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) on SiO₂/Si substrate covered with Ni thin film at relatively low temperatures (650 °C). During deposition, the trace amount of carbon (CH₄ gas flow rate of 2 sccm) is introduced into PECVD chamber and the deposition time is only 30 s, in which the carbon atoms diffuse into the Ni film and then segregate on its surface, forming single-layer or few-layer graphene. After deposition, Ni is removed by wet etching, and the obtained single continuous graphene film can easily be transferred to other substrates. This investigation provides a large-area, low temperature and low-cost synthesis method for graphene as a practical electronic material.     

SiC晶体生长中流场的优化设计

物理气相输运法(PVT)是实验室最为常见的碳化硅(SiC)大块单晶生长方法.本文在碳化硅晶体生长模型化研究中,针对碳化硅单晶PVT生长过程中的传热传质等现象引入了对流传热中的场协同原理,利用这一原理对生长室内的流场温度场进行了优化,并对改良前后分别进行了数值模拟,研究了该原理对晶体生长的影响.实验室碳化硅单晶的生长成功...     

The influence of various dielectric parameters on the reststrahlen region of SiC

The reststrahlen region of SiC is analysed with the goal of establishing the origin of different shapes of this band, by varying the dielectric parameters involved when simulating the reststrahlen region as obtained by infrared reflectance.     

Influence of MnO_2 Mineralizer on the Crystal Structure,Properties of SiC Kiln Furniture Bonded with Fine Silicon Powder

lINTRODUCTIONSiCkilnfllrniturepossessesgoodhigh-temperaturepropertiesandsmoothness.Itishighlyresistanttowarddeforming,slaggingandthermalshock.Thefurniturecanpracticallyresultinimprovingqualityandproductionofceramicsandiswidelyusedovertheworld.However,SiChassinteringtemperatureofupto2OOO:Ct13landitisdifficulttosinterasproductbyusingcommonkilnfurnace.Toserveashigh-temperaturerefractorykilnfurniture,itmustbemixedwithabonder.Thisworkus-esfinesiliconpowderasabonder,whichisadustproducedfroms…     

Interlayer interaction mechanism and its regulation on optical properties of bilayer SiCNSs

Silicon carbide nanosheets (SiCNSs) have a very broad application prospect in the field of new two-dimensional (2D) materials. In this paper, the interlayer interaction mechanism of bilayer SiCNSs (BL-SiCNSs) and its effect on optical properties are studied by first principles. Taking the charge and dipole moment of the layers as parameters, an interlayer coupling model is constructed which is more convenient to control the photoelectric properties. The results show that the stronger the interlayer coupling, the smaller the band gap of BL-SiCNSs. The interlayer coupling also changes the number of absorption peaks and causes the red or blue shift of absorption peaks. The strong interlayer coupling can produce obvious dispersion and regulate the optical transmission properties. The larger the interlayer distance, the smaller the permittivity in the vertical direction. However, the permittivity of the parallel direction is negative in the range of 150-300 nm, showing obvious metallicity. It is expected that the results will provide a meaningful theoretical basis for further study of SiCNSs optoelectronic devices.     

SiC粒子非均布引起铝基复合材料的损伤分析

 根据电镜断面考察结果，以Gurson模型为本构方程的有限单元 法对包体模型及三维非均匀模型进行了详细分析. 为了评价应力-应变 关系及损伤的主要因素，考虑了基体中SiC粒子的体积率和径比的非均 匀分布. 其结果表明，用这种非均匀模型能很好地仿真铝基体在大量塑 性变形之后所发生的韧窝破坏过程. SiC粒子体积率、径比及其位置的 非均匀性，对局部和整体损伤过程与应力-应变关系的影响相当大. 当 Sic粒子径比为1.0，并在基体中均匀分布时，断裂应变会大幅度增大.     

不同退火方式对Ni/SiC接触界面性质的影响

采用快速热退火(rapid thermal annealing, RTA)法和脉冲激光辐照退火(laser spark annealing, LSA)法, 在n型4H-SiC的Si面制备出Ni电极欧姆接触. 经传输线法测得RTA样品与LSA样品的比接触电阻分别为5.2×10^-4 Ω·cm², 1.8× 10^-4 Ω·cm². 使用扫描电子显微镜、原子力显微镜、透射电子显微镜、拉曼光谱等表征手段, 比较了两种退火方式对电极表面形貌、电极/衬底截面形貌和元素成分分布、SiC衬底近表层碳团簇微结构的影响. 结果表明, 相比于RTA, LSA法制备出的欧姆接触在电极表面形貌、界面形貌、电极层组分均匀性等方面都具有明显优势, 有望使LSA成为一种非常有潜力的制备欧姆接触的退火处理方法.     

High-pressure and high-temperature generation using diamond/sic composite anvils prepared with hot isostatic pressing

Using a hot isostatic pressing (HIP) technique, we synthesized diamond/SiC composites from diamond and Si powders. At an HIP condition of 1450 °C and 100 MPa, a pressure much lower than that of the diamond stability field, diamond powders react with molten Si to form well-sintered diamond/SiC composites. Cubes of the composites with 15 mm edge length were thereby fabricated, and an application to the second stage anvils in a Kawai-type high-pressure apparatus was attempted. A hybrid anvils system using four cubes of the composites and four of the conventional WC was introduced and heating experiments up to 1600 °C became possible. Because the diamond/SiC composites are transparent to X-rays, the present system is applicable not only to diffraction studies but also to radiographic studies that need a larger window for an X-ray image.     

SiC1-xGex/SiC 异质结光电二极管特性的研究

使用二维器件模拟软件Medici, 对SiC_1-xGe_x/SiC异质结的光电特性进行了模拟.设计了N型重掺杂SiC层的厚度为1 μm, P型轻掺杂SiC_1-xGe_x层厚为0.4 μm, 二者之间形成突变异质结.在反向偏压3 V、光强度为 0.23 W/cm²的条件下, p-n+ SiC_0.8Ge_0.2/SiC和p-n+ SiC_0.7Ge_0.3/SiC敏感波长λ分别可以达到0.64 μm和0.7 μm, 光电流分别为7.765×10^－7 A/μm和7.438×10^－7 A/μm; 为了进一步提高SiC_1-xGe_x/SiC 异质结的光电流, 我们把p-n+两层结构改进为p-i-n三层结构.在同样的偏压、光照条件下, p-i-n SiC_0.8Ge_0.2/SiC和p-i-n SiC_0.7Ge_0.3/SiC的光电流分别达到1.6734×10－6 A/μm和1.844×10－6 A/μm.     

厚二氧化硅光波导薄膜制备及其特性分析

以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积(PECVD)技术，不使用掺杂，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。研究了薄膜折射率和淀积速率与工艺参量之间的关系，通过棱镜耦合仪、傅里叶变换红外光谱、原子力显微镜等测试手段，分析了薄膜的结构和光学特性。结果表明，实验能快速生长厚二氧化硅薄膜，薄膜表面平整，颗粒度均匀，同时薄膜具有折射率精确可控和红外透射性能好的特点，非常适合制作光波导器件。