Eight MeV per charge state from 300 ps laser ion acceleration by using micrometric foils

Proton acceleration using high-intensity laser pulses, at 10¹⁶ W/cm² was studied irradiating different types of thin metal and plastic targets having 1-micron thickness. The maximization of the proton energy process was investigated optimizing the laser parameters, the irradiation conditions and the target properties. Employing 600–700 J laser pulse energy, a focalization inducing self-focusing effects and using targets with optimized thickness, it was possible to accelerate protons up to energies of above 8 MeV. The time-of-flight diagnostics has allowed to monitor the plasma properties and to control the ion acceleration process.     

面向单晶SiC原子级表面制造的等离子体辅助抛光技术

目前Si基半导体由于其自身材料特性的限制,已经越来越难以满足高速发展的现代电力电子技术对半导体器件的性能要求.SiC作为新一代半导体材料具有显著的性能优势,但由于其属于典型的难加工材料,实现SiC晶圆的高质量与高效率加工成为了推动其产业化应用进程的关键.本综述在回顾近年来SiC超精密加工技术研究进展的基础上,重点介绍了一种基于等离子体氧化改性的SiC高效超精密抛光技术,分析了该技术的材料去除机理、典型装置、改性过程及抛光效果.分析结果表明,该技术具有较高的去除效率,能够获得原子级平坦表面,并且不会产生亚表面损伤.同时针对表面改性辅助抛光技术加工SiC表面过程中出现的台阶现象,探讨了该台阶结构的产生机理及调控策略.最后对等离子体辅助抛光技术的发展与挑战进行了展望.     

Selective area laser deposition of FCC beta silicon carbide

Silicon Carbide (SiC) has been deposited onto an alumina substrate by the thermal decomposition of the gaseous precursor tetramethylsilane (TMS). A 500 W ytterbium fibre laser was used to heat the surface of an alumina substrate locally, resulting in deposition of SiC at the sample surface. The SiC deposit was analysed using energy dispersive X‐ray spectroscopy and X‐ray diffraction (XRD). The deposit was confirmed to be silicon carbide and found to be face centre cubic (FCC) crystal structure. Raman spectroscopy was used to measure the stoichiometry of the deposit which initially was found to be carbon rich. Further analysis by Raman spectroscopy suggests the deposit may be more stoichiometric following a two hour thermal treatment of the sample at 600 degrees celcius in an atmosphere of air.     

Microstructure of nickel nanoparticles embedded in carbon films: case study on annealing effect by micromorphology analysis

The presented study is aimed at analyzing the surface texture of amorphous hydrogenated carbon layers containing nickel nanoparticles (Ni‐NPs@a‐C:H) within their structure, which were deposited by Radio Frequency (RF) sputtering and RF‐Plasma Enhanced Chemical Vapor Deposition (RF‐PECVD) methods on glass substrates. Prepared films were then used as research material following their annealing at two different temperatures of 250 °C and 350 °C in an inert argon atmosphere. Series of height samples were taken with the help of atomic force microscopy (AFM) operating in a non‐contact mode and examined in order to determine their fractal characteristics. Raw AFM data were first plane‐fitted to remove the surface bow exhibiting the so‐called residual surface, and then numerically processed to calculate the Areal Autocorrelation Function (AACF), which was later used to compute the Structure Function (SF). The log–log plots of the latter served for calculation of fractal properties of surfaces under investigation, including fractal dimension D, and pseudo‐topothesy K. The analysis of 3‐D surface texture helps to understand their essential characteristics and their implications as well as graphical models and their implementation in computer simulation. Copyright © 2016 John Wiley & Sons, Ltd.     

大视场光学遥感器焦平面板的研制

焦平面板作为承载TDICCD器件的部件,其强度、动静态刚度、热稳定性直接影响到遥感器的成像质量.针对目前光学遥感器大视场、宽覆盖的发展趋势,设计了一种新型的焦平面板.选用性能指标优良的高体份SiC/Al复合材料,既满足了结构设计指标的要求,同时又大大降低了产品重量.通过有限元模拟仿真分析和相关试验,验证了设计方案的可行...     

First-principles study of thiophene on β-SiC (0 0 1)-(2×1) surface

In this work, we performed density functional calculations to examine the molecular adsorption states of thiophene on β-SiC(0 0 1)-2×1 surface. A number of possible adsorption geometries are considered into two groups as the polymeric thiophene chain and the individual molecules covalently bonded onto the surface. The results show that the polymeric chain on the surface is the less stable adsorption case and individual arch like adsorption case structure is more stable than others. In all adsorption cases, the adsorbed SiC surfaces are characterized as different semiconductors.     

Relatively low temperature synthesis of graphene by radio frequency plasma enhanced chemical vapor deposition

We present a simple, low-cost and high-effective method for synthesizing high-quality, large-area graphene using radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) on SiO₂/Si substrate covered with Ni thin film at relatively low temperatures (650 °C). During deposition, the trace amount of carbon (CH₄ gas flow rate of 2 sccm) is introduced into PECVD chamber and the deposition time is only 30 s, in which the carbon atoms diffuse into the Ni film and then segregate on its surface, forming single-layer or few-layer graphene. After deposition, Ni is removed by wet etching, and the obtained single continuous graphene film can easily be transferred to other substrates. This investigation provides a large-area, low temperature and low-cost synthesis method for graphene as a practical electronic material.     

人工晶体最新研究进展

This paper briefly reviews the progress of crystal growth and crystal materials in China during recent years.     

甚高频等离子体增强化学气相沉积法沉积μc-Si∶H薄膜中氧污染的初步研究

对不同的本底真空条件下,采用甚高频等离子体增强化学气相沉积技术沉积的氢化微晶硅（μc_Si∶H）薄膜中的氧污染问题进行了比较研究.对不同氧污染条件下制备的薄膜样品的x射线光电子能谱与傅里叶变换红外吸收光谱测量结果表明：μc_Si∶H薄膜中,氧以Si—O，O—O和O—H三种不同的键合模式存在,不同的键合模式源自不同的物理机理.μc_Si∶H薄膜的Raman光谱、电导率与激活能的测量结果进一步显示：沉积过程中氧污染程度的不同,对μc_Si∶H薄膜的结构特性与电学特性产生显著影响；而不同氧污染对μc_Si∶H薄膜电学特性的影响不同于氢化非晶硅（a_Si:H）薄膜. 关键词： 氢化微晶硅薄膜 甚高频等离子体增强化学气相沉积 氧污染     

LD泵浦的被动调QYb:YAG薄片激光器实验研究

采用中心波长为940nm的激光二极管泵浦,实现了Yb:YAG薄片的Cr4+:YAG被动调Q激光输出.Yb:YAG薄片掺杂Yb3+离子浓度为10%,厚度为500μm.理论上计算了Yb:YAG薄片在直接水冷方式与不同厚度SiC冷却方式下的温度分布.实验中采用厚度800μm的SiC冷却方式,获得了最高功率2.8 W的1 030nm连续激光输出,输出功率相比直接水冷方式提高了40%.通过Degnan理论优化了被动调Q晶体Cr4+:YAG的初始透过率和输出耦合镜,采用初始透过率为93%的Cr4+:YAG晶体和透过率为10%的输出耦合镜,在800μm SiC冷却方式下,获得了平均输出功率1.95 W、单脉冲能量1.2mJ、脉冲宽度74ns、重复频率1.6kHz的稳定调Q脉冲输出,斜效率为18.1%.光束质量因子M2x=1.622,M2y=1.616.