氮化铟p型掺杂的第一性原理研究

采用基于密度泛函理论(DFT)的总体能量平面波超软赝势法，对Mg，Zn，Cd掺杂InN的32原子超原胞体系进行了几何结构优化，从理论上给出了掺杂和非掺杂体系的晶体结构参数，其中非掺杂体系的理论值与实验值符合很好. 计算了掺杂InN晶体的结合能，总体态密度、集居数，差分电荷密度，并对此做了细致的分析. 计算结果表明，相对于Zn和Cd，Mg_In在InN中的溶解度会更大，并能提供更多的空穴态，非常有利于InN的p型掺杂. 关键词： 氮化铟 p型掺杂 电子结构 第一性原理     

掺杂稀土离子晶体中的电磁感应光透明现象

对在掺杂稀土离子晶体中实现电磁感应光透明进行了实验研究。首先,以Er3＋∶YAG晶体为样品,用旋转波近似下的密度矩阵方程理论计算了探测场的吸收特性随Er3＋离子浓度的变化规律,结果表明：在探测场失谐Δp=0时,形成了一个对于探测光透明的窗口,从而在理论上论证了在掺杂稀土离子晶体中实现电磁感应光透明效应的可行性。设计了一个以Pr3＋∶Y2SiO5晶体为样品的实验激发方案,吸收光谱显示,当温度为6 K时其在共振吸收峰处可形成一个完全透明的窗口,实现了在掺杂离子晶体中的电磁感应光透明。实验还分析了工作温度、耦合场失谐对探测光透过率的影响,结果显示：当样品温度上升到15 K时,透明窗口消失;耦合场的失谐量越大,透射率越小。     

Free standing modulation doped core–shell GaAs/AlGaAs hetero‐nanowires

Modulation doped AlGaAs/GaAs core–shell nanowire structures were grown by molecular beam epitaxy. A Si delta‐doping was introduced in the AlGaAs shell around the {110} facets of the GaAs core. The wires are typically highly resistive at low temperatures. However, they show a pronounced persistent photoconductivity effect indicating activation of free carriers from the delta‐doped shell to the GaAs core. The n‐type character of the channel is demonstrated by applying a back‐gate voltage. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Adsorption dynamics of O2 on Cu(1 0 0)

We have studied the adsorption of O₂ on the Cu(1 0 0) surface using both static potential energy surface (PES) calculations and ab initio molecular dynamics. The dynamical calculations complement the PES results, revealing steering effects which could not be predicted based on the static calculations only. We study the effect of oxidation and Ag doping on O₂ adsorption dynamics. The results are discussed in the light of recent molecular beam experiments.     

Energy levels in doped SiGe quantum well studied by admittance spectroscopy

SiGe/Si quantum wells (QWs) with different Boron doping concentrations were grown by molecular beam epitaxy (MBE) on p-type Si(1 0 0) substrate. The activation energies of the heavily holes in ground states of QWs, which correspond to the energy differences between the heavy hole ground states and Si valence band, were measured by admittance spectroscopy. It is found that the activation energy in a heavily doped QW increases with doping concentration, which can be understood by the band alignment changes due to the doping in the QWs. Also, it is found that the activation energy in a QW with a doping concentration of 2 × 10²⁰ cm⁻³ becomes larger after annealing at a temperature of 685 °C, which is attributed to more Boron atoms activation in the QW by annealing.     

Structures,Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

The doping of semiconductor nanocrystals (NCs) is crucial for the optimization of the performance of devices based on them. In contrast to recent progress on the doping of compound semiconductor NCs and silicon NCs, the doping of germanium (Ge) NCs has lagged behind. Here it is shown that Ge NCs can be doped with phosphorus (P) during synthesis by a nonthermal plasma. It is found that there are more P atoms in the NC near‐surface region than in the NC core. P doping modifies the surface state of Ge NCs. Compressive strain can be incuced in Ge NCs by P which can explain the P‐doping‐enhanced oxidation resistance of Ge NCs. Stable dispersions of P‐doped Ge NCs in acetonitrile can be cast to produce films for field‐effect transistors (FETs). FET analysis shows that the electrical conductivity and electron mobility of a Ge‐NC film increase with the increase of the P doping level, although the electrical activation efficiency of P in the Ge‐NC film is low. Finally, atomic layer deposition of aluminum oxide at the surface of P‐doped Ge NCs is shown to improve the performance of the FETs.     

Oxygen defect dependent variation of band gap,Urbach energy and luminescence property of anatase,anatase–rutile mixed phase and of rutile phases of TiO2 nanoparticles

TiO₂ nanoparticles are prepared by a sol–gel method and annealed both in air and vacuum at different temperatures to obtain anatase, anatase–rutile mixed phase and rutile TiO₂ nanoparticles. The phase conversion from anatase to anatase–rutile mixed phase and to rutile phase takes place via interface nucleation between adjoint anatase nanocrystallites and annealing temperature and defects take the initiate in this phase transformation. The samples are characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), UV–vis and photoluminescence spectroscopy (PL). Anatase TiO₂ exhibits a defect related absorption hump in the visible region, which is otherwise absent in the air annealed samples. The Urbach energy is very high in the vacuum annealed and in the anatase–rutile mixed phase TiO₂. Vacuum annealed anatase TiO₂ has the lowest emission intensity, whereas an intense emission is seen in its air annealed counterpart. The oxygen vacancies in the vacuum annealed samples act as non-radiative recombination centers and quench the emission intensity. Oxygen deficient anatase TiO₂ has the longest carrier lifetime. Time resolved spectroscopy measurement shows that the oxygen vacancies act as efficient trap centers of electrons and reduce the recombination time of the charge carriers.     

Ga掺杂对ZnO纳米结构可见光发射的抑制效应

采用碳热还原反应和原位掺杂的方法制备了不同Ga掺杂浓度的ZnO纳米结构. X射线衍射 显示掺杂纳米结构中为单一的氧化锌纤锌矿结构. 扫描电子显微镜 观测发现随掺杂浓度的增大, 纳米结构的形貌逐渐从纳米六棱柱变为纳米锥.光致发光 和X射线光电子能谱 测量分别发现随着掺杂浓度升高, 纳米结构的可见发光强度和其中空位 氧峰相对强度逐渐减小直至消失, 两者存在很强的相关性. 上述结果为ZnO可见光发射的氧空位机理提供了新的实验证据. 对Ga掺杂抑制纳米结构中氧空位的原因进行了分析.     

Study on structure and properties of transition metal doped BiF3 by first-principles

Structure and physical properties of BiF₃ doped with M=Cr, Cu, Fe, Mn, Ni, Ti, V and Co are calculated by the DFT+U method. Effect of metal doping on the electronic structure and optical response of host materials BiF₃ is investigated systematically. New energy levels are formed and located within the band gap, which could decrease the recombination rate of e⁻/h⁺ pairs. Furthermore, transition metal doping extends the optical absorption of BiF₃ to the visible spectral region.     

Electronic properties of anatase TiO2 doped by lanthanides: A DFT+U study

The effects of mono-doping of 4f lanthanides with and without oxygen vacancy defect on the electronic structures of anatase TiO₂ have been studied by first-principles calculations with DFT+U (DFT with Hubbard U correction) to treat the strong correlation of Ti 3d electrons and lanthanides 4f electrons. Our results revealed that dopant Ce is easy to incorporate into the TiO₂ host by substituting Ti due to its lower substitutional energy (∼−2.0 eV), but the band gap of the system almost keeps intact after doping. The Ce 4f states are located at the bottom of conduction band, which mainly originates from Ti 3d states. The magnetic moment of doped Ce disappears due to electron transfer from Ce to the nearest O atoms. For Pr and Gd doping, their substitutional energies are similar and close to zero, indicating that both of them may also incorporate into the TiO₂ host. For Pr doping, some 4f spin-down states are located next to the bottom of the conduction band and narrow the band gap of the doping system. However, for Gd doping, the 4f states are located in deep valence band and there is no intermediate band in the band gap. The magnetic moment of dopant Gd is close to the value of isolated Gd atom (∼7 μB), indicating no overlapping between Gd 4f with other orbitals. For Eu, it is hard to incorporate into the TiO₂ host due to its very higher substitutional energy. The results also indicated that oxygen vacancy defect may enhance the adsorption of the visible light in Ln-doped TiO₂ system.