同轴型爆磁压缩发生器1维磁扩散模型

 基于１维爆轰驱动模型、爆炸管与金属固壁的１维磁扩散模型及回路等效电路模型,编制了关于轴线起爆大电流同轴型爆磁压缩发生器的数值模拟程序CEMG2.0。应用该程序对洛斯·阿拉莫斯实验室设计试验的43 cm长Ranchero发生器进行了对比模拟,结果证明CEMG2.0程序所采用的模型是合理的,可以应用于今后同类发生器的优化设计。     

基于改进区域生长法的电力设备红外图像分割

为实现电力设备红外图像中目标设备图像的分割,对传统区域生长法需要人工选择初始种子点,以及易产生过分割与欠分割的不足提出了改进,将红外图像中邻域均值最大的像素点作为种子点,实现种子点的自动选取。提出了使用Sobel算子计算梯度幅值作为附加限定条件的生长准则。改进的区域生长法的分割效果比传统的区域生长法效果更好。     

电力设备红外图像的小波阈值去噪方法研究

对于电力设备的红外图像自动检测系统,图像去噪是非常关键的。针对传统的小波硬、软阈值函数在去噪时存在的不足,在传统小波硬、软阈值函数的基础上对其进行了改进。改进的阈值函数克服了硬阈值函数不连续的缺陷,改善了软阈值函数具有恒定偏差的不足,并引入了两个变量,具有一定的灵活性。同时还使用了一种新的分层阈值选择函数代替统一阈值方法,以改善实际应用的效果。实验结果表明:改进的小波阈值去噪方法在视觉效果、峰值信噪比和均方误差方面都优于传统的硬、软阈值去噪方法;改进的小波阈值去噪方法可以运用到红外图像自动检测系统中,使系统具有更好的去噪效果。     

无人值守变电站电力设备音频监测及故障诊断系统

针对智能变电站的无人值守需求及现有故障诊断系统的不足,提出一种电力设备音频监测及故障诊断系统。根据变电站电力设备音频信号信噪比较低的特点,采用具有强鲁棒性的梅尔频率倒谱系数作为判断音频信号异常的特征参数,在此基础上根据音频特征构成多样本观测序列,并采用隐马尔科夫模型进行故障诊断,通过对比对数似然估计概率的输出值确定故障类型。该方法具有实时性较强的优势,也避免了现有故障诊断方法要求较大样本容量的缺陷。实验结果表明,该故障诊断系统具有较高的识别率和鲁棒性。     

Oxygen nonstoichiometry, defect structure and electrical properties of LaFe0.7Ni0.3O3 − δ

Oxygen nonstoichiometry (δ), total conductivity (σ) and thermoelectric power (S) of the LaFe_0.7Ni_0.3O_3 − δ sample have been studied as functions of temperature and oxygen partial pressure. Based on the results of the direct reduction of the sample in hydrogen flow at 1100 °C the absolute oxygen content (3 − δ) has been found to vary from 2.999 to 2.974 in the range of 1273-1373 K and 10^− 3-0.21 atm. The point defect equilibrium models have been proposed and fitted to the set of experimental data in the form of log p(O₂) = f(δ)_T dependences. The values of standard thermodynamic quantities of defect formation reactions have been assessed. The joint analysis of oxygen nonstoichiometry, total conductivity and thermoelectric power has been performed using a small-polaron approach. The values of partial conductivity, partial thermopower and mobilities of electronic charge carriers have been calculated. The p-type semiconducting behavior of LaFe_0.7Ni_0.3O_3 − δ has been explained by the higher mobility values of electron holes than those of electrons in the whole range of thermodynamic parameters studied.     

非匹配负载对宽带脉冲产生器谐振特性的影响

 宽带脉冲产生器的谐振特性决定了产生电磁脉冲的频谱,分析了带耦合器的同轴1/4波长谐振器在负载为非完全匹配天线时,天线反射对谐振特性的影响。通过建立级联二端口微波网络分析模型,将非匹配负载的反射系数计入等效耦合器反射系数中,得到了输出脉冲及辐射场频谱与负载反射系数的关系式。数值模拟了包括谐振器、耦合器和天线在内的整个宽带脉冲辐射系统,得到的辐射场频谱与理论预期相符。由于负载反射的影响,在中心频率两侧产生了两个副峰,在高功率实验中也观察到了该现象。     

高功率窄脉宽半导体激光激励器设计

为了获得高功率窄脉宽半导体激光,设计了半导体激光器相应的激励单元,论述MOSFET作为高速开关的工作机理,分析基于MOSFET作为高速开关产生窄的大电流脉冲的电路模型.为了使MOSFET开关速度尽可能快,根据前述分析,提出推挽式MOSFET栅极驱动方式并设计了触发窄脉冲的发生电路.当激光二极管接入放电回路时,实验表明:激光二极管输出光的峰值功率可达67.5 W,脉宽约为20 ns.最后,简要分析了影响光脉冲宽度的因素.     

大功率限幅器的研制

介绍了一种L波段大功率限幅器的研制情况,该限幅器具有体积小、插入损耗小、输入承受功率高及限幅输出电平低等特点。文中给出了限幅二极管在高/低输入信号电平时的等效电路以及同轴滤波器的设计分析过程。实验测试结果表明,限幅器完全达到技术指标要求。     

高能COIL偏振态的实验研究

 通过两块楔镜补充衰减和中性衰减片相结合的能量衰减方法,测得了功率密度为20 W/mm² COIL的偏振态。采用角反射器作为稳定腔折返装置,提高了激光能量分布的均匀性。激光光束分别以45°的入射角入射到两块楔镜上,被楔镜反射后,垂直通过中性衰减片,最后进入偏振态测试仪。实验结果表明：在腔内没有任何偏振选择器件和不加外部电磁场的情况下,采用折叠式稳定腔的横流双模块氧碘化学激光光束呈现部分偏振性质,而且在出光过程中偏振度逐渐降低。     

Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors

The thermal resistance matrix including self-heating thermal resistance and thermal coupling resistance is presented to describe the thermal effects of multi-finger power heterojunction bipolar transistors. The dependence of thermal resistance matrix on finger spacing is also investigated. It is shown that both self-heating thermal resistance and thermal coupling resistance are lowered by increasing the finger spacing, in which the downward dissipated heat path is widened and the heat flow from adjacent fingers is effectively suppressed. The decrease of self-heating thermal resistance and thermal coupling resistance is helpful for improving the thermal stability of power devices. Furthermore, with the aid of the thermal resistance matrix, a 10-finger power heterojunction bipolar transistor (HBT) with non-uniform finger spacing is designed for high thermal stability. The optimized structure can effectively lower the peak temperature while maintaining a uniformity of the temperature profile at various biases and thus the device effectively may operate at a higher power level.