Heat transfer enhancement in MOSFET mounted on different FR4 substrates by thermal transient measurement

Miniaturization of electronic package leads to high heat density and heat accumulation in electronics device, resulting in short life time and premature failure of the device. Junction temperature and thermal resistance are the critical parameters that determine the thermal management and reliability in electronics cooling. Metal oxide field effect transistor (MOSFET) is an important semiconductor device for light emitting diode-integrated circuit (LED IC) driver application, and thermal management in MOSFET is a major challenge. In this study, investigations on thermal performance of MOSFET are performed for evaluating the junction temperature and thermal resistance. Suitable modifications in FR4 substrates are proposed by introducing thermal vias and copper layer coating to improve the thermal performance of MOSFET. Experiments are conducted using thermal transient tester (T3ster) at 2.0 A input current and ambient temperature varying from 25 ℃to 75 °C. The thermal parameters are measured for three proposed designs: FR4 with circular thermal vias, FR4 with single strip of copper layer and embedded vias, and FR4 with I-shaped copper layer, and compared with that of plain FR4 substrate. From the experimental results, FR4_I-shaped shows promising results by 33.71% reduction in junction temperature and 54.19% reduction in thermal resistance. For elevated temperature, the relative increases in junction temperature and thermal resistance are lower for FR4_I-shaped than those for other substrates considered. The introduction of thermal vias and copper layer plays a significant role in thermal performance.     

Effect of oblique incidence angle of sunlight on the optimized folding angle of V-shaped organic solar cells

We numerically investigate the effect of the incidence angle of sunlight on the optimized folding angle of V-shaped organic solar cells (VOSCs) to obtain the best power conversion efficiency in a realistically operating environment. The light absorbance at the active layer is calculated based on the finite element method with respect to the incidence angle of sunlight and the folding angle of the VOSC. We calculate the generation energy density per day at each folding angle by integrating the angular response of the short-circuit current and the open-circuit voltage with the consideration of the variation of the incidence angle during daytime. We show that the optimized folding angle of the VOSC based on the variation of the generation energy density per day is close to that determined from the variation of the electric power density in normal incidence, which has been widely used to optimize the folding angle of VOSCs.     

Curved Ferroelectric Liquid Crystal Matrix Displays Driven by Field-Sequential-Color and Active-Matrix Techniques

This paper describes a curved field-sequential-color matrix display using fast-response ferroelectric liquid crystal. Black matrix and transparent electrode patterns were formed on a thin plastic substrate by a transfer method from a glass substrate. While a composite film of liquid crystal and micro-polymers of walls and fibers was formed between the flexible substrates by printing, laminating and curing processes of a solution of monomers and liquid crystal, the mechanical stability was enhanced by use of multi-functional monomers to form large display panels. The image pixels of the matrix panel were driven by an active matrix scheme using an external switch transistor array at a frequency of 180 Hz for intermittent three-primary-color backlight illumination. The flexible A4-paper-sized color display with 24 × 16 pixels and 60 Hz field frequency was demonstrated by illuminating it with sequential three-primary-color lights from light-emitting diodes of the backlight. Our display system is useful in various information displays because of its freedom of setting and location.     

一种用于电光开关的高速、高压电脉冲的产生

介绍了一种用于电光开关驱动源的高压超快电脉冲产生技术;电路采用级联的雪崩晶体管串和微波传输线结构,输出阻抗50Ω;在50Ω负载情况下,获得脉冲下降时间为1ns、幅度达到5kV、峰值电压为6.4 kV、幅度和半宽度稳定性优于2％、触发晃动为±15ps、触发延时为30 ns,脉冲峰值电流为128 A的高压高速大电流脉冲.     

Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors

The thermal resistance matrix including self-heating thermal resistance and thermal coupling resistance is presented to describe the thermal effects of multi-finger power heterojunction bipolar transistors. The dependence of thermal resistance matrix on finger spacing is also investigated. It is shown that both self-heating thermal resistance and thermal coupling resistance are lowered by increasing the finger spacing, in which the downward dissipated heat path is widened and the heat flow from adjacent fingers is effectively suppressed. The decrease of self-heating thermal resistance and thermal coupling resistance is helpful for improving the thermal stability of power devices. Furthermore, with the aid of the thermal resistance matrix, a 10-finger power heterojunction bipolar transistor (HBT) with non-uniform finger spacing is designed for high thermal stability. The optimized structure can effectively lower the peak temperature while maintaining a uniformity of the temperature profile at various biases and thus the device effectively may operate at a higher power level.     

Effect of pure and mixed solvents on the solubility, crystal growth and morphology of ethyl p-dimethylamino benzoate (EDMAB): An organic nonlinear optical material

The effects of pure and mixed solvents of ethanol and acetone on solubility, nucleation and growth of ethyl p-dimethylamino benzoate (EDMAB) were investigated. It was found that solubility of EDMAB increased as the volume ratio of acetone increased in the mixed solvent. Growth experiments were performed at 32 °C using pure and mixed solvents with different volume ratios of ethanol and acetone. Bulk single crystals of EDMAB were grown-in the experiment conducted using mixed solvent of 25% acetone and 75% of ethanol, whereas thin platelet crystal of EDMAB was obtained in the experiment conducted using pure ethanol. The acetone rich system resulted in uncontrolled nucleation with large number of tiny crystals, possibly due to high vapor pressure of acetone. The grown crystals were subjected to various analytical studies such as powder X-ray diffraction, Vickers microhardness, dielectric studies as a function of frequency and optical transmission and the powder Kurtz method.     

三元铱配合物磷光体系的白光有机电致发光器件光谱特性研究

将黄光磷光材料bis[2-(4-tertbutylphenyl)benzothiazolato-N,C2’]iridium (acetylacetonate) [(t-bt)₂Ir(acac)]超薄层作为黄光发光层,两个蓝光磷光染料iridium(Ⅲ) bis(4’,6’-difluorophenylpyridinato)tetrakis(1-pyrazolyl)borate (FIr6)和bis[(4,6-difluorophenyl)-pyridinato-N,C2’](picolinate) iridium (Ⅲ) (FIrpic)掺杂层作为蓝光发光层,制备了三元发光层的白光有机电致发光器件。该器件具有三元磷光染料分子协同发光特性,并且利用合适厚度的隔层,将三线态激子束缚在各自激子复合区域内,获得了稳定电致发光光谱,CIE色坐标为(0.29±0.01, 0.34±0.01),处于理想的白光区域。通过器件电学特性的测试,验证了磷光染料在三元发光层器件中电致发光作用的机理,同时结果表明,三元发光层器件由于稳定的激子复合区域而有效减弱了器件效率滚降现象。     

Ge组分分布对基区杂质非均匀分布的SiGe HBT温度特性的影响

众所周知, 双极型晶体管的设计主要是基区的设计. 一般而言, 基区的杂质分布是非均匀的. 本文首先研究了非均匀的杂质高斯分布对器件温度分布、增益和截止频率的温度特性的影响, 发现增益和截止频率具有正温度系数, 体内温度较高. 随后研究了基区Ge组分分布对这些器件参数的影响. 均匀Ge组分分布和梯形Ge组分分布的SiGe 异质结双极型晶体管增益和截止频率具有负温度系数, 具有较好的体内温度分布. 进一步的研究表明, 具有梯形Ge组分分布的SiGe 异质结双极型晶体管, 由于Ge组分缓变引入了少子加速电场, 不但使它的增益和截止频率具有较高的值, 而且保持了较弱的温度敏感性, 在增益、特征频率大小及其温度敏感性、体内温度分布达到了很好的折中.     

Pulsed microwave damage trend of bipolar transistor as a function of pulse parameters

In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwave (HPM), and investigate the thermal accumulation effect as a function of pulse repetition frequency (PRF) and duty cycle. A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density. The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz. The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time. Adopting the fitting method, the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained. Moreover, the accumulation temperature decreases with duty cycle increasing for a certain mean power.     

Room-temperature flexible thin film transistor with high mobility

We report a room-temperature and high-mobility InGaZnO thin-film transistor on flexible substrate. To gain both high gate capacitance and low leakage current, we adopt stacked dielectric of Y₂O₃/TiO₂/Y₂O₃. This flexible IGZO TFT shows a low threshold voltage of 0.45 V, a small sub-threshold swing of 0.16 V/decade and very high field-effect mobility of 40 cm²/V. Such good performance is mainly contributed by improved gate stack structure and thickness modulation of IGZO channel that reduce the interface trap density without apparent mobility degradation.