激光二极管抽运的GaAs被动Q开关Nd：YVO4激光器

利用固体可饱和吸收体砷化镓（GaAs）作为被动调Q元件，实现了激光二极管抽运平－凹腔掺钕钒酸钇（Nd:YVO4）激光调Q运转，详细测量了砷化镓被动调QNd:YVO4激光输出特性，获得脉宽15ns，重复频率470kHz，光束质量M^2=1.31的激光输出，调Q激光运转阈值为500mW，并数值求解了砷化镓被动调Q速率方程，讨论了被动调Q机理以及调Q脉冲宽度和脉冲重复频率对抽运速率的依赖关系，理论计算结果与实验结果相一致。     

10-GHz Optical Comb in L-Band Region With Brillouin/Erbium-Doped Fibre Laser

A multiwavelength Brillouin/erbium fibre laser (BEFL) which operates in the long wavelength (L-band) region is demonstrated for potential applications in an L-band wavelength division multiplexing (WDM) communication system. The laser configuration consists of a long erbium-doped fibre to enable L-band amplification where two 3-dB couplers take a portion of the generated BEFL signal and re-inject it into the single mode fibre to seed a cascaded BEFL line in the same direction as the first BEFL line. A stable and strong laser comb of up to five lines with 10-GHz spacing has been obtained with a Brillouin pump (BP) of 9.2 mW and a 980 nm pump of 92 mW. The BEFL has shown a broad tuning range with a tuning characteristic for line #1 which is flat over a range greater than 9.9 nm.     

Precise measurement of hyperfine structure in the state of Rb

We demonstrate a technique to measure hyperfine structure using a frequency-stabilized diode laser and an acousto-optic modulator locked to the frequency difference between two hyperfine peaks. We use this technique to measure hyperfine intervals in the 5 P _3/2 state of ⁸⁵Rb and obtain a precision of 20 kHz. We extract values for the magnetic-dipole coupling constant A = 25.038(5) MHz and the electric-quadrupole coupling constant B = 26.011(22) MHz. These values are a significant improvement over previous results. Received 6 March 2003 Published online 15 April 2003     

多棒串接固体激光器谐振腔的研究

运用矩阵光学的方法对多棒串接固体激光器的谐振腔参数及其在平平腔时的热稳条件进行了研究，并计算了六棒串接平平腔固体激光器的稳定区.结果证明：多棒串接固体激光器的稳定区和非稳区相互间隔，在平平腔总腔长、激光棒数量n和棒间距L一定的条件下，当采用对称结构时(L₁=L₂)，则谐振腔的每段稳定区均达到最大；且只要 平平腔满足L₁=L₂=L/2以及热焦距f在大于某个下限值f_m时，稳定性条件01< 关键词： 多棒串接固体激光器 稳定区 热稳条件     

类锂铝复合机制产生X光激光的等离子体状态

本文从速率方程出发,讨论了类锂铝复合等离子体的激发态结构,衰减常数,反转率和小信号增益等表征介质增益特性的物理量以及它们随电子温度,电子密度和光子逃逸几率的变化。找到了进行类锂铝离子通过复合机制产生X光激光设计应创造的等离子体状态目标区域。还讨论了这些物理量随原子序数变化的定标律。     

Assignments of methanol laser lines by frequency measurements and Fourier transform spectroscopy

We have measured the frequencies of four CH₃OH far-infrared laser lines that were previously known only by wavelength measurement. Two of these lines turned out to be doublets, bringing the total number of measured lines to six. We can now confirm the assignments of five of them and definitely disprove the assignments proposed for the sixth.In particular we confirm the assignments for the four strong laser lines at 205 and 208 µm pumped by the 9-P(34) CO₂ laser line. These lines share a common upper level in the first excited CO-stretch state, and terminate in the upper and lower levels of a hybrid state with J=5. Heterodyne frequency measurements and conventional microwave spectroscopy show that both lines are split into two components approximately 3.5 MHz apart. The origin of this further splitting is interpreted as a perturbed K-splitting.Work supported by Consiglio Nazionale delle Ricerche -Italia     

闪光灯泵浦的Nd:KGd(WO4)2激光器

报道了用闪光灯泵浦的掺钕的钨酸钆镓(Nd³⁺:KGd(WO₄)₂激光器.在重复频率1Hz,脉宽120μs的灯泵下,测量了不同透过率下激光输出能量,获得最大输出能量384mJ,斜率效率1.0%,外推阈值0.54J.在调Q运行时,Nd:KGW晶体的斜率效率为0.16%,最大输出能量46mJ.     

Analysis of Threshold Current and Wall-Plug Efficiency of Diode Lasers with Asymmetric Facet Reflectivity

Threshold current and differential quantum efficiency of broad contact lasers with asymmetric facet reflectivity are discussed with the purpose to reveal factors essential for optimisation of the wall-plug efficiency of such lasers. Lasers with low front facet reflectivity and short cavity often exhibit behaviour difficult to explain with a classical theory. More rigorous calculation performed in this work show that differential quantum efficiency is indeed less affected by a change of the front facet reflectivity or cavity length than predicted by such theory. These findings greatly simplify criteria for optimisation of the wall-plug efficiency of broad contact lasers with coated facets.     

Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode

Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/ GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications.     

The role of OH ions in the stabilization of F colour centres in LiF

Thermally Stimulated Depolarisation Current (TSDC) and optical methods are applied to a range of alkali-fluoride crystals in order to establish a model for the stable F ₂ ⁺ - like colour centres in LiF:OH^-. The experimental results for LiF:OH^- suggest that the OH^- defects are partially destroyed under ionising irradiation or during crystal growth. The low-temperature dielectric relaxation signals in LiF:OH^- and LiF:Mg²⁺,OH^- are attributed to highly interacting hydroxide ions and products of their destruction located in extended lattice defects. In LiF:OH^-, in contrast to other alkali halides, the results advocate for a defect-structure model, which considers a neutral defect (ND, probably O₂ or H₂) sited at the anion vacancy of the O^2--V _a ⁺ dipole and which possibly is the “nucleus” for the F ₂ ⁺ centre. The proposed F ₂ ⁺ (ND, O^-) model seems to better explain the dielectric results, compared to the older F ₂ ⁺ (O^2-) and F ₂ ⁺ (O^-) models. The estimate for the electric dipole moment derived from the experimental TSDC bands, gives a value for the F ₂ ⁺ - like centre in LiF:OH^- between those of the F ₂ ⁺ (O^-) and F ₂ ⁺ (O^2-) defects, in good agreement with the proposed F ₂ ⁺ (ND,O^-) model. The reduction of the activation energy barrier of the (re)orientation process of the Mg²⁺V _c ^- (OH^-) complexes in LiF:Mg²⁺,OH^-, and the low-temperature shift of their TSDC band, compared to the single Mg ₂ ⁺ V _c ^- peak in LiF:Mg²⁺, are tentatively ascribed to an increase in the crystal-lattice parameters owing to the presence of OH^- and/or products of its destruction. Received 31 August 2001 / Received in final form 30 March 2002 Published online 9 July 2002