Extremely large binding energy of biexcitons in an organic-inorganic quantum-well material (C4H9NH3)2PbBr4

We have confirmed biexciton formation in an organic-inorganic hybrid quantum-well material (C₄H₉NH₃)₂PbBr₄ by photoluminescence and two-photon absorption measurements. The biexciton has extremely large binding energy, 60 meV, which to our knowledge is the largest value ever reported for a semiconductor. By analyzing the spectrum of biexciton luminescence, the biexciton gas temperature was found to be much higher than the bath temperature due to a higher local temperature arising from the large biexciton binding energy.     

Magneto-Optical Measurement of Organic Conductor Using Rotational Cavity System

We have developed a new magneto-optical measurement system using a rotational cavity system equipped with a millimeter vector network analyzer and a 14 T solenoid type super conducting magnet. The measurement can be performed in the transmission configuration down to 1.6 K. The results of the precise angular dependence measurement of quasi-one-dimensional organic conductor (DMET)₂I₃ using the new system are shown, and its Fermi surface will be discussed in connection with the previous reports.     

Optical and conductive properties of AlSi-alloy/SiCp composites: application in modelling CO2 laser processing of composites

The optical properties—reflectivity, real part of the refractive index, absorption coefficient as well as the thermal and electrical conductivity of AlSi-alloy/SiC_p composite were measured. The optical parameters and both conductivities decreased with the increase of SiC_p particles volume in AlSi-alloy matrix. This decrease was almost linear for the volume fraction of SiC_p particle up to 10 vol% of the total mass of the composite. For the 15 vol% of SiC_p particles, the departure from linearity is connected with the presence of additional phases in AlSi-alloy/SiC_p composite materials. The measured temperature dependencies of optical reflectivity and electrical conductivity for AlSi-alloy/SiC_p 15 vol% are of metallic character. Modelling of the interaction of the CO₂ laser radiation with AlSi-alloy/SiC_p 15 vol% composite should allow to estimate the initiation time at which the surface composite reaches melting temperature.     

Structure and optical properties of lead iodide based two-dimensional perovskite compounds containing fluorophenethylamines

Phenethylammonium-based perovskites, which can be regarded as a semiconductor/insulator multiple quantum well consisting of lead halide semiconductor layers sandwiched between phenethylammonium insulator layers were prepared. To investigate the effects of the electronic state and the orientation of organic insulator layers on the optical properties of layered perovskites, fluorine substituted analogues were also prepared. The structure and optical properties were investigated by the XRD, UV–Vis absorption, and fluorescence measurements. The exciton absorption peak was shifted by the substitution of fluorine atoms in organic ammonium compounds. It became clear that the optical properties of two-dimensional perovskite compounds were controlled by the substitution of fluorine atoms.     

A structured light-based system for human heads

The 3-D modeling of heads by using optical triangulation techniques is of great interest in the context of virtual reality, telecommunication and computer animation. This paper presents a structured light-based system mainly for human heads. It is named “3-D Laser Color Scanner” (3DLCS). A 3-D model is obtained with a cylindrical scan. The laser beam is switched on and off using a “light valve” and two successive CCD frames are captured, one with the laser line showing and one without. We can simplify the laser line extracting by subtracting these two images.In this system, two CCD cameras are used to avoid occlusion problems. Color information is read from the CCD when the laser light is absent. Since traditional laser scanner will miss the range data in the low-reflectance areas such as the hair area of human head, a shape from silhouette algorithm is presented to overcome this problem. Finally, we give some results using our system. The resulting model is suitable for many applications.     

Absorption measurement of strained SiGe nanostructures deposited by UHV-CVD

In order to obtain a low band gap photocell based on the widely spread silicon technology, e.g. for thermophotovoltaics, SiGe nanostructures can be introduced into a monocrystalline silicon photocell. Beforehand, it is necessary to know the absorption coefficient of the SiGe quantum wells. On a silicon (1 0 0) substrate multiple Si/SiGe quantum well structures were grown by UHV-CVD. The Ge concentration and the well width were used as growth parameters. To obtain significant absorption, the experiment was set up to allow for 200 internal reflections.The total reflection of the light results in a standing electromagnetic wave. The absorption coefficient was obtained from the experimental data taking the geometry and the electric field distribution in the absorbing layer into account. The influence of well width and germanium content on the absorption was investigated with the goal of maximizing the absorption for photons with energies below the band gap energy of silicon. The measurement results are compared with a theoretical model, which takes the band structure of strained SiGe including confinement effects into account.     

Novel optical film sensor design based on p-polarized reflectance

A new scheme of optical film sensor is presented. The sensor is based on p-polarized reflectance, consisting of a sensing coated substrate, is easily optimized for maximum sensitivity in different applications. The resolutions of refractive index n_f, extinction coefficient k_f and thickness h_f of the sensitive films are predicted to be 10⁻⁷, 10⁻⁵ and 10⁻³ nm, respectively. Experimentally, we selected the sol–gel derived SnO₂ films as gas-sensitive films and conducted preliminary gas-sensing test. The results indicate that novel optical film sensor scheme has higher sensitivity, and the detection sensitivity is available to 10⁻¹ ppm on the condition of optimum optical parameters and incident angle.     

Measurement of wire diameter by optical diffraction

A combined interference and diffraction pattern, in the form of equidistant interference fringes, resulting from illuminating a vertical metallic wire by a laser beam is analyzed to measure the diameter of four standard wires. The diameters range from 170 to 450 μm. It is found that the error in the diameter measurements increases for small metallic wires and for small distances between the wire and the screen due to scattering effects. The intensity of the incident laser beam was controlled by a pair of sheet polaroids to minimize the scattered radiation. The used technique is highly sensitive, but requires controlled environmental conditions and absence of vibration effects. The expanded uncertainty for k=2 is calculated and found to decrease from U(D)=±1.45 μm for the wire of nominal diameter 170 μm to ±0.57 μm for the diameter 450 μm.     

基于有限差分光束传播法的过渡波导功耗分析

为了在既定尺寸下减小斜坡波导和弯曲波导的功耗，设计了4种过渡波导形状函数。用有限差分光束传播法(FD-BPM)进行了模拟分析，发现过渡波导形状的选取与坡度和曲折角存在条件有关，并给出了条件表达式及其详细说明。     

PECVDSiON薄膜的工艺控制,性质及其潜在应用

研究了等离子增强化学气相淀积氮氧化硅薄膜的工艺控制、性质以及薄膜波导在超大规模集成电路光互连中的潜在应用。