Ce掺杂CrSi2电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,对未掺杂及Ce掺杂CrSi2的电子结构和光学性质进行理论计算。计算结果表明,未掺杂CrSi2是间接带隙半导体,其禁带宽度为0.392 eV,掺杂Ce元素,仍然是间接半导体,带隙宽度下降为0.031eV。未掺杂CrSi2在费米能级附近主要由Cr-5d、Si-3p态贡献。Ce掺杂后在费米能级附近主要由Cr-5d轨道,Ce-4f轨道,C-2p,Si-3p轨道贡献,掺杂后电导率提高。未掺杂CrSi2有两个介电峰,掺杂后,只有一个介电峰。未掺杂CrSi2,在能量为6.008处吸收系数达到最大值,掺杂后在能量为5.009eV处,吸收系数达到最大值。     

Optical absorption spectrum of Ni2+ doped in ammonium zinc sulphate

The optical absorption spectrum of Ni²⁺ ion doped in ammonium zinc sulphate has been studied at room and liquid air temperatures. From the nature and the positions of the bands a successful interpretation of all the bands could be made assumingO _h symmetry for the Ni²⁺ ion in the crystal. The fine splitting of the³ T ₁ ¹ band at liquid air temperature has been successfully interpreted to be due to spin-orbit interaction. The crystal field and spin-orbit parameters derived areDq=1000 cm⁻¹;B=750 cm⁻¹;C=3.45B andξ=600 cm⁻¹.     

检测输油管道实际油垢样品的实验研究

在石蜡实验基础上,本工作运用γ射线散射法检测油垢样品进行对比实验研究,并在进一步的实验研究中探讨康普顿散射光子数与油垢样品厚度之间的线性关系．发现放射源与油垢样品之间的距离与提高线性度有很大关系．本实验测得最佳线性相关系数平方值为0．9871,测量精度为0．671mm．     

The hydrogen molecule in an arbitrarily oriented magnetic field

Summary The modifications induced by a magnetic field of arbitrary direction and intermediate strength (i.e not larger than 2.35·10⁵ tesla, the ?atomic tesla?) on the lowest singlet and triplet energy states of the hydrogen molecule are studied. Using a linear combination of products of field-modified atomic orbitals, it is found that increasing the field strength the depth of the singlet energy well increases and the equilibrium internuclear distance decreases, yielding more rigid and localized nuclear vibrations. For sufficiently strong fields perpendicular to the internuclear axis, the triplet state exhibits a bonding behaviour. An explanation of the above results is given in terms of the field-modified electronic-charge distributions in the internuclear region. Based on the thesis submitted by S. Basile to the University of Palermo for graduation in Physics.     

光学材料热光系数的精确测量——“热光系数仪”

本文介绍用于光学材料系数精确测量的“热光系数仪”。该仪器采用两种干涉仪组合、微机控制和数据采集处理等设计方案,实现了高精度测量。低温区热膨胀系数α、折射率温度系数β热光系数W的测量精度可达±3×10~(-7)°C~(-1)。     

Infra-red properties of bulk heavily doped silicon

Summary In this work reflectance (R) and thermoreflectance (TR) spectra in the infra-red of bulk P and B heavily doped silicon samples are reported and discussed. The values of the scattering time and of the effective mass, as well as the temperature derivative of the plasma frequency, scattering time and high-frequency dielectric constant are extracted from the data and analysed in terms of free-carrier-photon and free-carrier-impurity interaction.

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Riassunto In questo lavoro sono riportati e discussi gli spettri di riflettanza (R) e termoriflettanza (TR) in infrarosso di campioni di silicio drogati pesantemente per diffusione con P e B. Dai dati sono ricavati i valori dei tempi di rilassamento e della massa effettiva, come pure la derivata in temperatura della frequenza di plasma, del tempo di rilassamento e della costante dielettrica ad alta frequenza, che sono analizzati sulla base delle interazioni fra portatori liberi e fononi e fra portatori liberi e impurezze.

     

基于发光二极管探测器的太阳光度计的研究

介绍了一种采用商用发光二极管作为探测器的新型太阳光度计。阐述了系统的结构以及该仪器在监测气溶胶光学厚度领域的应用,并与传统的太阳光度计进行了对比试验。试验表明,两种仪器具有很好的一致性。     

500.8 nmNd∶YAG青光激光器光学薄膜的设计与制备

从双波长激光运转及和频的机理出发，对LD泵浦Nd∶YAG，LBO腔内和频500.8 nm〖JP2〗青光激光器所使用的光学薄膜进行了设计和制备.在激光反射镜的设计上，为了达到最佳的和频输出，对膜系要求进行了深入分析.采用对谐振腔一端面反射率固定不变并通过对另一腔镜基频光的透射率进行调谐的方法, 在给出合理初始结构后，利用计算机对膜厚进行了优化.并采用双离子束溅射沉积的方法，通过时间监控膜厚法成功制备出青光激光器所使用的全介质激光反射膜, 在室温下实现946 nm和1064 nm双波长连续运转，并通过Ⅰ类临界相位匹配LBO晶体腔内和频在国内首次实现500.8 nm青色激光连续输出.当泵浦注入功率为1.4 W时和频青光最大输出达20 mW.     

用于光纤电流传感器的BGO晶体磁光特性研究

在理论分析Bi4Ge3O12（BGO）晶体磁光特性的基础上,利用倍频法测量了不同工作波长下BGO晶体的费尔德常量,获得了与理论相符的实验结果.同时根据BGO晶体费尔德常量随波长的变化关系曲线,通过对该晶体吸收系数的测量,得出了其磁光优值曲线.进而将BGO晶体的磁光特性与光纤电流传感器常用的几种磁光材料作了对比,结果表明BGO晶体适合用于光纤电流传感器.     

单轴分布式光纤传感器管线泄漏探测方法及定位理论分析

利用Sagnac干涉原理的分布式光纤传感器是一种可用于长途油气管线侵入、泄漏探测和定位的新技术.为了克服屏蔽和隔离Sagnac光纤环中未用作传感的那一半光纤所带来的屏蔽困难、成本增加等问题,提出一种单轴分布式光纤传感器的方法.其原理是利用一条光纤代替光纤环,并在光纤尾端设置法拉第旋转镜,构成偏振无关Sagnac干涉仪探测和定位管线泄漏.文中详细分析和讨论了该方法的系统光路和探测定位原理.