用楔形柱面光纤微透镜耦合的1.3μm SOA组件

运用激光模式耦合理论分析了半导体光放大器(SOA)与单模通信光纤的连接损耗,并设计制作了楔形柱面光纤微透镜用来实现两者的模斑匹配,有效地降低了器件的光耦合损耗.本文介绍了楔形柱面光纤微透镜耦合的1.3 μm半导体光放大器(SOA)组件及其制作方法.该组件的最大增益不小于14 dB,其偏振灵敏度小于1 dB,增益波动不大于0.5 dB.     

开式单喷嘴喷雾冷却均匀性实验研究

针对高热流密度激光介质高效散热与均匀冷却技术需求,设计并搭建了以去离子水为冷却工质的开式单喷嘴喷雾冷却实验平台,实验研究获得了不同热流密度（16～110 W/cm²）、不同冷却工质流量（200～300 mL/min）以及不同喷雾高度（15～25 mm）下单相喷雾冷却换热系数及其冷却均匀性效果。结果表明：该实验工况下,不同热流密度条件下喷雾高度及工质流量对于单相喷雾冷却换热效率及温度均匀性影响显著;喷雾高度15 mm、工质流量200 mL/min时获得最大对流换热系数为5.93 W/（cm²·K）;喷雾高度15 mm、工质流量250 mL/min时面积20 mm×20 mm的热源表面温度均匀性最佳可优于0.6 ℃。     

静止轨道高光谱海洋水色仪光学系统设计

设计了由超大口径前置望远系统和超大视场光谱仪组成的超大口径高光谱海洋水色仪.前置望远系统采用同轴三反光学系统结构,口径为4 m,视场为0.64°,焦距为21.6 m,波段范围为400~1 000nm.超大视场光谱仪采用改进的Offner结构,视场为240mm,光谱分辨率为10nm.探测器像元尺寸为15μm×15μm,4片探测器交错拼接实现400km幅宽.超大视场光谱仪在400~1 000nm的宽波段内,点列图半径的均方根值均小于3.9μm,静止轨道高光谱海洋水色仪全系统不同波长的MTF在33.3lp/mm处大于0.52,各项指标均满足应用要求.     

喷流冷却复合陶瓷薄片激光器的热特性仿真分析及实验研究

为分析喷流冷却复合陶瓷薄片激光器的热特性,设计用于冷却复合陶瓷薄片的喷流冷却系统.利用湍流换热理论和计算流体动力学仿真方法建立喷流冷却复合陶瓷薄片激光器的流固耦合热仿真模型,定义评价其冷却能力和冷却均匀性的定量参数.根据该仿真模型得到喷流冷却系统的最优设计参数,并进行实验验证.使用163孔喷板,流量为0.2kg/s,入口温度为20℃,在1200 W泵浦时获得359 W激光输出功率,并测得复合陶瓷薄片上表面的最高温度为92℃.激光输出功率与复合陶瓷薄片上表面温度均与泵浦功率呈近似正线性关系,且温度的实验值与仿真值相符度较高.     

压缩系数可控的光脉冲压缩器

提出了一种压缩系数可控的光脉冲压缩器.该脉冲压缩器主体包括梳状色散分布光纤（CDPF）和喇曼放大器两部分.梳状色散分布光纤由多段色散位移光纤和单模光纤拼接而成,具有喇曼增益介质的功能.对一给定的光脉冲序列,可以通过控制泵浦功率实现脉冲压缩器的压缩率可调.通过对非线性薛定锷方程的数值模拟,这一光脉冲压缩器的性能得到了验证.当光脉冲在CDPF中传输时,脉冲得到压缩并且被放大.对喇曼泵浦功率来改变可以得到不同的输出脉宽.通过优化CDPF的结构,得到了喇曼泵浦功率和压缩系数之间很好的线性关系.     

Influence of solvent on solution processed Cu2ZnSnS4 nanocrystals and annealing induced changes in the optical,structural properties of CZTS film

The well-known quaternary Cu₂ZnSnS₄ (CZTS) chalcogenide thin films are playing an important role in modern technology. The CZTS nanocrystal were successfully prepared by solution method using water, ethylene glycol and ethylenediamine as different solvent. The pure phase material was used for thin film coating by thermal evaporation method. The prepared CZTS thin films were characterized by XRD, Raman spectroscopy, FESEM, XPS and FT-IR spectroscopy. The XRD and Raman spectroscopy analysis revealed the formation of polycrystalline CZTS thin film with tetragonal crystal structure after annealing at 450 ^°C. The oxidation state of the annealed film was studied by XPS. A direct band gap about 1.36 eV was estimated for the film from FT-IR studies, which is nearly close to the optimum value of band gap energy of CZTS materials for best solar cell efficiency. The CZTS annealed thin films are more suitable for using as a p-type absorber layer in a low-cost solar cell.     

Ground state cooling of magnomechanical resonator in PT-symmetric cavity magnomechanical system at room temperature

We propose to realize the ground state cooling of magnomechanical resonator in a parity–time (PT)-symmetric cavity magnomechanical system composed of a loss ferromagnetic sphere and a gain microwave cavity. In the scheme, the magnomechanical resonator can be cooled close to its ground state via the magnomechanical interaction, and it is found that the cooling effect in PT-symmetric system is much higher than that in non-PT-symmetric system. Resorting to the magnetic force noise spectrum, we investigate the final mean phonon number with experimentally feasible parameters and find surprisingly that the ground state cooling of magnomechanical resonator can be directly achieved at room temperature. Furthermore, we also illustrate that the ground state cooling can be flexibly controlled via the external magnetic field.     

Slow quenching for a one-dimensional kinetic Ising model: Residual energy and domain growth

A one-dimensional kinetic Ising model with Glauber dynamics subjected to a slow continuous quench to zero temperature is studied. For a rather general class of cooling schemes, described by a time-dependent temperatureT(t), the mean domain sizeL(t) is calculated along with the residual energye _res (r) as a function of the cooling rater. If the attempt frequency =₀ exp(–/kT), entering into the transition rates, is temperature dependent (i.e., the barrier is non-zero), the asymptotic growth ofL(t) is given byL()–L(t)~exp[–/kT(t)]. For this case the residual energy exhibits a power-law behaviore _res(r) ~r ^{/2(1 + )} forr small, where =4J/ andJ is the nearest neighbor coupling constant. For =0 and for certain cooling schemes the residual energy is zero andL(t)~t1/2, independent ofr.     

Ce掺杂6H-SiC电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,对未掺杂及Ce掺杂6H-SiC的电子结构和光学性质进行理论计算.计算结果表明,未掺杂6H-SiC是间接带隙半导体,其禁带宽度为2.045 eV,掺杂Ce元素,带隙宽度下降为0.812 eV.未掺杂6H-SiC在价带的低能区,Si-3s、C-2s电子轨道对态密度的贡献较大,在价带的高能区,主要是由Si-3p、Si-3s、C-2p态组成.掺杂后Ce原子的4f轨道主要贡献在导带部分,掺杂后电导率提高.未掺杂时,只有一个介电峰,是价带电子跃迁到导带电子所致,掺杂后有两个介电峰,第一个介电峰是由于导带电子跃迁到Ce原子4f轨道上产生,第二个峰是价带电子向导带电子跃迁产生.未掺杂6H-SiC,在能量为10.31 eV处吸收系数达到最大值,掺杂后在能量为6.57 eV处,吸收系数达到最大值.