偏振分束器对光学电流传感器稳定性的影响

采用偏振光学理论,详细分析了光学电流传感器中偏振分束器消光比的变化对传感器性能的影响,得到了偏振分束器消光比与传感器输出的关系式,并用系统实验进行了验证.理论及实验结果的吻合证明了光学电流传感器稳定性直接受偏振分束器两路消光比影响的结论.     

Three terminals optoelectronics devices integrated into a silicon on silicon waveguide

In this paper we describe two different kind of optoelectronic devices both based on a three terminals active device and exploit the plasma dispersion effect to achieve the desired working. The first device exploits this effect in order to obtain an optical modulation. The second device is an optoelectronic router based on the mode-mixing principle together with the injection-induced optical phase shift. Both devices are integrated into a Silicon on Silicon optical channel waveguide which can be realized using a standard bipolar process. The possibility of using standard, well-known technology presents several advantages with respect to III–V Optoelectronics. The active three terminal device used is a Bipolar Mode Field Effect Transistor (BMFET). Numerical simulation results are presented on both devices.     

Paper I: The use of measurement-time dependent single-aliquot equivalent-dose estimates from quartz in the identification of incomplete signal resetting

The identification of incomplete signal re-setting of optically stimulated luminescence signals in sedimentary quartz is a vitally important step in the continued improvement of optical dating. It is shown that narrow spectrum (blue-green) laboratory partial bleaching of aliquots of natural sedimentary quartz has a significant effect on equivalent dose (measured using a single aliquot procedure) calculated as a function of measurement time (D_e(t)). The blue-green stimulation spectrum mimics that found underwater and the results suggest that incomplete re-setting of waterlain sediments may be possible using the D_e(t) method.     

光突发交换的交换控制策略和光缓存配置

光突发交换是面向下一代互联网的光交换模式.讨论了异步光突发交换系统的交换控制策略以及相应光缓存的优化配置策略.除了传统预约模式的交换策略,还研究了非预约和改进型预约模式,它们的性能评估由计算机仿真给出.结果表明:在条件相当情况下,改进型预约模式具有最低的丢包率.同时光缓存的配置对上述几类交换控制策略的性能都有很大影响,仿真结果指出:光缓存的粒度对系统性能具有重要影响,所讨论的几类交换模式都存在最佳时延粒度,研究结果对光交换矩阵的设计有指导意义.     

Absorption and propagation of light in quaterthiophene crystals

We examine absorption of light in quaterthiophene crystals for different directions of the ray and wave-normal vector after refraction on the vacuum/crystal interface. Experimental non-normal incidence spectra are reported where different absorption bands show different behaviour as a function of the angle of incidence. This allows to identify those originating from the b_u Frenkel exciton state.     

Optical absorption spectra of linear and cyclic thiophenes—selection rules manifestation

We theoretically study the size-dependent relation between absorption spectra of thiophene-based oligomers and the corresponding cyclothiophenes. In our approach based on a Frenkel exciton Hamiltonian, we demonstrate that the geometry and selection rules determine the observed relations between the spectra.     

New insights on amorphous silicon-nitride microcavities

All amorphous silicon-nitride planar optical microcavities operating in the visible range have been grown by plasma enhanced chemical vapor deposition. The luminescence intensity of the N-rich silicon-nitride layer from a microcavity with 6 period distributed Bragg reflectors (DBRs) is two order of magnitude higher than that of the luminescent layer without the cavity. Moreover, a strong directionality of the microcavities emission can be observed. Such results can be ascribed to the anisotropic optical density of states induced in the Fabry–Perot structure. The quality factors of the resonators are strictly correlated to the number of periods of the DBRs.     

A tight-binding study of LUMO states in ellipsoidal silicon nanocrystals

In this paper we report on tight-binding calculations of lowest unoccupied molecular orbitals states for silicon ellipsoidal nanocrystals. The electronic structure has been calculated for different nanocrystal shapes either keeping constant or varying the number of silicon atoms. We have found that changing the ellipsoid aspect ratio a non-obvious energy level structure is obtained. The implications for the infrared optical transitions and their relationship with the polarization of the radiation involved are discussed.     

Electron spin lifetimes in Hg0.78Cd0.22 Te and InSb

We have made direct pump–probe measurements of spin lifetimes in long wavelength narrow-gap semiconductors at wavelengths between 4 and 10 μm and from 4 to 300 K. In particular, we measure remarkably long spin lifetimes, τ_s300 ps, even at 300 K for epilayers of degenerate n-type InSb. In this material the mobility is approximately constant between 77 and 300 K, and we find that τ_s is approximately constant in this temperature range. In order to determine the dominant spin relaxation mechanism we have investigated the temperature dependence of τ_s in non-degenerate lightly n-type Hg_0.78Cd_0.22Te of approximately the same band gap as InSb, and find that τ_s varies from 356 ps at 150 K to 24 ps at 300 K. Our results, both in magnitude and temperature dependence of τ_s, imply that the Elliott–Yafet model dominates in these materials.     

光参量啁啾脉冲饱和放大的增益稳定性

 光参量啁啾脉冲放大（OPCPA）在饱和放大区存在一个增益稳定点，据此设计了一个输出稳定的三级OPCPA系统；第一、二、三级分别选用准相位匹配的周期极化钛氧磷酸钾（PPKTP）晶体、LBO晶体和KDP晶体作为增益介质。饱和放大时，增益随泵浦光强度变化时的增益输出稳定性明显改善，在泵浦光强度抖动低于6%的情况下，各级光参量放大器OPA输出的增益抖动小于1%。前级采用准相位匹配的PPKTP晶体作为增益介质，在远低于破坏阈值的30MW/cm²的泵浦功率密度下，可得到2×10⁵的饱和放大增益和20%的能量转换效率。