用于全光缓存的光阈值门理论和实验研究

提出了一种基于光阈值门的全光缓存方案,采用两个非对称的SOA环形腔激光器耦合构成光阈值门,其输出光可以在两种波长上切换,可控制波长转换器实现光包路由,从而将需缓存的数据包路由到缓存端口,避免了复杂的包头处理.建立了光阈值门的理论模型,对10 Gbit/s的光阈值门的动态特性进行了数值模拟和实验研究,实验结果和理论计算结果相符合,实验也表明光阈值门两种输出状态的消光比可达30dB.     

Impact of thermal annealing on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

A study on impact of post-deposition thermal annealing on the physical properties of CdTe thin films is undertaken in this paper. The thin films of thickness 500 nm were grown on ITO and glass substrates employing thermal vacuum evaporation followed by post-deposition thermal annealing in air atmosphere within low temperature range 150–350 °C. These films were subjected to the XRD, UV‐Vis NIR spectrophotometer, source meter, SEM coupled with EDS and AFM for structural, optical, electrical and surface topographical analysis respectively. The diffraction patterns reveal that the films are having zinc-blende cubic structure with preferred orientation along (111) and polycrystalline in nature. The crystallographic parameters are calculated and discussed in detail. The optical band gap is found in the range 1.48–1.64 eV and observed to decrease with thermal annealing. The current–voltage characteristics show that the CdTe films exhibit linear ohmic behavior. The SEM studies show that the as-grown films are homogeneous, uniform and free from defects. The AFM studies reveal that the surface roughness of films is observed to increase with annealing. The experimental results reveal that the thermal annealing has significant impact on the physical properties of CdTe thin films and may be used as absorber layer to the CdTe/CdS thin films solar cells.     

Study of electronic and optical properties of two-layered hydrogenated aluminum nitrate nanosheet

First principle calculations based on density functional theory using GW approximation and two particle Bethe–Salpeter equation with electron-hole effect were performed to investigate electronic structure and optical properties of two-layered hydrogenated AlN. According to many body green function due to decrease in dimension and considering electron-electron effect, direct (indirect) band gap change from 2 (1.01) eV to 4.83 (3.62) eV. The first peak in imaginary part of dielectric function was observed in parallel direction to a plane obtaining 3.4 was achieved by bound exciton states possess 1.39 eV. The first absorption peak was seen in two parallel and perpendicular directions to a plane which are in UV region.     

里兹方法在光波导理论中的应用

本文讨论了在三层平板介质波导中TE波的传播问题.三层平板的芯区由Kerr介质构成,其折射率平方(n²)的剖面分布随x作抛物分布变化.本文将应用变分法中的里兹方法,求出亥姆霍兹方程的第一级近似的解析解.     

一种新颖的涂层光纤传感器

作者提出一种新型的涂层光纤传感器,传感头是在裸光纤外周涂以SnO₂薄层。理论推知,它对还原性液体敏感。对甲醇溶液浓度进行测量的结果与理论预期相符。测量范围为0～90%体积浓度。分辨率为1.3%体积浓度。     

主链光学活性1-庚烯-一氧化碳共聚物合成与表征

在阳离子钯 配体催化剂的存在下 ,烯烃与一氧化碳 (ＣＯ)交替共聚形成聚酮 ,这是一类非常有用的新材料 ,引起了广泛的关注[1] .合成聚酮有两种引发方式 :自由基引发共聚和过渡金属引发共聚 .在高的温度和压力下 ,用两种方式都可以得到聚酮 ,但其中的一氧化碳含量却随一氧化碳的分压变化[2 ] .随后发现了中性膦 钯催化剂[3 ] ,可在较温和的条件下实施一氧化碳与丙烯的交替共聚 ,且其一氧化碳含量不随一氧化碳分压变化 .高效催化剂主要有三部分组成 ,阳离子钯、弱或非配位的阴离子[4 ] 以及二齿膦或二氮配体[5] .一氧化碳插入过渡金属 碳σ 键…     

非均匀螺旋相位调制下对称破缺角向偏振光束的聚焦特性

提出了一种多参量调控角向偏振光束焦场强度和横向能流的方法.基于矢量衍射积分理论,数值模拟了非均匀螺旋相位和旋转对称振幅挡板调制下角向偏振光束的聚焦特性,讨论了螺旋相位结构和对称振幅挡板联合调制下,角向偏振光束焦场横向能流和偏振态的分布.结果表明:非均匀螺旋相位的引入改变了光场的聚焦特性,导致聚焦场重心产生了偏移;在偶数重旋转对称振幅挡板的联合调制下,焦场中出现了局部的椭圆偏振态和圆偏振态,且焦平面上出现了横向能流;通过调节螺旋相位,不仅可以实现焦场重心的特殊控制,还能进一步丰富焦场偏振态和横向能流分布.这种基于多参量调控焦场强度和能流分布的方法为实现操控特定区域的粒子提供了新的思路.     

基于复合腔的波长可调谐连续橙红色激光器

设计并研制了一种基于复合腔结构的波长可调谐、瓦级连续输出的橙红色激光器.该激光器是由半导体激光侧泵Nd∶GdVO_4晶体产生p-偏振1 062.9nm基频光的谐振腔和使用周期性极化晶体MgO∶PPLN(三个极化周期为29.0μm、29.8μm和30.8μm)的单共振光学参量振荡器组成.在两个谐振腔的重叠区域,利用Ⅱ类临界相位匹配KTP晶体对s-偏振信号光与p-偏振1 062.9nm基频光进行腔内和频.通过对MgO∶PPLN晶体进行三个不同极化周期的调谐和30℃~200℃范围内的温度调谐,在三个波段(613.4~619.2nm@29.0μm、620.2~628.9nm@29.8μm和634.4~649.1nm@30.8μm)获得了波长可调谐的橙红色激光连续输出,并在相应波段(3 980.0~3 758.5nm@29.0μm、3 714.2~3 438.3nm@29.8μm和3 278.0~2 940.2nm@30.8μm)获得了波长可调谐的中红外闲频光的连续输出.在30℃最低调谐温度,通过改变晶体的极化周期,在613.4nm、620.2nm和634.4nm处测得最大连续输出功率分别为1.52 W、2.21 W和3.03 W,对应的三束闲频光最大连续输出功率分别为2.36 W@3 980.0nm、3.17 W@3 714.2nm和4.13 W@3 278.0nm.     

Linear and nonlinear intersubband optical absorption and refractive index changes of asymmetric double semi-parabolic quantum wells

The optical properties of the asymmetric double semi-parabolic quantum wells (DSPQWs) are investigated numerically for typical GaAs/Al_xGa_1−xAs. Optical properties are obtained using the compact density matrix approach. In this work, effects of the structure parameters such as the barrier width and the well widths on the optical properties of the asymmetric DSPQWs are investigated. The results show that the linear and nonlinear optical properties of asymmetric DSPQW are non-monotonic functions of these structure parameters. The behavior of the refractive index changes of asymmetric DSPQW with the variation of the barrier width is different substantially with that of symmetric DSPQW. Results reveal that the resonant peak values of the total absorption coefficient of asymmetric DSPQW is usually greater than that of symmetric DSPQW. Our calculations also show that the total absorption coefficient of asymmetric DSPQW is larger than that of asymmetric double square quantum well.     

基于U型弯曲光纤模间干涉的折射率传感

研究了去包层U型弯曲光纤的折射率传感特性.首先根据模间干涉理论,分析了U型光纤传感器的传感原理,指出干涉谱损耗峰波长与环境折射率和弯曲半径有关.利用单模光纤(SM-28)实验制作不同曲率半径的U型光纤传感器,把传感器的U型部分浸入不同折射率的液体中,研究其折射率传感特性.当U型光纤曲率半径为2.5~5.0mm时,传输光谱中均能观察到明显的模间干涉现象;当液体折射率从1.30RIU变到1.43RIU时,光谱损耗峰波长发生红移,且弯曲半径越大,折射率传感灵敏度越高;在曲率半径为5mm时灵敏度为207nm/RIU(折射率1.30~1.40RIU)和1 220nm/RIU(折射率1.40~1.42RIU).干涉峰的波形参量(半高宽、对比度)决定于包层模和纤芯导模之间的比例,当曲率半径为4mm时,损耗峰半高宽最小达3.2nm.综合半高宽和灵敏度两个参量,得出曲率半径4.5mm的U型光纤传感器品质因素最高,分别为43.1RIU-1(折射率1.30~1.40RIU)和191.2RIU-1(折射率1.40~1.42RIU),可直接由SM-28单模光纤制成,且制作工艺简单、成本低、机械强度高不需要任何特殊处理,具有很好的应用前景.