Recombination zone shift in phosphorescent white organic light-emitting devices with single host structure of multi-emission layers

We have investigated the recombination zone in the phosphorescent white organic light-emitting devices with single host structure of multi-emission layers. Blue, green, and orange-red phosphorescent emitters were doped into the separate layers of single host material for fabricating the white devices with multi-emission layers. The electroluminescence spectrum was substantially modified by the shift of the recombination zone that was dependent upon the thickness of the electron transport layer. We investigated the recombination zone shift in terms of electric field distribution and carrier injection. A maximum external quantum efficiency of 15.9% and a maximum power efficiency of 28.9 lm/W were achieved by optimizing the recombination zone.     

新型蒽衍生物蓝光材料的合成及光电性能研究

通过引入具有电子传输性能的噁二唑衍生物支链,采用Suzuki偶联反应,设计并合成了一种新型的蒽衍生物蓝光材料,同时研究了它的光学性能、热学性能、电化学性能以及成膜性。研究结果表明,该化合物在四氢呋喃溶液中发射蓝色荧光,最大发射波长为433 nm,其荧光量子效率为0.94,是9,10-二（β-萘基）蒽（ADN）的1.17倍。该化合物薄膜经过100 ℃高温烘烤3 h,依然保持连续、均一、平整的无定型结构,是制备长寿命、高效率OLED的很有潜力的材料。     

碳酸铯修饰Al作为反射阴极的倒置顶发射OLED器件

以Cs₂CO₃修饰的Al电极作为反射阴极制备了高效倒置顶发射结构有机电致发光器件(ITOLED)。以八羟基喹啉铝(Alq₃)作为发光层、MoO₃修饰的Ag为半透明阳极时,器件的开启电压为3.6 V,发光效率和功率效率分别达到9.8 cd/A和3.4 lm/W。研究结果表明,Al/Cs₂CO₃为反射阴极的器件性能明显高于使用Mg:Ag(4.2 V,8.6 cd/A,2.85 lm/W)和Al(5 V,5.5 cd/A,1.57 lm/W)作为反射阴极的倒置顶发射OLED器件。单电子器件研究结果证明,以Cs₂CO₃修饰的Al电极功函数明显低于Mg:Ag和Al电极,具有更好的电子注入效果。因此,除去微腔效应外,Al/Cs₂CO₃为反射电极的ITOLED器件性能的提高主要归因于Al/Cs₂CO₃阴极的有效电子注入。     

利用LiF/Al作为电极的有机电致发光器件

本文报道了利用LiF/Al作为负电极的有机电致发光器件,器件结构为ITO/TPD/Alq3/LiF/Al,LiF层的加入增强了电子注入,当其厚度为0.4nm时,器件的性能最好,与单层Al和Mg/Al电极的同类器件相比,此时器件的开启电压由Al电极时的4.3V和Mg/Al电极时的3.0V降低到了2.0V,器件的最大亮度分别由4000cd/m²、14000cd/m²提高到19600cd/m²,器件的发光效率也分别增加了5倍和2倍,达到2.66lm/W.     

Plasma treatment of the Mg:Ag/tris-(8-hydroxyquinoline) aluminum interface in OLEDs: effects on adhesion and performance

The adhesion of a Mg:Ag cathode to the tris-(8-hydroxyquinoline) aluminum (Alq₃) in organic light emitting devices (OLEDs) can be greatly enhanced by a remote plasma treatment of the Alq₃ layer using either air or N₂ prior to metal deposition. The altered surface properties which lead to increased sticking coefficients of Mg and Ag, as well as enhanced adhesion, are attributed to the introduction of new functional groups into the organic layer, as observed by X-ray photoelectron spectroscopy (XPS). The storage life of the plasma treated devices in air without any capping treatment, as judged by a visible deterioration of the cathode, was increased by approximately five to six times compared to untreated OLEDs. Current–voltage characteristics and EL efficiency, however, were shown to deteriorate for devices incorporating either an air or an N₂ plasma treated Alq₃ layer. For OLEDs subjected to short treatment times with an N₂ plasma, only a very slight increase in the turn-on voltage, of about 0.2 V, was observed. An investigation of black spot formation revealed that an air plasma treatment resulted in a five-fold decrease in the time required for 50% of the device to become non-emissive. N₂ treated devices on the other hand, developed black spots at a comparable rate to the non-treated devices. Thus, a short N₂ plasma treatment of the Alq₃ layer prior to metal deposition improves the adhesion at the interface, thereby reducing the oxidation and degradation of the device through exposure to ambient conditions, particularly in storage.     

以蓝色发光材料DPVBi为基质的白色发光器件

白色有机发光器件是实现彩色平板显示的重要方案之一。利用蓝色发光材料DPVBi[4，4′—(2，2—苯乙烯基)—1，1′—联苯]掺杂红光染料DCJTB[4—氰甲烯基—2—叔丁基—6—(1，1，7，7—四甲基久洛尼定基—9—烯炔基—4H—吡喃)]作发光层制备了白色发光器件。研究了DPVBi掺杂不同浓度IDCJTB薄膜的光致发光性质，根据光致发光结果，制备了以DPVBi掺杂不同浓度DCJTB作发光层的电致发光器件，其结构为ITO／GuPc／NPB／DPVBi：DCJTB／Alq3／LiF／Al。当DCJTB质量分数为0．0008时，器件实现了白色发光(色度x=0．25，y=0．32)，电致发光和光致发光的掺杂比例基本相符，表明器件的白色发光主要是由基质DPVBi向掺杂剂DCJTB的能量传递产生的。研究还发现：白色器件随电压升高，光谱中蓝色成分相对于红色成分的比例略有增加，文章对此现象进行了分析。该白光器件在14V时达到最高亮度7822cd／cm^2，在20mA／cm^2电流密度下的亮度为-489cd／cm^2，最大流明效率为1．75lm／W。     

Blue organic light-emitting diodes with 2-methyl-9,10-bis(naphthalen-2-yl)anthracene as hole transport and emitting layer and the impedance spectroscopy analysis

2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN) based fluorescent blue organic light-emitting diodes (OLEDs) are demonstrated. With MADN as emitting layer, experiments indicate that thick MADN (40–60 nm) is preferable for constructing efficient blue OLED. With MADN as hole-transport and emitting layer and tris(8-hydroxy-quinolinato)aluminium (Alq₃) as electron-transport layer, the OLED electroluminescent characteristics show a mixture emission of MADN and Alq₃ with Commission Internationale d'Eclairage (CIE) color coordinates of (0.25, 0.34), indicating feasible hole transporting in MADN. Using 4,7-diphenyl-1,10-phenanthroline (BPhen) replacing Alq₃ as electron-transport layer, the OLED shows deep blue emission with a maximum luminous efficiency of 4.8 cd/A and CIE color coordinates of (0.16, 0.09). The hole transport characteristics of MADN are further clarified by constructing hole-only device and performing impedance spectroscopy analysis. The results indicate that MADN shows superior hole-transport ability which is almost comparable to typical hole-transport material of N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)-benzidine (NPB), suggesting a promising application for constructing efficient blue OLED with integrated hole-transport layer and emitting layer.     

Synthesis of a highly phosphorescent emitting iridium(III) complex and its application in OLEDs

A rigid ligand benzo[de]benzo[4,5]imidazo[2,1-α]isoquinolin-7-one (biio) was designed and conveniently synthesized, and the corresponding bis-cyclometalated iridium complex (biio)₂Ir(acac) (acac = acetylacetone) was prepared. The light emitting and electrochemical properties of this complex were studied. The complex has the characters of simply synthetic procedure and strong phosphorescence. The electroluminescent device using this complex as dopant was fabricated. The device had the structure of ITO/NPB (40 nm)/Ir complex:CBP (7%, 30 nm)/BCP (15 nm)/Alq₃ (30 nm)/LiF (1 nm)/Al (100 nm). The maximum emission of the device was at 496 nm. The maximum brightness of the device can reach 79640 cd m⁻² with an external quantum efficiency of 12.1% and a maximum current efficiency of 31.7 cd A⁻¹.     

一种新型铕配合物的有机电致发光性能

研究了一种新型的稀土金属铕配合物EuL₁L₂的光致发光和电致发光特性。将这种铕配合物掺杂到PVK:PBD中,制备成结构为ITO/PVK:PBD:EuL₁L₂/PBD/Alq₃/Mg:Ag/Ag的器件,对其电致发光性能进行研究,发现Eu³⁺离子和Alq₃的相对发光强度随PVK:PBD:EuL₁L₂和Alq₃之间的激子阻挡层PBD的厚度变化而变化,通过调节PBD的厚度,得到了色纯度较高的红色电致发光器件,其光谱具有显著的Eu³⁺离子的光谱特征。