High efficiency top-emitting white organic light-emitting devices with a (metal/organic)2 cathode

White top-emitting organic light-emitting devices (TEOLEDs) were fabricated on a glass substrate with metal/organic multilayer of (Ag/Alq₃)₂ (Alq₃ is tris-(8-hydroxyquinoline) aluminum) as cathode. White TEOLEDs with high efficiency were obtained due to the microcavity effects. And the (Ag/Alq₃)₂ cathode, which adjusted the optical characteristics of the devices, played an important role. In addition, Alq₃–Ag–Alq₃ multilayer could work as a buffer layer, which would simplify the process of encapsulation for devices. We also calculated the electroluminescence spectrum of devices encapsulated with Al₂O₃ (150 nm) and Al₂O₃(75 nm)/ZrO₂(75 nm). And the results indicated that the CIE coordinates is almost the same between with and without encapsulating.     

Ultrafast laser ablation of indium tin oxide thin films for organic light-emitting diode application

Ultrafast laser ablation of ITO thin film coated on the glass has been investigated as a function of laser fluence as well as the number of laser pulses. The ablation threshold of ITO thin film was found to be 0.07 J/cm² that is much lower than that of glass substrate (about 1.2–1.6 J/cm²), which leads to a selective ablation of ITO film without damage on glass substrate. The changes in the electrical resistance and morphology of ablated trench of ITO electrode were found to be strongly dependent on the processing conditions. We present the performance of organic light-emitting diodes (OLED) fabricated with ITO electrode patterned by ultrafast laser ablation.     

高效大面积有机白光照明研究及其展望

白光有机发光二极管(OLED)是新一代健康节能照明光源,光效性能已超过荧光灯水平。自从OLED技术问世以来,研究人员陆续开展了关于OLED照明的研究工作。本文介绍了OLED照明的特点,以及国内外OLED照明发展现状,讨论了发展OLED照明技术和装备国产化所亟待解决的重大难题和面临的挑战,重点论述了发展高效大面积OLED照明器件制备技术及推动OLED照明产业化的重要意义。     

IPTO薄膜制备及其在有机光电器件中的应用

新型IPTO(Pr Ti O3掺杂In2O3)薄膜的可见光透过率及导电性可与商业化的ITO薄膜媲美。采用双源电子束设备制备了一种新型的IPTO透明导电薄膜,通过开尔文探针法测试,其功函数为5.14 e V。为验证新型IPTO透明导电阳极对有机电致发光器件性能的影响,将IPTO替代商业化ITO作为阳极制备了有机电致发光器件。基于IPTO阳极的器件的亮度最大值为85 140 cd/m2,外量子效率最大值为3.16%,分别为以ITO为阳极的器件的3倍及1.13倍。这种性能的改善是由于IPTO具有较小的表面粗糙度及较高的功函数,可以降低阳极的注入势垒,有利于电荷向有机层注入,改善了器件内的空穴及电子的注入平衡。     

Synthesis and characteristics of bis(2,4-dimethyl-8-quinolinolato)(triphenylsilanolato)aluminum (III): A potential hole-blocking material for the organic light-emitting diodes

A new five-coordinated bis(2,4-dimethyl-8-quinolinolato)(triphenylsilanolato)aluminum (III) (24MeSAlq) material, having bulky substituents, was prepared in one-step reaction and was characterized. The photoluminescent (PL) spectrum of 24MeSAlq shows the largest hypsochromic shift exhibiting the maximum wavelength at the peak of 461 nm among the blue-emitting q₂AlOR-type complexes (q = 8-quinolinolato ligand and OR = aryloxy or alkoxy ligand) reported. The deep blue device composed of ITO/2-TNATA (60 nm)/NPB (15 nm)/24MeSAlq (20 nm)/Alq₃ (45 nm)/LiF (1 nm)/Al (100 nm), which uses 24MeSAlq as a hole-blocking layer and applies a principle efficiently confining an exciton recombination zone into a hole transporting layer, shows the maximum electroluminescent (EL) at the peak of 446 nm originating from the NPB emissive layer. This is attributed to an excellent hole-blocking property due to the high HOMO (highest occupied molecular orbital) energy level (6.14 eV).     

半晶性有机半导体薄膜形态结构及对有机发光器件老化的影响

以NPB（N,N’-二苯基-N,N’-二（1-萘基）-1,1’-联苯-4,4’-二胺）为例,简要综述了本课题组近年来在发光有机半导体薄膜形态结构方面的研究进展．通过差热分析、偏光显微镜、透射电子显微镜、电子衍射、原子力显微镜表征,确认NPB是一类本征半晶性材料．一般的OLED器件采用的是非晶的NPB薄膜．基于等温结晶和表面诱导结晶实验确认,OLED器件可能存在两种热力学老化机制．对于采用非晶衬底的OLED器件,当NPB薄膜厚度小于临界厚度时器件可以稳定工作;对于采用多晶缓冲层衬底的OLED器件,由于表面诱导NPB结晶不存在临界厚度限制,器件容易结晶老化．     

有机电致发光中的电致激基复合物(英文)

获得了一种基于电致激基复合物的高效率白光有机电致发光器件,采用p-i-n结构,有效地降低了器件的工作电压。器件的最大亮度为9 050 cd/m2,最大功率效率为2.63 lm/W。随着电压的增加,器件的C IE色坐标一直处于白光区域。     

Effect of substituent groups of porphyrins on the electroluminescent properties of porphyrin‐doped OLED devices

Six tetraphenylporphyrins (TRPPH₂) with different horizontal substituents R (R = H, CH₃, OH, F, Cl, Br) were synthesized, and the organic light‐emitting diode (OLED) devices with a general configuration of ITO/TPD/Alq₃:2%TRPPH₂/Alq₃/Al were prepared. The substituted TRPPH₂ was used as the host dopant, 4,4‐bis‐(m‐tolyphenylamino)biphenyl (TPD) was used as a hole‐transporting material, and aluminum tris(8‐quinolinolato) (Alq₃) was used as an electron‐transporting material. The electroluminescent (EL) properties of these devices were studied to understand the light emitting properties of the substituted TRPPH₂. Previous studies have found that the color emitted by the devices was dependent on the TRPPH₂ dye concentration. The electronic effect of the horizontal substituents R of TRPPH₂ influenced the turn‐on voltage, brightness, and power efficiency of the devices. Also, the electroluminescence performance of the porphyrin‐doped OLED devices depended on the effectual overlaps between the emission of electron‐transporting material and the absorption of the dopants. This means that it is possible to evaluate the electroluminescence performance of the porphyrin‐doped OLED devices based on the emission of electron‐transporting material and the absorption of the dopants. Copyright © 2009 John Wiley & Sons, Ltd.     

基于新型电荷生成层的P-i-N结构白色有机叠层电致发光器件

采用2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP): 5 wt.% cesium carbonate(Cs₂CO₃)和N, N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine(NPB): 20 wt.% molybdenum oxide(MoO₃)分别作为器件的电子注入层和空穴注入层,研究了N型和P-i-N结构有机电致发光器件的载流子传输特性.载流子传输层中BCP: Cs₂CO₃和NPB:MoO₃的引入有效增强了载流子注入能力,从而降低了器件的驱动电压.基于新型电荷生成层BCP: 5 wt.% Cs₂CO₃/ NPB: 20 wt.% MoO₃制备了色稳定、高效率P-i-N结构有机叠层器件.与单元器件相比,引入新电荷生成层有机叠层器件的最大电流效率增大了2.5倍,表明该电荷生成层可以有效地将电子和空穴分别注入到相邻发光单元中.采用该电荷生成层制备了P-i-N结构白色有机叠层器件,器件的上下发光单元分别为橙光和蓝光发射.当发光亮度从500增加到5 000 cd/m²时,器件的色坐标稳定在(0.33, 0.29)附近,接近白光等能点.利用单色发光单元堆叠制备白色有机叠层器件的方法为实现色稳定、高效率的白色有机电致发光器件提供了一种有效的途径.     

超薄层BCP对有机电致发光器件性能的影响

采用真空热蒸镀的方法,在常规的双层器件结构的基础上,设计了三层双异质结有机电致发光器件(OLED):indium-tin oxide(ITO)/N,N′-diphenyl-N,N′-bis(1-naphthyl)(1,1′-biphenyl)-4,4′-diamine(NPB)/2,9-dimethyl-4,7-diphenyl-1,10-phenan throline(BCP)/8-hydroxyquinoline aluminum(Alq3)/Mg∶Ag。通过对器件的电致发光(EL)光谱及器件性能的表征,研究了不同超薄层BCP的厚度对OLED器件性能的影响。结果表明,当超薄层BCP的厚度从0.1nm逐渐增加到4.0nm时,器件的EL光谱实现了绿光→蓝绿光→蓝光的变化;BCP层有效地调节了载流子的复合区域,改变了器件的发光颜色,提高了器件的亮度和发光效率。