一类非经典扩散方程整体解的存在唯一性及长时间行为

本文讨论非经典扩散方程第一初边值问题整体解的存在唯一性及长时间行为，建立了一系列新的结果，较好地改进许多已有的结论．     

电沉积n—CdSe在多硫溶液界面上的电荷转移机理

通过测定平带电位,澄清了OH~-离子在CdSe电极上的吸附情况,发现在S、S~(2-)、OH~-溶液中S~(2-)离子优先吸附,结合旋转环盘电极测量,证明n-CdSe电极在多硫溶液界面上的电荷转移过程。     

电子直线加速器束流均方根发射度变化方程

本文导出了考虑外场和束流效应后束流均方根发射度平方变化方程的一般表达式,并就仅考虑外场,仅考虑空间电荷场和仅考虑尾场等三种特殊情况进行了分析。     

QUENCHING PROBLEMS OF DEGENERATE FUNCTIONAL REACTION-DIFFUSION EQUATION

This paper is concerned with the quenching problem of a degenerate functional reaction-diffusion equation. The quenching problem and global existence of solution for the reaction-diffusion equation are derived and, some results of the positive steady state solutions for functional elliptic boundary value are also presented.     

Corrections of proofs for Hansen and Mélot's two theorems

The Randi? index R(G) of a (chemical) graph G is also called connectivity index. Hansen and Mélot [Variable neighborhood search for extremal graphs 6: analyzing bounds for the connectivity index, J. Chem. Inf. Comput. Sci. 43 (2003) 1-14] in their paper, characterized the chemical trees of given order and number of pendent vertices which have the minimum and maximum Randi? index, respectively. In this note, we point out the mistakes in the proofs of their results Theorems 8 and 10, while we still believe that the two theorems are true, and then we give their corrected proofs.     

Physical Analysis of a Possibility to Reach the 1.30-μm Emission from the GaAs-Based VCSELs with the InGaAs/GaAs Quantum-Well Active Regions and the Intentionally Detuned Optical Cavities

Physical aspects of an operation of the GaAs-based InGaAs/GaAs quantum-well (QW) VCSELs with the intentionally detuned optical cavities have been considered in the present paper using the comprehensive three-dimensional self-consistent optical–electrical–thermal-gain simulation. In GaAs-based structures, very good DBR resonator mirrors and a very efficient methods to confine radially both the current spreading and the electromagnetic field with the aid of oxide apertures may be applied. It has been found using the above simulation that even currently available immature technology enables manufacturing the above devices emitting radiation of wavelengths over 1.20 μm. In particular, while the room-temperature 1.30-μm lasing emission is still beyond possibilities of the InGaAs/GaAs QW VCSELs, these structures may offer analogous 1.25-μm emission, especially for the high-power and/or high-temperature operation.     

Formation of Fe i –B pairs in silicon at high temperatures

We report on the detection of Fe _i –B pairs in heavily B doped silicon using ⁵⁷Fe emission Mössbauer spectroscopy following implantation of radioactive ⁵⁷Mn⁺ parent ions (T _1/2?=?1.5 min) at elevated temperatures >?850 K. The Fe _i –B pairs are formed upon the dissociation of Fe _i –V pairs during the lifetime of the Mössbauer state (T _1/2?=?100 ns). The resulting free interstitial Fe_i diffuses over sufficiently large distances during the lifetime of the Mössbauer state to encounter a substitutional B impurity atom, forming Fe _i –B pairs, which are stable up to ～1,050 K on that time scale.     

Low-frequency noise and inelastic tunneling spectroscopy in Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) epitaxial magnetic tunnel junctions

We report on tunnelling magnetoresistance (TMR), current–voltage (IV) characteristics and low-frequency noise in epitaxially grown Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) magnetic tunnel junctions (MTJs) with dimensions from 2×2 to 20×20 μm². The evaluated MgO energy barrier (0.50±0.08 eV), the barrier width (13.1±0.5 Å) as well as the resistance times area product (7±1 MΩ μm²) show relatively small variation, confirming a high quality epitaxy and uniformity of all MTJs studied. At low temperatures (T<10 K) inelastic electron tunneling spectroscopy (IETS) shows anomalies related to phonons (symmetric structures below 100 meV) and asymmetric features above 200 meV. We explain the asymmetric features in IETS as due to generation of electron standing waves in one of the Fe electrodes. The noise power, though exhibiting a large variation, was observed to be roughly anti-correlated with the TMR. Surprisingly, for the largest junctions we observed a strong enhancement of the normalized low-frequency noise in the antiparallel magnetic configuration. This behavior could be related to the influence of magnetostriction on the characteristics of the insulating barrier through changes in local barrier defects structure.     

ON DIRECT METHOD OF SOLUTION FOR A CLASS OF SINGULAR INTEGRAL EQUATIONS

In this article, by introducing characteristic singular integral operator and associate singular integral equations (SIEs), the authors discuss the direct method of solution for a class of singular integral equations with certain analytic inputs. They obtain both the conditions of solvability and the solutions in closed form. It is noteworthy that the method is different from the classical one that is due to Lu.     

Effect of hydrogen on interatomic bonds in austenitic steels

Mössbauer spectroscopy was used to investigate the influence of dissolved hydrogen on the interatomic bonds in austenitic steels. It was carried out to prove the decohesion mechanism of hydrogen embrittlement (HE). It is shown that hydrogen increases Debye temperature, i.e., the interatomic bonds in hydrogenated austenitic steel becomes stronger.