Effects of junction defect healing in Germanium n-MOSFET through thermal annealing

In this paper, the impact of junction defect healing through thermal annealing in Ge n-metal-oxide-semiconductor field-effect transistors (MOSFETs) is thoroughly investigated. Germanium (Ge) is strongly affected by the presence of point defects within the crystal, which is the source of leakage current and low frequency noise. For MOSFET applications, these defects at the junction of the source and drain area are created by ion implantation. However, these can be significantly reduced by proper thermal treatment. Here, the effect of defect healing is investigated and presented through current–voltage characteristics of a n⁺/p diode and MOSFET I_D-V_G measurement, and secondary ion mass spectroscopy (SIMS).     

GaInP/GaAs/Ge三结太阳电池不同能量质子辐照损伤模拟

以GaInP/GaAs/Ge三结太阳电池为研究对象,开展了能量为0.7, 1, 3, 5, 10 MeV的质子辐照损伤模拟研究,建立了三结太阳电池结构模型和不同能量质子辐照模型,获得了不同质子辐照条件下的I-V曲线,光谱响应曲线,结合已有实验结果验证了本文模拟结果,分析了三结太阳电池短路电流、开路电压、最大功率、光谱响应随质子能量的变化规律,利用不同辐照条件下三结太阳电池最大输出功率退化结果,拟合得到了三结太阳电池最大输出功率随位移损伤剂量的退化曲线.研究结果表明,质子辐照会在三结太阳电池中引入位移损伤缺陷,使得少数载流子扩散长度退化幅度随质子能量的减小而增大,从而导致三结太阳电池相关电学参数的退化随质子能量的减小而增大.相同辐照条件下,中电池光谱响应退化幅度远大于顶电池光谱响应退化幅度,中电池抗辐照性能较差,同时中电池长波范围内光谱响应的退化幅度比短波范围更大,表明中电池相关电学参数的退化主要来源于基区损伤.     

基于Al6Ge2O13还原制备Ge纳米粒子及其光致发光性能研究

以3-三氯锗丙酸和硝酸铝为原料，通过共沉淀法合成了Al₆Ge₂O₁₃陶瓷粉体，并利用TG-DSC、FTIR、XRD等研究了其形成过程。采用选择还原技术对Al₆Ge₂O₁₃进行还原处理，还原产物观察到发光峰位于564、611、681、730和774 nm的室温光致发光现象。比较不同温度下还原的样品，发现550 ℃保温3 h还原制备的样品发光强度最强，通过XRD、XPS和Raman光谱研究表明样品在可见和近红外光区的发光是源于平均粒径为1.98 nm且未能形成完整晶格的Ge纳米粒子团簇。     

ITQ-13分子筛合成及酸性的DFT理论计算研究

以氢氧化已烷双铵(R(OH)2)和溴化六甲双铵(HMBr2)为模板剂分别合成了ITQ-13、B-ITQ-13、Al-ITQ-13分子筛,采用XRD、SEM-EDX、N2吸附-脱附、FT-IR、MAS NMR等手段对合成的分子筛进行表征,比较了两种模板剂合成的ITQ-13分子筛的性质,以溴化六甲双铵(HMBr2)为模板剂,在碱性加晶种的条件下,反应3~10 d合成出了ITQ-13以及含杂原子B、Al的ITQ-13分子筛,降低了合成的成本.以溴化六甲双铵为模板剂合成的ITQ-13晶貌有块状和球形针状堆积混合晶貌组成,孔道宽,晶粒因堆积形成的介孔居多.量子力学中的密度泛函理论(DFT)计算Ge、B、Al同晶取代Si在ITQ-13分子筛9个不同T位的分布,T5位对于ITQ-13分子筛的特殊骨架结构形成具有重要作用,对于骨架的电荷平衡以及几何约束力都有重要作用.Al原子容易替代的位置是位于九元环和十元环孔口相交处的T6、T7位.     

单原子Ge助剂修饰Cu(111)晶面上CO2加氢制甲醇的机理研究

针对CO₂热催化转化制甲醇过程中CO₂吸附、活化较困难及副产物较多的问题,提出采用单原子Ge助剂修饰Cu(111)晶面的解决思路,通过密度泛函理论(DFT)计算研究了CO₂在Ge-Cu(111)晶面上加氢合成甲醇的反应机理。结果表明,单原子Ge助剂的电子调控增加了与其相邻的 Cu 原子的电子云密度,使 CO₂分子在含 Ge 活性界面上的吸附能力显著增强:CO₂在 Ge-Cu(111)晶面上的吸附能约为Cu(111)晶面的1.5倍,约为Pd改性Cu(111)晶面的2.4倍,进而使逆水煤气变换(RWGS)反应路径速控步骤的活化能降低了近 20 kJ·mol^-1,同时衍生出 3条生成甲醇的 RWGS新路径;此外,Ge-Cu(111)晶面上甲酸盐路径由于速控步骤活化能大幅上升而被禁阻,进而CO及烃类等副产物选择性大幅降低,Ge-Cu(111)晶面上CO₂加氢制甲醇选择性升高。     

离子源辅助电子枪蒸发制备Ge1-xCx薄膜

应用电子枪蒸发纯Ge,考夫曼离子源辅助的方法在Ge基底上沉积了Ge1－xCx薄膜.制备过程中,Ge作为蒸发材料,CH4作为反应气体.通过改变CH4/(CH4+Ar)的气体流量比（G）,制备了G从40％到85％的Ge1－xCx薄膜.应用X射线衍射仪（XRD）测量了Ge1－xCx薄膜的晶体结构,使用傅里叶红外光谱仪（FTIR）测量了2～22 μm的光学透过率,X射线光电子能谱测试（XPS）计算得到C的含量随G的变化关系,用纳米压痕硬度测试计测量了Ge1－xCx薄膜的硬度,原子力显微镜（AFM）测量了G为60％,85％时Ge1－xCx薄膜的表面粗糙度.测试结果表明：制备的Ge1－xCx薄膜在不同的G值下均为无定形结构.折射率随着G值的增加而减小,在3.14～3.89之间可变,并具有良好的均匀性以及极高的硬度.     

咖啡酸锗与hsDNA相互作用的光谱和电化学研究

通过测量咖啡酸锗(CAA-Ge)的荧光强度,并比较加入鲱鱼精DNA(hsDNA)后的荧光光谱和吸收光谱,以及循环伏安曲线变化,判断两者的作用方式,得到两者的本征结合常数达到5.23×104L.mol-1,且一个CAA-Ge分子可同时与6个hsDNA碱基对发生作用。并通过改变体系,进一步证明了两者的键合方式为嵌入和静电吸引为主的混合方式。     

On the corporate votes and their relation with daisy models

The distribution of votes of one of the corporate parties in Mexico during elections of 2000, 2003 and 2006 is analyzed. After proper normalization and unfolding, the agreement of the vote distributions with those of daisy models of several ranks is good. These models are generated by retaining each r+1 level in a sequence which follows a Poisson distribution. Beyond the fact that rank 2 daisy model resembles the distribution of the quasi-optimal distances for the Traveling Salesman Problem, no clear explanation exists for this behavior, but the agreement is not fortuitous and the possibility of a universal phenomena for corporate vote is discussed.     

Perturbation theory for velocity-dependent potentials

In the presence of a velocity-dependent Kisslinger potential, the partial-wave, time-independent Schr?dinger equation with real boundary conditions is written as an equation for the probability density. The changes in the bound-state energy eigenvalues due to the addition of small perturbations in the local as well as the Kisslinger potentials are determined up to second order in the perturbation. These changes are determined purely in terms of the unperturbed probability density, the perturbing local potential, as well as the Kisslinger perturbing potential and its gradient. The dependence on the gradient of the Kisslinger potential stresses the importance of a diffuse edge in nuclei. Two explicit examples are presented to examine the validity of the perturbation formulas. The first assumes each of the local and velocity-dependent parts of the potential to be a finite square well. In the second example, the velocity-dependent potential takes the form of a harmonic oscillator. In both cases the energy eigenvalues are determined exactly and then by using perturbation theory. The agreement between the exact energy eigenvalues and those obtained by perturbation theory is very satisfactory. Received: 24 May 2002 / Accepted: 15 July 2002 / Published online: 3 December 2002 RID="a" ID="a"e-mail: mij@hu.edu.jo Communicated by V. Vento