Photoluminescence of Ge nanostructures grown by gas source molecular beam epitaxy on silicon (1 1 8) surface

In this paper, we present a photoluminescence (PL) study of Si/Ge/SiGe/Si structures grown by gas source molecular beam epitaxy on an (1 1 8) undulated surface with various Ge coverage. Nucleation and growth of Ge films is obtained by the Stranski–Krastanov mechanism. The influence of the substrate orientation on the changeover 2D–3D growth mode is investigated. Furthermore, we show the use of growing an SiGe wetting layer to control the uniformity of the Ge island size. The PL signal related to the Ge islands is found to be highly dependent of the power excitation and is observed up to room temperature.     

ChemInform Abstract: Endohedral Nickel,Palladium, and Platinum Atoms in 10‐Vertex Germanium Clusters: Competition Between Bicapped Square Antiprismatic and Pentagonal Prismatic Structures

ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.     

Revealing Capacity Degradation of Ge Anodes in Lithium-Ion Batteries Triggered by Interfacial LiH

The Germanium (Ge), as a fast-charging and high specific capacity (1568 mAh g⁻¹) alloy anode, is greatly hampered in practical application by poor cyclability. To date, the understanding of cycling performance degradation remains elusive. This study illustrates that, contrary to conventional beliefs, most of the Ge material in failed anodes still retains good integrity and does not undergo severe pulverization. It is revealed that capacity degradation is clearly correlated to the interfacial evolution of lithium hydride (LiH). Tetralithium germanium hydride (Li₄Ge₂H), as a new species derived from LiH, is identified as the culprit of Ge anode degradation, which is the dominant crystalized component in an ever-growing and ever-insulating interphase. The significantly increased thickness of the solid electrolyte interface (SEI) is accompanied by the accumulation of insulating Li₄Ge₂H upon cycling, which severely retards the charge transport process and ultimately triggers the anode failure. We believe that the comprehensive understanding of the failure mechanism presented in this study is of great significance to promoting the design and development of alloy anode for the next generation of lithium-ion batteries.     

Exactly complete solutions of the Schrödinger equation with a spherically harmonic oscillatory ring-shaped potential

A spherically harmonic oscillatory ring-shaped potential is proposed and its exactly complete solutions are presented by the Nikiforov-Uvarov method. The effect of the angle-dependent part on the radial solutions is discussed.     

[Nb@Ge13/14]3−: New Family Members of Ge-Based Intermetalloid Clusters

During the past two decades, single-atom-centered medium-sized germanium clusters [M@Ge_n] (M=transition metals, n>12) have been extensively explored, both from theoretical perspectives and experimental gas-phase syntheses. However, the actual structural arrangements of the Ge₁₃ and Ge₁₄ endohedral cages are still ambiguous and have long remained an unresolved problem for experimental implementation. In this work, we successfully synthesize 13-/14-vertex Ge clusters [Nb@Ge₁₃]³⁻ ( 1 ) and [Nb@Ge₁₄]³⁻ ( 2 ), which are structurally characterized and exhibit unprecedented topologies, neither classical deltahedra nor 3-connected polyhedral structures. Theoretical analysis indicates that the major stabilization of the Ge backbones arises due to the substantial interaction of Ge 4p-AOs with the endohedral Nb 4d-AOs through three/four-center two-electron bonds with an enhanced electron density accumulated over the shortest Nb−Ge13 contact in 1 . Low occupancies of the direct two-center two-electron (2c–2e) Nb−Ge and Ge−Ge σ bonds point to a considerable degree of electron delocalization over the Ge cages revealing their electron deficiency.     

Atomistic study of GaSe/Ge(111) interface formed through van der Waals epitaxy

Layered materials can be grown on various substrates through van der Waals epitaxy (vdWE) regardless of lattice mismatch. The atomistic study of the film-substrate interface in vdWE is becoming increasingly important due to their expected applications as two-dimensional (2D) materials. In this contribution, we have grown GaSe thin films on Ge(111) substrates by molecular beam epitaxy and studied the GaSe/Ge(111) interface using high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Cross-sectional HAADF-STEM observations revealed that the grown layers adopt predominantly the expected wurtzite-like structure and stacking, but layers with zinc-blende-like structure, similar to Ga₂Se₃ but apparently different, and other layer stacking sequences, exist locally near the film-substrate interface. These results demonstrate that even in vdWE, structural changes can occur in the grown layers adjacent to the substrate, highlighting the importance of such interface for synthesizing and applying ultimately thin 2D materials.     

Short Te …︁ Te bonding contacts in a new layered ternary telluride: Synthesis and crystal structure of 2D Nb3GexTe6 (x ≃ 0.9)

The new layered ternary compound Nb₃Ge_xTe₆ (x ? 0.90) was prepared by direct combination of the elements taken in the stoichiometric proportions 3 : 1 : 6, heated at 1 000 °C for 10 days in silica tubes and quenched to room temperature. The phase crystallizes in the orthorhombic symmetry, space group Pnma (#62), with the following single crystal refined parameters: a = 643.18(5) pm, b = 1391.98(11)pm and c = 1 154.07(5) pm, with Z = 4. The structure was refined to an R of 3.4% (R_w = 4.6%), with 1969 independent reflexions and 49 parameters. The structure is based on the close stacking of trigonal prismatic (TP) slabs in the AA/BB mode. The slabs can be seen as built up from face sharing biprisms, which are filled either by one or by two niobium cations situated in the middle of the trigonal prisms. The germanium is located in the middle of the common face of two prisms, leading to a rather unusual anionic square coordination. The refinements showed that this latter cation does not fill completely its square site. No cation was found in the van der Waals gap between the slabs. The mean d_{Ge? Te} distance (276.5 pm) is in agreement with Ge^II cations, while some Te …? Te distances (from 333.84 to 361.65pm) are too short for anions in a simple contact. These bonding distances, already mentionned in some MTe₂ compounds, are to be ascribed to charge transfer in the structure, with a partial oxidation state for the tellurium anions. Short Nb? Nb and Nb? Ge distances (292.0 and 281.3 pm, respectively) imply intercationic bonding within the slabs.     

杭州老虎洞窑古陶瓷成分的化学计量学研究

用支持向量机算法研究了与杭州老虎洞古陶瓷有关的两个断源、断代问题。作为化学计量学的～种新型分类算法,支持向量机在小样本问题上表现出良好的泛化能力,与特征选择方法结合,可以有效处理样本少,特征多的问题。本研究综合利用支持向量机、特征选择算法和其它化学计量学算法研究了杭州凤凰山麓万松岭附近的古窑遗址和“传世哥窑”的断源、断代问题,证明老虎洞窑与郊坛下窑产品截然不同,万松岭附近地面收集瓷片样本是老虎洞窑宋代地层的瓷片滑落所致,而“传世哥窑”样品可能是老虎洞窑元代时的产品。实验表明：支持向量机算法与化学分析相结合可以成为研究古陶瓷断源和断代问题的一种新方法。     

新的溶胶-凝胶法制备Ge/SiO2量子点玻璃

以3－三氯锗丙酸和正硅酸乙酯为原料,通过水解、缩聚凝胶热处理及氢气反应,在SiO2凝胶玻璃中析出立方相Ge纳米晶,当x=30时,凝胶玻璃中除了析出立方相Ge纳米晶处,还析出六方相GeO2,利用XRD测试了Ge纳米晶的大小,发现随着掺杂量的增加,纳米颗粒粒径从1nm增大到10nm,电子衍射表明镶嵌在SiO2凝交玻璃中的Ge纳米晶为多晶结构。     

Small and high-density GeSiC dots stacked on buried Ge hut-clusters in Si

Self-assembled GeSiC dots stacked on a Ge hut-cluster layer buried in Si have been investigated. The critical thickness for formation of GeSiC dots is reduced owing to the strain fields from the buried hut-clusters. By utilizing the stacked structure, the dot size is decreased and the uniformity is improved. The highest density of the GeSiC dots with stacked structures is 7.4×10¹⁰ cm⁻², which is six times larger than that of single GeSiC dots. The formation of the self-assembled GeSiC dots is strongly influenced by being stacked with buried Ge dots as well as C incorporation.