Experimental evidence for anisotropic response of a driven vortex lattice

We present kinetic inductance measurements in current driven Josephson junction arrays. Measurements performed with circular coils indicate that this technique is very sensitive to the vortex mobility. Results obtained with anisotropic detection coils provide experimental evidence for the anisotropic response of a driven vortex lattice. Anisotropic behavior is obtained when rising the temperature or the mean vortex velocity as indicated by the loss of the superconducting shielding capability, first in the direction of vortex motion and then in the perpendicular direction.     

荧光法研究Ge-132对牛血清白蛋白Maillard反应的抑制作用

人体内氨基酸及蛋白质的非酶糖化反应(Maillard反应)与糖尿病及其并发症的关系已经引起广泛注意[1].有机锗化合物β-羧乙基锗倍半氧化物(Ge-132)具有预防糖尿病及调节糖代谢的作用[2].     

Short Te …︁ Te bonding contacts in a new layered ternary telluride: Synthesis and crystal structure of 2D Nb3GexTe6 (x ≃ 0.9)

The new layered ternary compound Nb₃Ge_xTe₆ (x ? 0.90) was prepared by direct combination of the elements taken in the stoichiometric proportions 3 : 1 : 6, heated at 1 000 °C for 10 days in silica tubes and quenched to room temperature. The phase crystallizes in the orthorhombic symmetry, space group Pnma (#62), with the following single crystal refined parameters: a = 643.18(5) pm, b = 1391.98(11)pm and c = 1 154.07(5) pm, with Z = 4. The structure was refined to an R of 3.4% (R_w = 4.6%), with 1969 independent reflexions and 49 parameters. The structure is based on the close stacking of trigonal prismatic (TP) slabs in the AA/BB mode. The slabs can be seen as built up from face sharing biprisms, which are filled either by one or by two niobium cations situated in the middle of the trigonal prisms. The germanium is located in the middle of the common face of two prisms, leading to a rather unusual anionic square coordination. The refinements showed that this latter cation does not fill completely its square site. No cation was found in the van der Waals gap between the slabs. The mean d_{Ge? Te} distance (276.5 pm) is in agreement with Ge^II cations, while some Te …? Te distances (from 333.84 to 361.65pm) are too short for anions in a simple contact. These bonding distances, already mentionned in some MTe₂ compounds, are to be ascribed to charge transfer in the structure, with a partial oxidation state for the tellurium anions. Short Nb? Nb and Nb? Ge distances (292.0 and 281.3 pm, respectively) imply intercationic bonding within the slabs.     

Ab initio and DFT studies on tautomerism of indazole in gaseous and aqueous phases

Electronic structure of optimized Ge₅, Ge₁₇, Ge₅–O and Ge₅ embedded in SiO₂ nanoparticles have been studied by density functional theory to find out the effect of cluster size and Ge–O bond(s) on the optical energy gap between LUMO and HOMO. It was found that the optical energy gap depends on both cluster size and the number of Ge–O bonds nonlinearly. The optical energy gap was found to be in visible light range when the Ge₅ nanoparticle has been embedded in SiO₂ matrix.     

Photoconductivity of erbium-doped germanium

We have applied the technique of Photo Thermal Ionization Spectroscopy (PTIS) to the study of an erbium-doped p-Ge epitaxial layer, grown by MBE on an undoped n-type germanium substrate. The Er-doped Ge layer shows continuum photoconductivity response in the far-infrared region extending from 70 cm^–1 to 900 cm^–1. This type of epitaxial Er-doped Ge layers is a potentially attractive system for photoconductivity detectors of far-infrared radiation. Below 900 cm^–1 three acceptor-like charged states can be distinguished with ionization energies of 9, 26.6 and 50 meV. Additionally, a study of the photoconductive response of the same sample for radiation from 1000 cm^–1 to 10000 cm^–1, i.e., for radiation energies well inside the forbidden gap to energies above it, shows a wealth of levels, some of which have previously been associated with erbium.On leave from: Instituto de Física, Universidad Autónoma de Puebla, Puebla, México     

荧光法研究Ge—132对苯丙氨酸Maillard反应的抑制作用

哺乳动物体内氨基酸及蛋白质的非酶糖化反应（Ｍａｉｌａｒｄ反应）与糖尿病及其并发症的关系已引起广泛关注［１］，β－羧乙基锗倍半氧化物（Ｇｅ－１３２）具有预防糖尿病和调节糖代谢的作用［２］，研究Ｇｅ－１３２对Ｍａｉｌａｒｄ反应的抑制作用对于开发防治糖尿病...     

Cathodoluminescence Depth Profiling in SiO2:Ge Layers

 For investigation of the luminescent center profile cathodoluminescence measurements are used under variation of the primary electron energy E ₀ = 2…30 keV. Applying a constant incident power regime (E ₀·I ₀ = const), the depth profiles of luminescent centers are deduced from the range of the electron energy transfer profiles dE/dx. Thermally grown SiO₂ layers of thickness d = 500 nm have been implanted by Ge⁺-ions of energy 350 keV and doses (0.5–5)10¹⁶ ions/cm². Thus Ge profiles with a concentration maximum of (0.4 – 4) at% at the depth of d_m≅240 nm are expected. Afterwards the layers have been partially annealed up to T _a = 1100 °C for one hour in dry nitrogen. After thermal annealing, not only the typical violet luminescence (λ = 400 nm) of the Ge centers is strongly increased but also the luminescent center profiles are shifted from about 250 nm to 170 nm depth towards the surface. This process should be described by Ge diffusion processes, precipitation and finally Ge nanocluster formation. Additionally, a Ge surface layer is piled-up extending to a depth of roughly 25 nm.     

Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

Strain-compensated Ge/Si_0.15Ge_0.85 multiple quantum wells were grown on an Si_0.1>Ge_0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n⁺-Si(001) substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.     

Reaction Behaviors of S-, O-, and N-containing Aliphatic Molecules with a Propyl Moiety on Ge(100) Surface

The reaction pathways of 1-propanethiol, 1-propanol, and propylamine molecules, containing a propyl moiety, on a Ge(100) surface were investigated using high-resolution photoemission spectroscopy (HRPES) experiments and density functional theory (DFT) calculations. Upon analysis of the HRPES data, the adsorption of 1-propanethiol and 1-propanol was found to occur through a dissociation reaction, whereas that of propylamine took place via N dative bonding at room temperature. On the basis of our DFT results, adsorption geometries and transition states for each of these molecules on the Ge(100) surface were confirmed. Systematic studies of S-, O-, and N-containing molecules, composed of an identical propyl moiety, on the Ge(100) surface provide insight into the adsorption mechanism of aliphatic molecules containing alkyl chains on the Ge(100) surface.     

Spectral probing of carrier traps in Si–Ge alloy nanocrystals

Photogenerated carriers in Si–Ge alloy nanocrystals (NCs) prepared by co‐sputtering method were investigated by mean of transient induced absorption. The carrier relaxation features multiple components, with three decay life times of τ ≈ 600 fs, 12 ps, and 15 ns, established for Si_0.2Ge_0.8 alloy NCs of a mean crystal size of 9 nm and standard deviation of 3 nm. Deep carrier traps, identified at the boundary between the NCs and the SiO₂ host with the ionization energy of about 1 eV, are characterized by a long‐range Coulombic potential. These are responsible for rapid depletion of free carrier population within a few picoseconds after the excitation, which explains the low emissivity of the investigated materials, and also sheds light on the generally low luminescence of Si/Ge and Ge NCs. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)