High-power high-stability Q-switched green laser with intracavity frequency doubling of diode-pumped composite ceramic Nd:YAG laser

We successfully obtain high-average-power high-stability Q-switched green laser based on diode-side-pumped composite ceramic Nd:YAG in a straight plano-concave cavity. The temperature distribution in composite ceramic Nd:YAG crystal is numerically analyzed and compared with that of conventional Nd:YAG crystal. By use of a composite ceramic Nd:YAG rod and a type-II high gray track resistance KTP (HGTR-KTP) crystal, a green laser with an average output power of 165 W is obtained at a repetition rate of 25 kHz, with a diode-to-green optical conversion of 14.68%, and a pulse width of 162 ns. To the best of our knowledge, both the output power and optical-to-optical efficiency are the highest values for green laser systems with intracavity frequency doubling of this novel composite ceramic Nd:YAG laser to date. The power fluctuation at around 160 W is lower than 0.3% in 2.5 hours.     

板条Nd:YAG晶体的合成盘抛光技术

针对高功率板条激光器核心工作器件——板条Nd:YAG晶体的超精密加工开展研究,分析了具有特殊构型的板条Nd:YAG晶体元件的加工性能及工艺难点,提出了一种新的基于合成盘抛光的板条Nd:YAG晶体加工工艺,并对规格为100mm×30mm×3mm的板条Nd:YAG晶体进行了加工实验。实验结果表明,合成盘抛光可以很好地控制元件的塌边现象;通过磨料的优化选择,在合成盘抛光工艺中匹配合适粒度的Al2O3磨料能够实现元件的低缺陷加工,元件下盘后的全反射面平面度达0.217λ(1λ=632.8nm),端面平面度达到0.06λ,表面粗糙度达0.55nm(RMS),端面楔角精度可达2″。     

LD抽运Cr,Tm,Ho∶YAG微片激光器单纵模运转特性的研究

研究了LD抽运的单纵模Cr,Tm,Ho∶YAG微片激光器,激光器厚度为1?mm,在用波长785?nm的LD进行端面抽运时,激光器阈值为1060?mW,单纵模激光最大输出功率为31?mW. 对激光器输出功率随温度变化特性进行了研究,验证了CTH∶YAG晶体的温度敏感性. 还研究了激光器的温度调谐特性,实验测得激光器的温度调谐系数为14?GHz/℃. 关键词： 激光光学 CTH∶YAG微片激光器 LD抽运 单纵模运转     

Tm3+/Yb3+ ∶LaF3纳米体系中掺杂Yb3+ 离子对Tm3+ 离子荧光发射的影响

为研究Yb³⁺离子浓度变化对Tm³⁺离子在蓝色波段荧光强度的影响,以NaF和La(NO₃)₃为原料,采用水热法制备了Tm³⁺和Yb³⁺共掺的Tm³⁺/ Yb³⁺∶LaF₃纳米颗粒.用X射线衍射对LaF₃纳米颗粒进行表征的结果显示,纳米晶体结构呈六方相.透射电镜的观测结果显示,纳米颗粒样品大小均匀、分散性良好.在波长为800 nm的激光激发下,观测到了上转换蓝光发射,其中包括波长为474 nm和479 nm的较强的荧光辐射(相应的跃迁为1G4→3H6)和波长位于450 nm的强度较弱的荧光发射(相应的跃迁为1D2→3F4).通过观测不同Yb³⁺离子浓度条件下共掺Tm³⁺/Yb³⁺∶LaF₃样品的荧光光谱,研究了Yb³⁺离子掺杂浓度对于Tm³⁺离子的荧光发射的影响,并探讨了产生这种现象的原因.研究结果显示,对于1G4→3H6跃迁产生的荧光发射(474 nm),当Yb³⁺离子浓度增大时,反向能量传递速率的增加导致了荧光强度的增大.然而,当Yb³⁺离子浓度增大到一定程度时,Yb³⁺离子激发态能级寿命的减少将引发荧光强度的下降.相比较而言,Yb³⁺离子的浓度的变化对于1D2→3F4跃迁产生的位于450 nm处荧光强度的影响较弱.     

Far infrared sub-nanosecond pulse generation in GaP with a time-synchronized mode-locked double-frequency Nd: Glass laser system

Light pulses of 149 m wavelength and 700 ps duration are generated by non-collinear phase-matched difference frequency mixing of laser pulses at 1053.5 and 1061 nm in a (110) cut GaP crystal. The pump laser pulses are generated in a time-synchronized mode-locked double-frequency Nd:glass laser system consisting of a silicate glass branch and a phosphate glass branch. A photon conversion efficiency of 4 × 10^–6 is achieved. The non-linear susceptibility constant of GaP is determined to be d ₁₄ = (10 ± 1) pm V^–1.     

Temperature characteristics of small signal gain for Nd/Cr:YAG ceramic lasers

Thermal dependence on the small signal gain of Nd/Cr:YAG (yttrium aluminum garnet) ceramics was observed experimentally. Usually, Nd:YAG crystal and ceramics have remarkable gain reduction when optical pumping is performed and the temperature of the laser media is upped to 373 K. A CW laser light generated in a 1064 nm Nd:YAG laser oscillator was amplified by Nd/Cr:YAG ceramic amplifier, and the output power was measured at non-saturation level. Laser small signal gain of the ceramic disk was kept to 470 K. This property was remarkably different from one of Nd:YAG crystals or ceramics. The peak shift of the fluorescence was observed experimentally when the temperature is high.     

Effect of sputtering power on surface topography of dc magnetron sputtered Ti thin films observed by AFM

Titanium films were deposited on glass substrates at room temperature by direct current (dc) magnetron sputtering at fixed Ar pressure of 1.7 Pa and sputtering time of 4 min with different sputtering power ranging from 100 to 300 W. Atomic force microscopy (AFM) was used to study topographic characteristics of the films, including crystalline feature, grain size, clustering and roughening. The amorphous-like microstructure feature has been observed at 100-150 W and the transition of crystal microstructure from amorphous-like to crystalline state occurs at 200 W. The increase in grain size of Ti films with the sputtering power (from 200 to 300 W) has been confirmed by AFM characterization. In addition, higher sputtering power (300 W) leads to the transformation of crystal texture from globular-like to hexagonal type. The study has shown that higher sputtering power results in the non-linear increase in deposition rate of Ti films. Good correlativity between the surface roughness parameters including root mean square (RMS) roughness, surface mean height (Ra) and maximum peak to valley height (P-V) for evaluating the lateral feature of the films has been manifested. Surface roughness has an increasing trend at 100-250 W, and then drops up to 300 W.     

Diode-pumped Q-switched Nd:GdVO4/KTP green laser formed with a flat–flat resonator

A diode-pumped acousto-optically Q-switched intracavity frequency-doubled Nd:GdVO₄/KTP green laser formed with a flat–flat resonator was demonstrated. 3.05 W of average green output power at pulse repetition frequency (PRF) of 40 kHz was obtained with an optical conversion efficiency of 18.4%, the effective intracavity frequency-doubling efficiency was 57%. At the incident pump power of 15 W, the shortest laser pulse occurred at PRF of 25 kHz with FWHM width of 14 ns, yielding the highest peak power of 7.44 kW; while the largest pulse energy of 0.14 mJ was achieved at PRF of 15 kHz.     

LD-pumped passively Q-switched Nd:YVO4 infrared and green lasers

A laser diode directly end-pumped, passively Q-switched Nd:YVO₄/Cr:YAG laser is presented in this paper. With 600 mW incident pump laser, Q-switched 1064 nm laser with an average power of 138 mW, pulse width of 19.8 ns, repetition rate of 170.1 kHz and peak power of 40.96 W is obtained. When a KTP crystal was inserted into the cavity, Q-switched 532 nm laser with an average power of 56 mW, pulse width of 28.4 ns, repetition rate of 118.2 kHz and peak power of 16.7 W is obtained at last.     

染料激光泵浦Nd：S－VAP晶体激光特性研究

实验测定了Ｎｄ：Ｓｒ５（ＶＯ４）３Ｆ（简称Ｎｄ：Ｓ－ＶＡＰ）晶体的吸收光谱特性；在５８３．０ｎｍ和８０９．０ｎｍ处有强的吸收峰。用可调谐染料激光作泵浦源，实现了低阈值、高效率的激光运转。在透射率１５％的平面平行腔情况下，斜率效率为５０％，阈值为２ｍＪ。倍频光中心波长为５３６．０ｎｍ，线宽为１．４ｍｍ。本文还对Ｎｄ：Ｓ－ＶＡＰ晶体可作为ＬＤ泵浦的小型激光器的工作物质等问题进行了讨论。