Mode beating in spot-size converter lasers

An anomalous modulation in the wavelength spectrum has been observed in lasers with spot-size converters. This intensity modulation is shown to be caused by beating between the fundamental lasing mode and radiation modes in the taper. This results in a periodic modulation in the net gain spectrum, which causes wavelength jumps between adjacent net gain maxima, and a drive current dependent spectral width that is expected to affect system performance. The amplitude of this spectral modulation is reduced significantly by either using an angled rear-facet which reflects the beating radiation modes away from the laser axis, or by using a nonlinear, adiabatic taper.     

Potential for micromachined actuation of ultra-wide continuously tunable optoelectronic devices

Tailored scaling represents a principle of success that, both in nature and in technology, allows the effectiveness of physical effects to be enhanced. Mutation and selection in nature are imitated in technology, e.g. by model calculation and design. Proper scaling of dimensions in natural photonic crystals and our fabricated artificial 1D photonic crystals (DBRs, distributed Bragg reflectors) enable efficient diffractive interaction in a specific spectral range. For our optical microsystems we illustrate that tailored miniaturization may also increase the mechanical stability and the effectiveness of spectral tuning by thermal and electrostatic actuation, since the relative significance of the fundamental physical forces involved considerably changes with scaling. These basic physical principles are rigorously applied in micromachined 1.55-μm vertical-resonator-based devices. We modeled, implemented and characterized 1.55-μm micromachined optical filters and vertical-cavity surface-emitting laser devices capable of wide, monotonic and kink-free tuning by a single control parameter. Tuning is achieved by mechanical actuation of one or several air-gaps that are part of the vertical resonator including two ultra-highly reflective DBR mirrors of strong refractive index contrast: (i) Δn=2.17 for InP/air-gap DBRs (3.5 periods) using GaInAs sacrificial layers and (ii) Δn=0.5 for Si₃N₄/SiO₂ DBRs (12 periods) with a polymer sacrificial layer to implement the air-cavity. In semiconductor multiple air-gap filters, a continuous tuning of >8% of the absolute wavelength is obtained. Varying the reverse voltage (U=0–5 V) between the membranes (electrostatic actuation), a tuning range of >110 nm was obtained for a large number of devices. The correlation of the wavelength and the applied voltage is accurately reproducible without any hysteresis. In two filters, tuning of 127 and 130 nm was observed for about ΔU=7 V. The extremely wide tuning range and the very small voltage required are record values to the best of our knowledge. For thermally actuated dielectric filters based on polymer sacrificial layers, Δλ/ΔU=-7 nm/V is found. Received: 10 May 2002 / Published online: 8 August 2002     

Material tensor parameters of LiNbO3 relevant for electro- and elasto-optics

The complete set of self-consistent parameters of nominally undoped LiNbO₃ crystals of congruent composition that describe the electro-optic, piezoelectric, elasto-optic, elastic, and dielectric response has been determined by numerically evaluating available measurements. The parameters were determined at room temperature and consist of the low-frequency clamped dielectric constants ε^S _ij, elastic stiffness constants at constant electric field C^E _ijkl, piezoelectric stress coefficients e_ijk, elasto-optic constants at constant electric field p^E _ijkl, and clamped electro-optic coefficients r^S _ijk. It is shown that the complete set is required for calculating the effective electro-optic coefficients and dielectric constants in photorefractive applications of LiNbO₃. Received: 4 January 2002 / Revised version: 1 February 2002 / Published online: 14 March 2002     

Magnetic anisotropy of textured CrO2 thin films investigated by X-ray magnetic circular dichroism

Highly a-axis-textured CrO₂ films have been deposited on Al₂O₃ (0001) substrates by chemical vapor deposition. CrO₂ has been found to have highly a-axis (010)-oriented columnar growth on a Cr₂O₃ (0001) initial layer. The six-fold surface symmetry of the Cr₂O₃ initial layer leads to three equivalent in-plane orientations of the a-axis-oriented CrO₂ unit cell. We report Cr L_2,3 X-ray magnetic circular dichroism data along the surface normal and at 60° off-normal sample orientation. For a 60° sample alignment, a strong increase of the projected orbital moment could be observed for unoccupied majority t_2g states using moment analysis. Therefore, the c axis is identified as the intrinsic magnetic easy axis of CrO₂. In addition, a small spin moment and a very strong magnetic dipole term T_z have been found. Received: 8 January 2002 / Accepted: 8 January 2002     

相位差与q变形广义相干叠加态的压缩特性

对于q变形的非简谐振子广义相干态的叠加态β〉+eiφβeiδ〉,其量子涨落的可能高阶压缩阶数可以表示为k≠2πn/δ,这里n是整数.当δ=π时,压缩阶数不能是偶数即只能是奇数,这正是q变形非简谐振子广义奇偶相干态的结果.由此表明参数相位差δ对决定q变形的非简谐振子广义相干态叠加态的高阶压缩阶数起决定性作用.     

The time recovery of the spectroscopic properties of heavily irradiated CdZnTe and CdTe detectors

The time recovery of the spectroscopic capabilities of CdZnTe and CdTe detectors, irradiated with increasing doses of high- and low-energy neutrons, as well as electrons, has been investigated by studying their spectroscopic behavior at different photon energies using leakage current measurements and PICTS (photo-induced current transient spectroscopy) analysis. The detectors were stored at room temperature for up to one year to study the time evolution of their spectroscopic performance and to correlate it with the presence of defective states in the material. We have observed a clear improvement in the material’s detection properties with time, though only in those detectors which have not been severely degraded by the irradiation. The recovery can be associated with a decrease in the concentration of some defective states, thus allowing the assessment of the crucial role these play in determining the charge collection processes in the material and its spectroscopic capabilities. Received: 1 August 2001 / Accepted: 3 August 2001 / Published online: 20 December 2001     

The Properties of Light Pressure Force with High Order in Laser Fields

1　Ｉｎｔｒｏｄｕｃｔｉｏｎ　　Ｉｎｒｅｃｅｎｔｙｅａｒｓ,ｂｏｔｈｔｈｅｔｈｅｏｒｅｔｉｃａｌａｎｄｅｘｐｅｒｉｍｅｎｔａｌｉｎｖｅｓｔｉｇａｔｉｏｎｓｏｎｌａｓｅｒｃｏｏｌｉｎｇａｎｄｔｒａｐｐｉｎｇｈａｖｅｂｅｃｏｍｅｏｎｅｏｆｔｈｅｍａｊｏｒｆｉｅｌｄｓｉｎａｔｏｍｉｃ,ｍｏｌｅｃｕｌａｒａｎｄｏｐｔｉｃａｌ ｐｈｙｓｉｃｓ[1～ 8] .Ｔｈｅｄｅｖｅｌｏｐｍｅｎｔｏｆｌａｓｅｒｃｏｏｌｉｎｇａｎｄｔｒａｐｐｉｎｇｔｅｃｈｎｏｌｏｇｙｉｓｉｍｐｏｒｔａｎｔｆｏｒｔｈｅａｐｐｌｉｃａｔｉｏｎｓｓｕ…     

The treatment of nonhomogeneous Dirichlet boundary conditions by thep-version of the finite element method

Summary The paper addresses the problem of the implementation of nonhomogeneous essential Dirichlet type boundary conditions in thep-version of the finite element method.Partially supported by the Office of Naval Research under Grant N-00014-85-K-0169Research partially supported by the Air Force Office of Scientific Research, Air Force Systems Command, USAF, under Grant Number AFOSR 85-0322     

Über die abstandsverträglichen Abbildungen auf dem Kreis und auf der reellen Geraden

Zusammenfassung. Eine Abbildung zwischen metrischen R?umen hei?t abstandsvertr?glich, wenn der Abstand der Bilder zweier Punkte nur vom Abstand der Punkte selbst abh?ngt. Wir zeigen, dass eine Abbildung genau dann abstandsvertr?glich ist, wenn der Cauchyschen Funktionalgleichung genügt, also ein Endomorphismus der Gruppe ist. Ein entsprechendes Resultat gilt auch für die abstandsvertr?glichen Abbildungen des Kreises (mit der Multiplikation komplexer Zahlen als Gruppenverknüpfung). Damit kann man sowohl alle messbaren abstandsvertr?glichen Abbildungen von bzw. in sich angeben, als auch einen Nachweis für die Existenz nichtmessbarer abstandsvertr?glicher Abbildungen auf und erbringen. Eingegangen am 20. Juni 2001 / Angenommen am 13. September 2001     

Threshold electrical switching in As45Te55-xInx and As50Te50-xInx glasses

The electrical switching behaviour of As₄₅Te_55-xIn_x (5≤x≤15) and As₅₀Te_50-xIn_x (2.5≤x≤11.5) has been studied over a wide range of compositions. These glasses are found to exhibit threshold switching. The composition dependence of switching voltage (V_t) has been found to exhibit a change in slope and a local minimum at compositions x=10 and 12.5 for As₄₅Te_55-xIn_x and x=7.5 and 10.8 for As₅₀Te_50-xIn_x, respectively. The slope change in V_t verses x and the local minimum have been identified using two network topological effects, namely the rigidity percolation threshold and the chemical threshold. Received: 23 August 2001 / Accepted: 27 August 2001 / Published online: 11 February 2002