拉曼放大器中放大的自发拉曼散射与拉曼开-关增益关系的研究

研究了拉曼放大器中放大的自发拉曼散射对拉曼开－关增益的影响，并提出了一种利用自发拉曼散射谱来调整拉曼放大器位曼开－关增益平坦的方法，实验采用4个波长为14xx nm的激光二极管作为抽运源，75km的G．652光纤作为传输介质，获得了C波段附近的光放大，同时对此给出了合理的理论解释。     

Diode-pumped 671 nm laser frequency doubled by CPM LBO

A design of diode-pumped high-efficiency Nd:YVO₄/LBO red laser is reported. Using critical phase-matching (CPM) LBO, 671 nm red laser was obtained from 1342 nm light by intracavity frequency doubling. With an incident pump laser of 800 mW, using type-I and type-II CPM LBO, 97 and 52 mWTEM₀₀ mode red laser outputs were obtained, with optical-to-optical conversion efficiencies of up to 12.1% and 6.5%, respectively.     

动态激光衍射法测量细丝直径

基于夫琅禾费衍射理论和巴比涅互补原理,提出了利用激光衍射对细丝直径进行动态测量的方法.该方法具有测量精度高、速度快、非接触、使用方便且易于微机联接实现自动化测量等优点.     

The influence of pulse duration on the stress levels in ablation of ceramics: A finite element study

We present a finite element model to investigate the dynamic thermal and mechanical response of ceramic materials to pulsed infrared radiation. The model was applied to the specific problem of determining the influence of the pulse duration on the stress levels reached in human dental enamel irradiated by a CO₂ laser at 10.6 μm with pulse durations between 0.1 and 100 μs and sub-ablative fluence. Our results indicate that short pulses with durations much larger than the characteristic acoustic relaxation time of the material can still cause high stress transients at the irradiated site, and indicate that pulse durations of the order of 10 μs may be more adequate both for enamel surface modification and for ablation than pulse durations up to 1 μs. The model presented here can easily be modified to investigate the dynamic response of ceramic materials to mid-infrared radiation and help determine optimal pulse durations for specific procedures.     

Spectral and temporal characteristics of metallic nanoparticles produced by femtosecond laser pulses

We study the time of flight optical emission from titanium and tungsten nanosized particles, generated through femtosecond laser-matter interaction in vacuum, in the wavelength spectral range from 300 to 900 nm. Typical spectra consist of broadband structureless signals similar to black body emission from a macroscopic object. Nanoparticles temperature, deduced from their emission spectra, decreases drastically as a function of their time of arrival at a given distance from the target. This behaviour is seen to be independent of individual particle velocities.     

Fluorescence and absorption of polystyrene exposed to UV laser radiation

We show that when polystyrene is exposed (for 15–60 sec) to a UV laser light beam (λ = 248 nm), its absorption and luminescent properties change significantly. In the irradiated polymer, optical centers are formed with absorption bands in the 280–460 nm region and fluorescence bands in the 330–520 nm region. We have established the chemical structure of the optical centers for fluorescence of polystyrene. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 1, pp. 54–58, January–February, 2006.     

Fundamental processes in long air gap discharges

The development of atmospheric lightning is initiated and sustained by the formation in virgin air of ‘streamer corona’ and ‘leader’ discharges, very similar to those observed in laboratory long sparks. Therefore, the experimental and theoretical investigations of these laboratory discharges have become of large interest to improve the physical knowledge of the lightning process and to develop self-consistent models that could be applied to new protection concepts.In the present paper the fundamental processes of the subsequent phases of long air gap discharges are analyzed, from the first corona inception and development to the leader channel formation and propagation. For all these processes simulations models are discussed that have been essentially derived and simplified by the authors, in order to develop sequential time-dependent simulation of the laboratory breakdown, with both positive and negative voltages. The possibility of extending these models to the case of natural lightning is discussed in the companion paper, presented in this same volume. To cite this article: I. Gallimberti et al., C. R. Physique 3 (2002) 1335–1359.     

Rehabilitation of the Gauss-Jordan algorithm

Summary In this paper a Gauss-Jordan algorithm with column interchanges is presented and analysed. We show that, in contrast with Gaussian elimination, the Gauss-Jordan algorithm has essentially differing properties when using column interchanges instead of row interchanges for improving the numerical stability. For solutions obtained by Gauss-Jordan with column interchanges, a more satisfactory bound for the residual norm can be given. The analysis gives theoretical evidence that the algorithm yields numerical solutions as good as those obtained by Gaussian elimination and that, in most practical situations, the residuals are equally small. This is confirmed by numerical experiments. Moreover, timing experiments on a Cyber 205 vector computer show that the algorithm presented has good vectorisation properties.     

在不同激光脉宽下的高次谐波

用数值计算方法计算了不同强激光脉冲宽度下高次谐波的产生.我们发现对于激光场强度不高,不能有效电离初态的激光场,长脉冲宽度可以更有效产生高次谐波;而对于高场强的激光场,由于它能够在几个光学周期之内把原子的初态全部电离,所以短脉冲的激光场能够更有效产生高次谐波.     

Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system

Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation.