Synthesis,characterization, and thermal properties of novel silicon 1,1,3,3-tetramethylguanidinate derivatives and use as single-source chemical vapor deposition precursors

A series of chemical vapor deposition (CVD) precursors have been synthesized by a single-step reaction of 1,1,3,3-tetramethylguanidine and a variety of silicon chlorides. The structures of the 1,1,3,3-tetramethylguanidinate-based compounds were verified by ¹H NMR, ¹³C NMR, XPS, EI-MS, and elemental analysis. The thermal stability, transport behavior, and vapor pressures of these compounds were evaluated by simultaneous thermal analyses (STA). These compounds are highly stable and those in liquid form are very volatile. Silicon carbonitride (SiCN) thin films were prepared by using bis (tetramethylguanidine)-dimethyl-silane as the precursor in helicon wave plasma chemical vapor deposition (HWP-CVD). The properties of the films were investigated by SEM, AFM, and XPS. The results showed that the films have good uniformities, low friction coefficient, and high hardness, enabling the films for fabrication of semiconductor devices.     

Synthesis by FVT and Characterization of Unhindered Silanethiones

The retro-ene reaction of allylthio- and propargylthiosilanes led, under flash vacuum thermolysis (FVT) conditions, to unhindered silanethiones, characterized by their derivatives, and also directly by coupling of the FVT with gas-phase spectrometries. Monomeric silicon oxysulfide has been generated similarly. The unsubstituted silanethione was not obtained, but dehydrogenated into silicon monosulfide during FVT.     

Studies on the Silylation Reaction of α,β-Epoxy Esters Synthesized by Darzen's Condensation Reaction

Me₃SiCl/Mg in HMPA was used for silylation of α,β-epoxy esters resulting in the corresponding β-silylated esters in a one pot reaction with reasonable yields.     

One-pot synthesis of α-trifluoromethylstyrenes from aryl ketones and the Ruppert–Prakash reagent

A new synthesis of α-trifluoromethylstyrenes from aromatic ketones and (trifluoromethyl) trimethylsilane is described. The reaction involves nucleophilic trifluoromethylation and elimination of trimethylsilanol, which are performed within one reaction flask.     

Carrier removal by implanted IONS in GaAs

Abstract

A model for calculation of the range distribution of energetic ions with taking into account the channeling effect is proposed. The measurement of the depth distributions of boron ions in silicon crystals implanted at 13.6 and 91 MeV revealed significant difference between the measured and the calculated range profiles when the channeling effects have not been included in the calculation. In spite of deminishing the critical angles of channeling with growing ion energy the probability of the capture of ions into the channeling regime is significant in case of high energy implantation even when the incident angles are 7–10° off the main crystallographic directions.     

Carbenes,related intermediates,and small-sized cycles: contribution from Professor Nefedov’s laboratory

The review summarizes some of the most prominent results obtained in the laboratory headed by Academician Oleg M. Nefedov at the N. D. Zelinsky Institute of Organic Chemistry of the Russian Academy of Sciences in the field of chemistry of carbenes, their heavy analogs, and related intermediates, as well as small-sized cycles. Those include elaboration of safe methodology of cyclopropanation using diazomethane, development and extension of synthetic applications of diazoesters and other diazo compounds in the preparation of valuable chemical products, design of functionalized alkynylcyclopropanes on the basis of alkynylcarbene reactions, creation of versatile synthetic approaches to preparation of various practically useful fluoroorganic compounds on the basis of reactions of fluorocarbenes, development of synthetic applications of heavy carbene analogs and synthesis of small-sized heterocycles containing silicon and germanium atoms, analysis of mechanisms of some important reactions of carbenes, their analogs and related intermediates on the basis of physicochemical studies, direct spectroscopic studies of various labile intermediates of chemical reactions.     

Functional Fe–Pd nanomaterials synthesized by template-assisted methods

In this work, we highlight our recent progress in the synthesis and characterization of functional nanomaterials based on Fe–Pd ferromagnetic alloys by means of template-assisted deposition techniques employing highly ordered nanoporous alumina membranes, such as ordered arrays of nanowires and antidots thin films. Special attention is paid on their basic magnetic properties, such as coercivity, remanence and magnetic anisotropy, and their dependence on the microstructure and morphological parameters of the ordered arrays.     

IPr3Si3Cl5+: A Highly Reactive Cation with Silanide Character

The reaction of a metastable SiCl₂ solution with the sterically less‐demanding carbene N,N‐diisopropylimidazo‐2‐ylidene (IPr) yields the salt [(IPr₃Si₃Cl₅)⁺]Cl^? ( 1 ‐Cl), containing a silyl cation with a Si₃ backbone. Salt 1 is highly reactive, but it can be used as a reagent in deuterated dichloromethane, whereby dehalogenation with Me₃SiOTf (OTf=O₃SCF₃) gives the dicationic silyl halide [(IPr₃Si₃Cl₄)]²⁺ 2 . Quantum chemical calculations show that the HOMO is localized at the negatively charged central silicon atom of 1 and 2 , and thus although both compounds are cations they are better described as silanides, which was also corroborated by NMR investigations.     

冶金法生产太阳能级硅的除硼方法、技术及工艺

太阳能作为一种绿色可再生能源受到了广泛关注,而杂质去除是从冶金级硅中获得太阳能级硅所需的纯化过程,对硅基太阳能电池的制备至关重要。冶金法制备太阳能级多晶硅新工艺技术由于其能耗低、成本低和污染少等优点,成为研究开发的热点,但如何有效地去除硼是我们面临的最严峻的挑战之一。本文综述了硼的热力学和动力学性质(溶解度、扩散率、扩散系数、传质系数和活度系数)以及近年来除硼的相关课题研究(吹气、炉渣处理、等离子体处理、酸浸和溶剂精炼)。研究发现,溶剂精炼是一种很有前途的获取高纯硅的方法,硅的富集率以及硼的去除率均可达到90%以上,而添加剂能够加强硼化物的形成和析出来改进除硼工艺,且后续几乎可被完全消除,不会对精炼硅造成污染,这将更加有效除硼并增加工艺实用性。最后本文对几种除硼工艺进行了比较分析,并对冶金法的应用前景进行了展望。