Development of novel flexible black silicon

We report a new type of black silicon: flexible black silicon. A silicon-on-insulator (SOI) wafer is irradiated by automatically scanning a femtosecond laser and then split by etching out the SOI silica middle layer. Large-area, uniform micro spikes on the surface of a very thin flexible silicon layer are obtained. The black silicon shows good flexibility and optical properties. The absorption spectrum of the flexible black silicon is as high as 97% in the visible and insensitive to the change of the incident angle of the light, which makes it a potential good candidate as an absorber for the solar-thermo generator.     

高压多脉冲硅堆汇流结构

利用形成线并联的方法产生高压三脉冲,需要在形成线和加速腔负载间串联硅堆隔离网络,以隔离不同形成线间的相互影响,并将不同形成线先后产生的高压脉冲汇流成三脉冲串传输到加速腔。硅堆放置于封闭的油箱中,箱体结构的设计将直接影响汇流后三脉冲的波形品质和硅堆的使用寿命。通过对高压硅堆内部电势分布的模拟分析和实验验证,明确了影响硅堆使用寿命的主要原因;设计实验测量了汇流结构各部分对汇流脉冲前沿的影响程度,综合分析汇流结构对硅堆使用寿命的影响,明确了汇流结构的优化方向,并在此基础上确定了神龙二号三脉冲直线感应加速器硅堆汇流结构的最终设计。     

Investigations on Pd:SnO2/porous silicon structures for sensing LPG and NO2 gas

P-type porous silicon (PS) structure has been prepared by anodic electrochemical etching process under optimized conditions. Photoluminescence studies of the PS structure show emission at longer wavelengths (red) for the excitation at 365 nm. Scanning electron microscope investigations of the PS surface confirm the formation of uniform porous structure, and the pore diameter have been estimated as 25 μm. Pd:SnO₂/PS/p-Si heterojunction with top gold ohmic contact developed by conventional methods has been used as the sensor device. Sensing properties of the device towards liquefied petroleum gas (LPG) and NO₂ gas have been investigated in an indigenously developed sensor test rig. The response and recovery characteristics of the sensor device at different operating temperatures show short response time for LPG. From the studies, maximum sensitivity and optimum operating temperature of the device towards LPG and NO₂ gas sensing has been estimated as 69% at 180 °C and 52% at 220 °C, respectively. The developed sensor device shows a short response time of 25 and 57 s for sensing LPG and NO₂ gases, respectively. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006.     

基于BiFeO_3/ITO复合膜表面钝化的黑硅太阳电池性能研究

采用金属银辅助化学刻蚀法在制绒的硅片表面刻蚀纳米孔形成微纳米双层结构,以期获得高吸收率的太阳能电池用黑硅材料.鉴于微纳米结构会在晶硅表面引入大量的载流子复合中心,利用磁控溅射技术在黑硅太阳电池表面制备了BiFeO_3/ITO复合膜,并对其表面性能和优化效果进行了探索.实验制备的具有微纳米双层结构的黑硅纳米线长约180—320 nm,在300—1000 nm波长范围内入射光反射率均在5%以下.沉积BiFeO_3/ITO复合薄膜后的黑硅太阳能电池反射率略有提高,但仍然具有较强的光吸收性能;采用BiFeO_3/ITO复合膜的黑硅太阳能电池开路电压和短路电流密度分别由最初的0.61 V和28.42 mA/cm~2提升至0.68 V和34.57 mA/cm~2,相应电池的光电转化效率由13.3%上升至16.8%.电池综合性能的改善主要是因为沉积BiFeO_3/ITO复合膜提高了电池光生载流子的有效分离,从而增强了黑硅太阳电池短波区域的光谱响应,表明具有自发极化性能的BiFeO_3薄膜对黑硅太阳能电池的表面性能可起到较好的优化作用.     

少子寿命和表面形貌与多孔硅发光性能的关系

研究了不同时间腐蚀的多孔硅的光致发光性能与多孔硅的表面形貌和少子寿命之间的关系。结果表明,多孔硅的发光来自与氧空位有关的缺陷,而多孔硅表面的氢原子能够钝化多孔硅表面的非辐射中心从而提高多孔硅的发光效率。多孔硅的空隙度随腐蚀时间的延长而增大,这也导致了多孔硅的少子寿命的降低,从而造成多孔硅的光致发光效率随多孔硅空隙度的增大以及少子寿命的降低而提高。另外,原子力显微照片表明长时间的腐蚀使多孔硅表面层被化学腐蚀,从而降低了多孔硅表面的粗糙度。     

硅衬底生长的InGaN/GaN多层量子阱中δ型硅掺杂n-GaN层对载流子复合过程的调节作用

为了解决在单晶硅衬底上生长的InGaN/GaN多层量子阱发光二极管器件发光效率显著降低的问题,使用周期性δ型Si掺杂的GaN取代Si均匀掺杂的GaN作为n型层释放多层界面间的张应力。采用稳态荧光谱及时间分辨荧光谱测量,提取并分析了使用该方案前后的多层量子阱中辐射/非辐射复合速率随温度（10~300 K）的变化规律。实验结果表明引入δ-Si掺杂的n-GaN层后,非辐射复合平均激活能由（18±3）meV升高到（38±10）meV,对应非辐射复合速率随温度升高而上升的趋势变缓,室温下非辐射复合速率下降,体系中与阱宽涨落有关的浅能级复合中心浓度减小,PL峰位由531 nm左右红移至579 nm左右,样品PL效率随温度的衰减受到抑制。使用周期性δ型Si掺杂的GaN取代Si均匀掺杂的GaN作为生长在Si衬底上的InGaN/GaN多层量子阱LED器件n型层,由于应力释放,降低了多层量子阱与n-GaN界面、InGaN/GaN界面的缺陷密度,使得器件性能得到了改善。     

Structural and bonding properties of ScSi_n~-(n=2～6) clusters:photoelectron spectroscopy and density functional calculations

Anion ion photoelectron spectroscopy and density functional theory (DFT) are used to investigate the electronic and structural properties of ScSi_n^- (n=2sim6) clusters and their neutrals. We find that the structures of ScSi_n^- are similar to those of Si_n+1^-. The most stable isomers of ScSi_n^- cluster anions and their neutrals are similar for n=2, 3 and 5 but different for n=4 and 6, indicating that the charge effect on geometry is size dependent for small scandium-silicon clusters. The low electron binding energy (EBE) tails observed in the spectra of ScSi_4,6^- can be explained by the existence of less stable isomers. A comparison between ScSi_n^- and VSi_n^- clusters shows the effects of metal size and electron configuration on cluster geometries.     

Study of photoconductivity and photoluminescence of organic/porous silicon complexes

In this paper, time-varying photoconductivity (PC) and the photoluminescence (PL) of different complexes were studied. Due to thick polymer layer hindering light penetrating into porous silicon (PS) layer, intrinsic PS luminescence in polymer/PS system disappeared. The physical origin of PL may be related to the recombination mechanisms involving surface defect states such as silicon oxide, siloxene. Due to carrier transfer controlled by different energy barrier, different devices prepared from different doped Si wafer showed opposite current-voltage characteristic.     

Surface texturing of Si, porous Si and TiO2 by laser ablation

Excimer laser ablation at 308 nm has been used to texture the surfaces of a variety of materials of interest for optoelectronic and biotechnological applications. Using a range of pre- and post-processing methods, we are able to produce nano-, micro- and meso-scale features over large areas rapidly in materials such as crystalline Si, porous silicon and TiO₂. Texturing of porous silicon leads to the growth of crystalline dendritic structures, which distinguishes them dramatically from the conical pillars formed from crystalline silicon. Regular arrays of Si microdots are formed by irradiating a Si surface pre-covered with a Cr thin film grating. Nano-crystalline porous TiO₂ films are easily ablated or compacted with laser irradiation. However, at low enough laser fluence, surface roughening without complete loss of porosity is possible.     

Tens of GHz Tantalum pentoxide‐based micro‐ring all‐optical modulator for Si photonics

A tantalum pentoxide‐based (Ta₂O₅‐based) micro‐ring all‐optical modulator was fabricated. The refractive index inside the micro‐ring cavity was modified using the Kerr effect by injecting a pumped pulse. The transmittance of the ring resonator was controlled to achieve all‐optical modulation at the wavelength of the injected probe. When 12 GHz pulses with a peak power of 1.2 W were coupled in the ring cavity, the transmission spectrum of the Ta₂O₅ resonator was red‐shifted by 0.04 nm because of the Kerr effect. The relationship between the modulation depth and gap of the Ta₂O₅ directional coupler is discussed. An optimized gap of 1100 nm was obtained, and a maximum buildup factor of 11.7 with 84% modulation depth was achieved. The nonlinear refractive index of Ta₂O₅ at 1.55 μm was estimated as 3.4 × 10^?14 cm²/W based on the Kerr effect, which is almost an order of magnitude higher than that of Si₃N₄. All results indicate that Ta₂O₅ has potential for use in nonlinear waveguide applications with modulation speeds as high as tens of GHz.