SinH/SinH-(n=3～8)的结构和电子亲合能的研究

选用四种不同的密度泛函理论方法(B3LYP，B3P86，BLYP，BP86)，在全电子的双ξ加极化加弥散函数基组(DZP )下，对SinH／SinH^-(n=3～8)体系进行研究，获得它们的基态结构和电子亲合能。预测Si3H／Si3H^-,Si4H／Si4H^-,Si5H／Si5H^-,Si6H／Si6H^-，Si7H／Si7H^-和Si8H／Si8H^-的基态结构分别为C2v(^2B2)／C2v(1^A1)氢桥结构，Cs(^2A’)／C(^1A’)，C2v(^2B2)／C2v(^1A1)，C2v(^2B2或^2B1)／C4v(^1A1)，C5v(^2A1)／C5v(^1A1)和C5(^2A‘‘)／C3v(^1A1)。在电子亲合能方面，B3LYP方法预测的电子亲合能是最可靠的，预测Si3H，Si4H，Si5H，Si6H，Si7H和Si8H的电子亲合能分别为2．56，2．59，2．84，2．86，3．19和3．14eV。     

Electrodeposition of nanocrystalline zinc from acidic sulfate solutions containing thiourea and benzalacetone as additives

Nanocrystalline zinc coatings were produced by pulse electrodeposition in acid sulfate bath containing thiourea and benzalacetone additives and characterized by X-ray diffraction and scanning electron microscopy techniques. The influence of benzalacetone concentration and pulse peak current density on the grain size and crystallographic orientation of zinc deposits was investigated. Zinc electrodeposited from additive-free solutions or with one of the two additives is not composed of nanosized crystals. The mixture additives of thiourea and benzalacetone give rise to the formation of particle-like nanocrystalline zinc with a (10ī1) random orientation. A change in peak current density from 2 to 1 A/cm² only increases the grain size from 60 to 62 nm.     

氧化锌薄膜的电化学沉积和表征

以透明导电玻璃(TCO)为衬底，用硝酸锌水溶液作为电解液，研究了阴极还原沉积ZnO薄膜的反应机理和电化学行为. 通过改变工艺条件来控制ZnO的生长速率， 得到了粒径为10～15 nm的纳米ZnO薄膜. XRD分析显示纳米ZnO薄膜纯度高， 呈纤锌矿结构. 光学测试结果表明，在可见光区其透光度高达90%，禁带宽度为3.37 eV.     

pH sensitivity of Si--C linked organic monolayers on crystalline silicon surfaces.

The electrochemical behavior of Si--C linked organic monolayers is studied in electrolyte-insulator-Si devices, under conditions normally encountered in potentiometric biosensors, to gain fundamental knowledge on the behavior of such Si electrodes under practical conditions. This is done via titration experiments, Mott-Schottky data analysis, and data fitting using a site-binding model. The results are compared with those of native SiO(2) layers and native SiO(2) layers modified with hexamethyldisilazane. All samples display pH sensitivity. The number of Si--OH groups on the alkylated samples is calculated to be less than 0.7 % of that of a pure SiO(2) insulator, which still causes a pH sensitivity of approximately 25 mV per pH unit in the pH range: 4-7. The alkylated samples hardly suffer from response changes during up- and down-going titrations, which indicates that very little oxide is additionally formed during the measurements. The pK(a) values of all samples with monolayers (4.0-4.4) are lower than that of native SiO(2) (6.0). The long-term drift (of approximately 1 mV h(-1)) is moderate. The results indicate that biosensors composed of alkylated Si substrates are feasible if a cross-sensitivity towards pH in the sensor signal is taken into account.     

An expedient preparation of Stryker's reagent

A convenient and efficient preparation of Stryker's reagent, [Ph₃PCuH]₆, under homogeneous conditions using silanes as the reducing agent is detailed. The reaction time can be reduced to 1-2 h, and high yields of Stryker's reagent can be routinely achieved. The same method has been extended to the synthesis of [Ph₃PCuD]₆ using Ph₂SiD₂.     

纳米晶MgSO4·5Mg(OH)2·3H2O合成与表征

纳米材料由于具有表面、体积和量子尺寸效应的特殊性而受到广泛重视[1～3]. 微米级硫氧镁晶须作为塑料添加增强和阻燃剂已有报道[4～7]. 纳米晶MgSO4*5Mg(OH)2*3H2O不仅对塑料起补强作用, 而且其粒度小, 使塑料变得更致密, 强度、韧性与防水性能大大提高. 目前纳米材料的合成方法多种多样[8～10], 本文采用水热法制得纳米硫氧镁晶粒, 产物纯度高、分散性好且粒度易控制.     

ANISOTROPIC STRAIN EFFECT ON MORPHOLOGY AND ATOMIC STRUCTURE OF VICINAL Si(001) SURFACE

On vicinal Si(001) surfaces, dependence of growth morphology on the applied strain direction and formation of vacancy lines from Ag-induced missing dimer vacancies are studied. Both phenomena are intimately related to the anisotropic nature of the strain field which originates from the surface dimerization. Strain relief mechanism, reflecting on the surface morphology, is shown to be different in two orthogonal directions. Normal to the steps, step-pair bunching and waving lead to formation of hillocks and pits. Along the step direction, bending of step pairs forms a cusp which later develops into a deep groove. Toward the atomic scale, the formation of the vacancy lines is driven by the short-range attractive interaction between the vacancies in adjacent dimer rows and the long-range repulsive interaction between them in the same dimer row. A full form and magnitudes of the interactions are derived from the thermally-excited wandering of the vacancy lines formed by a nominal amount of Ag depositing onto the surface.     

石墨炉原子吸收法直接测定高温合金中硅

研究了混合基体改进剂，灰北、原子化温度以及共存元素的干扰，采用镧和钙作混合基体改进剂后，硅的灵敏度提高，抗干扰能力增强，可以用石墨炉原子吸收直接测定高温合多中硅。方法特征量为０．２ｎｇ，检出限为２．３μｇ／ｇ，对于含硅量为４００μｇ／ｇ左右的合金样品，相对标准偏差为５％左右，回收率在９０％－１１０％之间。     

Nanoclusters of Silicon and Germanium

Synthetic routes for the preparation of Si or Ge nanoclusters as gaseous species, colloids, supported composites, or as unsupported powders are reviewed along with selected characterization data. The optical properties of these and related materials, such as porous Si, are summarized with particular emphasis on photo- or electroluminescence phenomena. Research opportunities related to Si and Ge cluster chemistry are suggested.     

一种非晶硅膜改性弹性玻璃毛细管交联中等极性固定相色谱柱的制备

研究了非晶硅膜改性的弹性玻璃毛细管交联ＯＶ－１７０１中等极性固定相色谱柱。在适当温度下，采用过氧化二异丙苯（ＤＣＵＰ）游离基引发交联ＯＶ－１７０１固定液，成功地制备了交联ＯＶ－１７０１柱，该柱具有柱效高、惰性好、耐溶剂、抗腐蚀和耐高温等性能，是一种新型高性能的中等极性交联柱。