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111.
Muhammet Yürüsoy 《Applied mathematics and computation》2004,150(3):775-783
Two dimensional unsteady boundary layer equations of a general model of non-Newtonian fluids were investigated in this study. In this model, the shear stress is taken as an arbitrary function of the velocity gradient. Group classification of the equations with respect to shear stress is done using two different approaches: (1) classical theory (2) equivalence transformations. Both approaches yield identical results. It is found that the principle Lie Algebra extends only for cases of Newtonian and Power-Law flows. 相似文献
112.
KANG Zihua WANG Mingwei QIAN Jiamei RAO Jun LI Xiujuan ZHENG Tieliu WANG Xuehua 《核工业西南物理研究院年报(英文版)》2004,(1):73-76
Lower hybrid wave (LHW), electro cyclotron (EC) and neutral beam injection (NBI) etc. are the important methods of auxiliary heating. They would be devoted to the HL-2A tokamak step by step. In order to satisfy the debug of each system and the need of the experiment, the system should be equipped with high voltage pulse power (HVPP) according to the requirement. 相似文献
113.
In this paper, we examine a variant of the uncapacitated lot-sizing model of Wagner–Whitin that includes fixed charges on the stocks. Such a model is natural in a production environment where stocking is a complex operation, and appears as a subproblem in more general network design problems.
Linear-programming formulations, a dynamic program, the convex hull of integer solutions and a separation algorithm are presented. All these turn out to be very natural extensions of the corresponding results of Barany et al. (Math. Programming Stud. 22 (1984) 32) for the uncapacitated lot-sizing problem. The convex hull proof is based on showing that an extended facility location formulation is tight and by projecting it onto the original space of variables. 相似文献
114.
Unusual current‐voltage characteristics of single crystalline and bicrystalline La0.7Ca0.3MnO3 films
The current‐voltage characteristics of single crystalline and bicrystalline La0.7Ca0.3MnO3 films were measured and analyzed. Several epitaxial films, as well as 45° [001]‐tilt grain boundaries, display current‐voltage characteristics which are asymmetric with respect to polarity reversal of the bias current. One epitaxial film has a polarity dependent resistance of ~340kΩ and of ~670kΩ in forward and in reverse direction, respectively. 相似文献
115.
An analytical approach for vibration response analysis of a beam with single passive constrained layer damping (PCLD) patch is presented. The governing equation of motion of the beam is firstly derived on the basis of an energy approach and the Lagrange equation. The noval contribution is that a third admissible function is introduced to represent the longitudinal displacements of the constraining layer in the PCLD patch when the assumed-modes method is applied for discretizing the governing equation. In conventional analytical approaches, only two admissible functions are used together with a longitudinal static equilibrium equation of a section of base beam or constraining layer. Comparison of the computational results from the proposed analytical approach and the conventional analytical approach as well as a commercial FEM code reveals that the proposed analytical approach can describe the vibration responses of the damped beam more accurately for commonly used viscoelastic material (VEM) layer in the PCLD patch while the conventional analytical approach, in general, overestimates the damping effects of the PCLD patch. The advantages and disadvantages of the proposed analytical approach and conventional analytical approach are discussed through some case studies. 相似文献
116.
117.
关于非平行板电容器电容计算的讨论 总被引:4,自引:3,他引:1
用串联方法计算非平行板电容器的电容,简便地得到与其他方法相同的结果。 相似文献
118.
119.
The bias dependent interface charge is considered as the origin of the observed non-ideality in current–voltage and capacitance–voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is investigated. The results show that in non-ideal metal–semiconductor contacts the interface charge function depends on the interface disorder parameter, density of defects, barrier pinning parameter and the effective gap center. The theoretical predictions are tested against several sets of published experimental data on bias dependent ideality factor and excess capacitance in various metal–semicoductor systems. 相似文献
120.
F-H实验仪与光栅光谱仪连用观测253.7nm谱线 总被引:1,自引:0,他引:1
通过F-H实验仪和光栅光谱仪的连用,可实时观测汞原子从6s6s1So态激发到6s6sSP1态,退激时,辐射出能量为4.9eV的光量子,其波长为253.7nm. 相似文献