单电子晶体管-金属氧化物半导体场效应晶体管多峰值负微分电阻器件

传统的共振隧穿二极管的多峰值负微分电阻器件的峰值数目受到限制，由单电子器件和传统的金属氧化物半导体场效应晶体管(MOSFET)器件组成的多峰值负微分电阻器件在原理上具有无穷多个峰值，并且MOSFET使单电子晶体管(SET)的峰值和谷值电流大小受其源漏电压的影响减小.利用这种多峰值负微分电阻器件实现了多值存储器，该存储器原理上是无穷多值的.并且利用它的折叠的I-V特性，实现了一个4位的Flash A/D转换器，与传统的Flash A/D转换器相比，SET-MOSFET的A/D转换器大大地简化了电路. 关键词： 库仑阻塞 库仑振荡 负微分电阻 多值存储器     

相变型半导体存储器研究进展

文章系统地介绍了相变型半导体存储器的原理、相变材料、特点、器件结构设计、研究现状及面临的几个关键器件工艺问题．C—RAM由于具有非易失性、循环寿命长、元件尺寸小、功耗低、可多级存储、高速读取、抗辐照、耐高低温、抗振动、抗电子干扰和制造工艺简单等优点，被认为最有可能取代目前的FLASH、DRAM和SRAM而成为未来半导体存储器主流产品．     

Does phenazine form triplet excimer and dimer anion radical?

Laser flash photolysis of phenazine (PZ) solution reveals the existence of a stable species with a long lifetime at 380 nm in addition to the usual triplet PZ at 440 nm. The former is suggested to be due to formation of triplet PZ excimer. The triplet excimer also undergoes photoinduced electron transfer with some aromatic amines. The formation of PZ dimer anion radical and amine cation radicals are confirmed by external magnetic field effect studies. Measurement of B_1/2, which estimates hyperfine present in the system, also supports this assignment.     

On spurious and corrupted multifractality: The effects of additive noise, short-term memory and periodic trends

We study the performance of multifractal detrended fluctuation analysis (MF-DFA) applied to long-term correlated and multifractal data records in the presence of additive white noise, short-term memory and periodicities. Such additions and disturbances that can be typically found in the observational records of various complex systems ranging from climate dynamics to physiology, network traffic, and finance. In monofractal records, we find that (i) additive white noise hardly results in spurious multifractality, but causes underestimated generalized Hurst exponents h(q) for all q values; (ii) short-range correlations lead to pronounced crossovers in the generalized fluctuation functions F_q(s) at positions that decrease with increasing moment q, thus causing significantly overestimated h(q) for small q and spurious multifractality; (iii) periodicities like seasonal trends (with standard deviations comparable with the one of the studied process) result in spurious “reversed” multifractality where h(q) increases with increasing q (except for very short time windows). We also show that in multifractal cascades moderate additions of noise, short-range memory, or periodic trends cause flawed results for h(q) with q<2, while h(q) with q>2 remains nearly unchanged.     

The Role of Pitch Memory in Pitch Discrimination and Pitch Matching

Accurate control of vocal pitch (fundamental frequency) requires coordination of sensory and motor systems. Previous research has supported the relationship between perceptual accuracy and vocal pitch matching accuracy. The purpose of this study was to investigate the role of memory for pitch in pitch matching and pitch discrimination ability. Three experimental tasks were used. First, a pitch matching task was completed, in which the participants listened to target tones and vocally matched the pitch of the tones. The second task was a pitch discrimination task that required the participants to judge the pitch (same or different) of complex tone pairs. The third task was pitch discrimination with memory interference task that was similar to the pitch discrimination task except interference tones were added. Results of the pitch matching and pitch discrimination tasks yielded a significant correlation between these values. When there was memory interference, pitch discrimination ability was poorer, and there was no significant correlation between pitch discrimination and pitch matching. These results support earlier findings of a relationship between pitch discrimination and pitch matching abilities. The results also suggest a possible role of pitch memory in both tasks. These findings may have implications for abilities related to accurate pitch control.     

Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE _c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE _G =0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E _c ). From these results, it is suggested that the PEN-FET becomes a memory device.     

Cu对Ni50Mn36In14相变和磁性的影响

文章研究了Cu替代部分Ni对铁磁性形状记忆合金Ni₅₀Mn₃₆In₁₄相变和磁性的影响规律. 研究表明,在Ni_50-xCu_xMn₃₆In₁₄中,随着Cu含量的增加,相变温度逐渐降低. Cu含量低于5%时,奥氏体的磁性强于马氏体的磁性, 母相和马氏体相的饱和磁化强度的差值ΔM随着Cu含量的增加而增大. 当Cu含量x=4.5时, ΔM迅速增加到80 emu/g, 并在该材料中观察到了磁场驱动的马氏体到奥氏体的转变,显示了该材料作为磁驱动磁电阻材料的潜在应用前景.当Cu含量高于5%时,奥氏体保持铁磁状态, 马氏体相由反铁磁状态变为铁磁状态,马氏体的磁性强于奥氏体的磁性, ΔM大大削弱,磁场驱动性质消失.     

利用短期心脏记忆消除螺旋波和时空混沌

在Luo-Rudy的心脏模型中引入了记忆效应, 该记忆效应表现为膜间电压的延迟耦合. 研究了记忆效应对螺旋波的影响, 数值模拟结果表明:心脏记忆可导致螺旋波无规则漫游;当延迟时间适当选取时, 增加记忆强度会导致螺旋波的频率减小, 如果记忆强度超过临界值, 心脏记忆效应还可以使螺旋波和时空混沌消失, 因为含时外行钾离子电流被心脏记忆过度抑制.     

Dielectric-breakdown-like forming process in the unipolar resistance switching of Ta2O5−x thin films

We report unipolar resistance switching (URS) in Ta₂O_5−x thin films. The current increased suddenly when we applied voltages up to 5-7 V to the pristine state of Pt/Ta₂O_5−x/Pt, Ni/Ta₂O_5−x/Pt, and Ti/Ta₂O_5−x/Pt cells. Just after this forming process, we observed a repetitive URS occurring independently of the electrodes. We found that the required voltages for the forming process did not depend on the top electrode type, but on the film thickness. These results suggest that the forming process is driven by a dielectric-breakdown-like phenomenon, and that URS occurs due to the formation and rupture of conducting channels inside the Ta₂O_5−x thin film.     

同心度对杆箍缩二极管物理特性的影响

闪光X射线照相是获得高凝聚态物质内部物理图像的重要手段,阳极杆箍缩二极管是X射线源的重要组成部分之一,其设计直接影响X射线源稳定性。由于受装置结构及真空等因素的影响,使得阴阳极几何中心同心存在一定的困难。因此,评估同心偏差对二极管物理特性的影响,对提高闪光X射线源稳定性具有重要的意义。针对阴阳极几何中心同心偏差问题开展实验研究,分别取三种同心偏差度(小于1%,15.02%和22.92%)状态。在1 MV电压下获得了不同同心偏差度下二极管电参数特性,并在此基础上结合理论模型分析了同心偏差度对二极管物理特性及电极等离子体扩散速度的影响。研究结果表明,随着同心偏差度增加,磁绝缘阶段阻抗下降率及等离子体扩散速度呈非线性增加,同时造成该阶段二极管阻抗与脉冲驱动源输出阻抗失配严重,降低了二极管与脉冲驱动源的能量耦合效率。