石墨炉内石墨探针表面上的原子化机理研究 Ⅳ钒的原子化机理

本文通过X-射线衍射分析(XRD),扫描电子显微镜分析(SEM),化学分析光电子能谱分析(ESCA),并结合原子吸收测量,研究了钒在普通石墨管中石磨探针表面上发生的固相化学反应。结果表明,钒化合物在灰化阶段即可转化为热稳定性较高的碳化物,原子化的最后步骤为碳化物的热分解。     

同轴电极结构下真空放电等离子体生成及传播特性

采用放电电流为100~300 A、持续时间为13 s的单脉冲电源,设计了两种同轴电极结构作为放电阳极,分别为筒状电极、喷嘴状电极。利用MAXWELL 3D电场仿真软件对两种电极结构下的电场分布进行了仿真分析,并采用探针法对放电生成的等离子体的参数进行了测量,分析讨论了同轴电极结构对真空放电等离子体生成特性的影响。选取喷嘴状电极结构作为阳极,分别测量了采用铅、铝、铜三种材质的阴极时生成的等离子体的扩散速度及能量。实验与仿真结果表明:当阳极为喷嘴状电极时阴极尖端的电场强度较大,测得放电电流较大,击穿电压较低,等离子体密度也较大;采用铝材质阴极时生成的等离子体扩散速度最快,采用铅材质阴极时生成的等离子体的离子动能最大。     

Hyperbolic orbit and its variation of deep-space probe

While approaching the target body, the deep-space probe is orbiting hyperbolically before the maneuver. We discuss the variation of perturbed hyperbolic orbit using the method similar to that used in elliptic orbit. Ephemeris calculating and orbit control will benefit from the given analytical solution.     

HL-2A偏滤器运行模式的探针测量

在HL-2A装置的偏滤器位形运行模式下,用偏滤器靶板上的平面型嵌入式静电探针阵列测量了同一环截面的内外和上下四个中性化板上的电子温度、密度、悬浮电位分布。偏滤器运行模式下的边缘电子温度高于孔栏运行模式下的边缘的电子温度。比较了内外靶板之间的温度不对称性。给出了由18个米尔诺夫线圈信号重建获得的磁分界面,并用强磁场快速电离规测量了偏滤器室的中性气体压强变化。测量结果表明,在偏滤器运行模式下,主真空室中边缘粒子再循环降低,杂质通量水平下降。     

HL-2A 装置的边缘参数测量

HL-2A 装置中平面边缘的等离子体特性通过磁力传动的马赫/ 雷诺协强/ 朗缪尔10 探针组进行了研究。10 探针组安装在可径向向里和向外移动, 并可绕轴旋转360^o 的传动杆上, 用于测量主等离子体边缘的温度、密度、悬浮电位、空间电位、径向和极向电场、湍流的雷诺协强、径向和极向等离子体流速及其径向分布。HL- 2A 装置的实验结果表明, 边缘等离子体扰动诱发的雷诺协强产生了边缘极向流; 雷诺协强的径向梯度驱动带状流抑制了湍流输运。     

一个次氯酸根比色荧光探针及其逻辑行为（英文）

利用次氯酸根(ClO-)的氧化性质和Cu+与Cu2+不同的配位性质,一种高效的可用于探测ClO-的铜离子化合物CS1被合成出来。通过吸收和发射光谱系统地研究了CS1对ClO-的传感性能。结果表明,在Cu+存在条件下,CS1的光谱强烈受到OCl-影响:最大吸收峰从396 nm红移到545 nm(Δλ=149 nm);520nm处的荧光强度降低近25倍。以Cu+和ClO-为输入信号,以470 nm和396 nm吸收峰比值(A470/A396)为输出信号,构建了一个基于CS1的AND逻辑门,并且可以用乙二胺四乙酸二钠盐(EDTA)对其进行简单重置。     

Scanning probe microscopy studies of PbS surfaces oxidized in air and etched in aqueous acid solutions

Natural n-type PbS single crystals have been studied using AFM, STM and STS after long-term oxidation in air at ambient temperatures and extensive etching in aqueous acid solutions, in contrast to previous work devoted to initial corrosion of fresh surfaces. The exposure of PbS to atmosphere at high relative humidity for several days yields widespread loose oxidation products; the process is much slower at low humidity. Surface morphologies diverge after the treatment in 1 M perchloric and hydrochloric acid solutions at room temperature and become widely different at elevated temperatures, displaying commonly etch pits up to several micrometers in size and depth along with rather uniformly distributed 20-100 nm protrusions of PbS phase. The changes both in topography and semiconducting properties of PbS found by tunneling spectroscopy have been explained in terms of the non-uniform distribution of donor- and acceptor-type defects D⁺/D⁻ in the metal depleted surface layer, which are generated by chemical reactions and, in turn, determine the rates of the PbS corrosion. In particular, the D⁻ centers exhibit a self-catalyzing effect on the non-oxidative local dissolution of PbS in HCl media, resulting in the deep etch pits.     

Study of nitrogen ion implantation and diffusion phenomena on thin chromium layers followed by the atomic force microscopy and secondary ion mass spectroscopy techniques characterization

This research investigates the effect of ion implantation dosage level and further thermal treatment on the physical characteristics of chromium coatings on Si(1 1 1) substrates. Chromium films had been exposed to nitrogen ion fluencies of 1 × 10¹⁷, 3 × 10¹⁷, 6 × 10¹⁷ and 10 × 10¹⁷ N⁺ cm⁻² with a 15 keV energy level. Obtained samples had been heat treated at 450 °C at a pressure of 2 × 10⁻² Torr in an argon atmosphere for 30 h. Atomic force microscopy (AFM) images showed significant increase in surface roughness as a result of nitrogen ion fluence increase. Secondary ion mass spectroscopy (SIMS) studies revealed a clear increased accumulation of Cr₂N phase near the surface as a result of higher N⁺ fluence. XRD patterns showed preferred growth of [0 0 2] and [1 1 1] planes of Cr₂N phase as a result of higher ion implantation fluence. These results had been explained based on the nucleation-growth of Cr₂N phase and nitrogen atoms diffusion history during the thermal treatment process.     

用于飞秒时间分辨分子反应动力学研究的千赫兹离子/电子速度成像仪

A new velocity map imaging spectrometer is constructed for molecular reaction dynamics studies using time-resolved photoelectron/ion spectroscopy method.By combining a kHz pulsed valve and an ICCD camera,this velocity map imaging spectrometer can be run at a repetition rate of 1 kHz,totally compatible with the fs Ti:Sapphire laser system,facilitating time-resolved studies in gas phase which are usually time-consuming.Time-resolved velocity map imaging study of NH₃ photodissociation at 200 nm was performed and the time-resolved total kinetic energy release spectrum of H+NH₂ products provides rich information about the dissociation dynamics of NH₃.These results show that this new apparatus is a powerful tool for investigating the molecular reaction dynamics using time-resolved methods.     

A virtual optical probe based on evanescent wave interference

A virtual probe is a novel immaterial tip based on the near-field evanescent wave interference and small aperture diffraction, which can be used in near-field high-density optical data storage, nano-lithography, near-field optical imaging and spectral detection, near-field optical manipulation of nano-scale specimen, etc. In this paper, the formation mechanism of the virtual probe is analysed, the evanescent wave interference discussed theoretically, and the sidelobe suppression by small aperture is simulated by the three-dimensional finite-difference time-domain method. The simulation results of the optical distribution of the near-field virtual probe reveal that the transmission efficiency of the virtual probe is 10²－10⁴ times higher than that of the nano-aperture metal-coated fibre probe widely used in near-field optical systems. The full width at half maximum of the peak, in other words, the size of virtual probe, is constant whatever the distance in a certain range so that the critical nano-separation control in the near-field system can be relaxed. We give an example of the application of the virtual probe in ultrahigh-density optical data storage.