Low-energy ion-assisted control of interfacial structures in metallic multilayers

A molecular dynamics method has been used to simulate the argon ion-assisted deposition of Cu/Co/Cu multilayers and to explore ion beam assistance strategies that can be used during or after the growth of each layer to control interfacial structures. A low-argon ion energy of 5–10 eV was found to minimize a combination of interfacial roughness and interlayer mixing (alloying) during the ion-assisted deposition of multilayers. However, complete flattening with simultaneous ion assistance could not be achieved without some mixing between the layers when a constant ion energy approach was used. It was found that multilayers with lower interfacial roughness and intermixing could be grown either by modulating the ion energy during the growth of each metal layer or by utilizing ion assistance only after the completion of each layers deposition. In these latter approaches, relatively high-energy ions could be used since the interface is buried and less susceptible to intermixing. The interlayer mixing dependence upon the thickness of the over layer has been determined as a function of ion energy.     

Energy levels in doped SiGe quantum well studied by admittance spectroscopy

SiGe/Si quantum wells (QWs) with different Boron doping concentrations were grown by molecular beam epitaxy (MBE) on p-type Si(1 0 0) substrate. The activation energies of the heavily holes in ground states of QWs, which correspond to the energy differences between the heavy hole ground states and Si valence band, were measured by admittance spectroscopy. It is found that the activation energy in a heavily doped QW increases with doping concentration, which can be understood by the band alignment changes due to the doping in the QWs. Also, it is found that the activation energy in a QW with a doping concentration of 2 × 10²⁰ cm⁻³ becomes larger after annealing at a temperature of 685 °C, which is attributed to more Boron atoms activation in the QW by annealing.     

40,48Ca+90,96Zr融合反应的动力学模型研究

应用改进的量子分子动力学模型,在严格挑选初始核考虑弹靶结构效应的基础上,研究了近垒和垒上融合反应^40,48Ca+^90,96Zr. 研究表明: 4个反应的理论计算截面与实验值很好符合; 丰中子反应⁴⁰Ca+⁹⁶Zr的垒下融合截面比其他3个反应有明显增强的现象.为了理解丰中子反应⁴⁰Ca+⁹⁶Zr与⁴⁰Ca+⁹⁰Zr相比垒下融合截面增强,而Ca+⁹⁶Zr垒下融合截面没有明显增强的原因, 进一步分析了484个反应的融合位垒,中子转移与融合位垒的关系、中子转移与Q值的关系,结果表明: 正反应Q值会引起核子(特别是中子)转移的增强,从而导致动力学融合位垒的下降和垒下融合截面增强.     

Chen’ s theorem in arithmetical progressions

LetN be a sufficiently large even integer and

Ar—Kr溶液扩散系数的分子动力学模拟及其与温度的关系

用分子动力学模拟方法研究确定Ａｒ－Ｋｒ溶液的自扩散系数Ｄ１、Ｄ２和互扩散系数Ｄ１２以及它们随温度变化的规律。结果表明，分别用Ｇｒｅｅｎ－Ｋｕｂｏ法和Ｅｉｎｓｔｅｉｎ法得到的扩散系数在数值上一致；该溶液的３种扩散系数均满足Ｄ＝Ｄ０ｅ＾Ｅ／ＲＴ关系。     

SAPO-11分子筛的合成及其晶貌

以二异丙胺或二正丙胺为模板剂用水热合成法合成SAPO-11分子筛,发现pH值及模板剂的种类对所生成的SAPO-11晶体形貌有着明显的影响,通常观察到的球形晶貌实属长形柱体的聚集体。     

自旋交叉配合现象与分子电子器件

自旋交叉配合物在热、压力或光诱导自旋交叉现象的同时会伴随着其它一些协同效应，比如配合物颜色的改革、存在着大的热滞后效应等，这些协同效应是单个分子或分子集合体作为热开关、光开关和信息存储元件材料的基础。因此，自旋交叉配合物是开发新型的热开关、光开关和信息存储元件材料的理想分子体系。本文概述了自旋交叉现象的研究历史、现状和未来的发展趋势。讨论了影响配合物自旋交叉性质的各种内在的和外部的因素，总结了目前用于研究自旋交叉现象的各种现代测试技术。最后，展望了自旋交叉配合物在分子电子器件方面的应用前景。     

应用分子图形学、分子力学、量子化学及静电势研究农药分子结构与性能关系(X)──磺酰脲分子内旋转通道的分子力学研究

磺酞豚分子是一类极其重要的低毒超高效除草剂，有着十分重要的用途．研究分子的空间结构对于了解分子的构效关系十分重要．最近，我们测定的一系列分子的晶体结构［‘－’1表明，分子1、2、3晶体结构的空间群分别为PZ；儿、Pz、Pz，说明晶体中分别有对称元素（对称面或者对称中心），分子以对映体的形式存在于晶体中．由于磺酸豚分子本身不存在手性原子，由此推断磺酷服分子在晶体中存在的对映异构体是由内旋转阻碍产生的，因而应是构象异构体．本项研究工作的目的是应用分子力学方法，计算阻碍内旋转的能垒，从而找出分子内旋转时的最低…     

聚合物连续分级

本文较系统地介绍了聚合物连续分级的理论基础、实验室装置及其实际应用。     

拟除虫菊酯筛选及分子设计

综述了拟除虫菊酯的进展及新拟除虫菊酯的筛选和分子设计的方法等。参考文献５８篇。