AgNbO3/石墨烯复合材料的合成及其可见光催化甲基橙降解活性

采用固相法合成AgNbO₃/石墨烯复合纳米材料,利用透射电子显微镜(TEM)及紫外-可见漫反射光谱(UV-Vis)对样品的形貌及光学性质进行了表征。研究发现,AgNbO₃与石墨烯复合后,带隙能明显降低,吸收光波长范围增大。以甲基橙溶液的降解为光催化模型反应评价了AgNbO₃/石墨烯复合纳米材料的可见光催化性能。结果表明:与纯AgNbO₃相比,AgNbO₃/石墨烯复合纳米材料对甲基橙的可见光催化性能明显增强。实验条件下,经300 ℃煅烧的AgNbO₃/石墨烯(2:1)复合纳米材料表现出最优的催化性能,它对甲基橙的可见光催化脱色速率系数约为纯AgNbO₃的10倍。光催化降解机理研究表明,促使甲基橙降解脱色的主要活性物种为·O₂^- 和 h⁺。     

溶剂对石墨烯量子点荧光性质的影响

采用柠檬酸热解法制备了石墨烯量子点(GQDs),研究了非极性溶剂戊烷,极性溶剂乙醇、丙酮、乙二醇对GQDs荧光性质的影响。透射电子显微镜(TEM)和原子力显微镜(AFM)图像表明,制备的GQDs尺寸分布在2~12 nm(平均尺寸为4.9 nm),分散均匀,高度分布在0.5~2 nm。吸收光谱表明,GQDs具有明显的紫外吸收特性,吸收峰位于259 nm和274 nm。光致发光谱表明,GQDs的发光具有明显的溶剂依赖性。GQDs在极性溶剂乙醇、丙酮、乙二醇中,发光峰的位置依赖于激发波长,发射波长在可见光区。而在非极性溶剂戊烷中,GQDs表现出对激发波长不依赖的荧光性能,且发射波长在近紫外。     

Simple and flexible generation of vestigial side band modified duobinary return-to-zero signals at 10, 20 and 40 Gb/s

We propose and demonstrate a simple and flexible approach to generate vestigial side band modified duobinary return-to-zero (VSB MD-RZ) signals at 10-40 Gb/s, using a dual-drive Mach-Zehnder modulator and a detuned optical band-pass filter. The performance of the proposed VSB MD-RZ signal is investigated by comparing with double side band MD-RZ (DSB MD-RZ) and conventional VSB MD-RZ. Bit error ratio (BER) measurement at 10 Gb/s shows an error free operation for the generated signal. Good performance is further observed after 100 km of single-mode-fiber transmission at 40 Gb/s.     

High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate

In this paper,high temperature direct current(DC) performance of bilayer epitaxial graphene device on SiC substrate is studied in a temperature range from 25℃ to 200℃.At a gate voltage of-8 V(far from Dirac point),the drainsource current decreases obviously with increasing temperature,but it has little change at a gate bias of +8 V(near Dirac point).The competing interactions between scattering and thermal activation are responsible for the different reduction tendencies.Four different kinds of scatterings are taken into account to qualitatively analyze the carrier mobility under different temperatures.The devices exhibit almost unchanged DC performances after high temperature measurements at 200℃ for 5 hours in air ambience,demonstrating the high thermal stabilities of the bilayer epitaxial graphene devices.     

Enhanced Kerr nonlinearity in a quantized four-level graphene nanostructure

In this paper, a new model is proposed for manipulating the Kerr nonlinearity of right-hand circular probe light in a monolayer of graphene nanostructure. By using the density matrix equations and quantum optical approach, the third-order susceptibility of probe light is explored numerically. It is realized that the enhanced Kerr nonlinearity with zero linear absorption can be provided by selecting the appropriate quantities of controllable parameters, such as Rabi frequency and elliptical parameter of elliptical polarized coupling field. Our results may be useful applications in future all-optical system devices in nanostructures.     

Electronic transport of bilayer graphene with asymmetry line defects

In this paper,we study the quantum properties of a bilayer graphene with(asymmetry) line defects.The localized states are found around the line defects.Thus,the line defects on one certain layer of the bilayer graphene can lead to an electric transport channel.By adding a bias potential along the direction of the line defects,we calculate the electric conductivity of bilayer graphene with line defects using the Landauer-Biittiker theory,and show that the channel affects the electric conductivity remarkably by comparing the results with those in a perfect bilayer graphene.This one-dimensional line electric channel has the potential to be applied in nanotechnology engineering.     

氢掺杂单层石墨体系的晶格动力学研究

采用密度泛函理论研究了氢掺杂单层石墨（graphene）体系,并采用密度泛函微扰理论方法计算了体系局域振动模（LVMs）.结果显示,高频位置的LVMs数目与缺陷中氢原子数相等,而不同掺杂类型的LVMs频谱位置各不相同.研究结果及分析表明,LVMs测量是评估质子辐射下石墨样品的替位氢掺杂类型及其含量的有效方法,该方法可推广应用于研究其他掺杂体系. 关键词： 石墨 局域模式 晶格动力学     

Comparison of the formation epitaxial graphenes on Si- and process and properties of C-face 6H-SiC substrates

In this paper,the epitaxial graphene layers grown on Si-and C-face 6H-SiC substrates are investigated under a low pressure of 400 Pa at 1600 C.By using atomic force microscopy and Raman spectroscopy,we find that there are distinct differences in the formation and the properties between the epitaxial graphene layers grown on the Si-face and the C-face substrates,including the hydrogen etching process,the stacking type,and the number of layers.Hopefully,our results will be useful for improving the quality of the epitaxial graphene on SiC substrate.     

六方氮化硼薄膜对石墨烯-碳化硅结构近场热辐射的增强

六方氮化硼(hBN)具有跟石墨烯类似的层状结构和晶格参数,研究发现hBN薄膜具有良好的热传导、电绝缘、光学和力学等性能.本文从理论上研究了 hBN薄膜对石墨烯-碳化硅(G/S)结构的近场热辐射的影响.研究发现在红外频段,hBN薄膜在低频率区和高频率区会增强G/S结构的近场热辐射,经计算在G/S结构中加入厚度为10 nm...     

吸收波长和吸收效率可控的超材料吸收器

为了使超材料完美吸收器(metamaterial perfect absorber,MPA)能够同时实现吸收效率和吸收波长的控制,本文提出利用二氧化钒(VO2)和石墨烯作为MPA的材料,通过对MPA的结构设计,在红外波段实现了高吸收,吸收效率最高可达99％.研究发现通过改变VO2的温度和石墨烯的化学势,可同时实现MPA...