Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization

We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask.Transmission electron microscopy,scanning electron microscopy,and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth.The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer,resulting in the window region shrinking from a rectangle to a "black hole".Furthermore,strong yellow luminescence(YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence,suggesting that C-involved defects are responsible for the YL.     

气源MBE外延自组装GeSi量子点光致荧光研究

利用气源分子束外延设备（MBE）制作了GeSi自组装量子点样品。利用原子力显微镜（AFM）和光致荧光（PL）光谱研究了量子点的形貌和光学性质。气源MBE在较低温度下生长的量子点材料具有较高的量子点覆盖度。200K以下载流子以局域激子形式束缚在量子点中,激子束缚能约为17meV。升温至200K,载流子的输运过程发生变化。对量子点PL积分强度与温度关系曲线进行拟合得到量子点中空穴跃迁至浸润层的热激活能为129meV。     

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

Radiophotolumenescence of Irradiated Polymethylmethacrylate Doped with Some Charge Transfer Complexes

Radiophotolumenescence (RPL) of irradiated and non irradiated thin films of polymethylmethacrylate (PMMA) doped with anthracene (Anth) as a donor, and tetracyanoquinodimethane (TCNQ) as an acceptor, has been investigated. The RPL – glow spectrum was recorded to study the characterizing emission bands from the point of view of glow peak position and intensity and hence the prospective relative sensitivities. RFL – signal fading after one month storage in dark at room temperature post gamma irradiation was also studied. PMMA doped with 6:4 donor to acceptor ratio has been proved to be the most sensitive one with less fading regarding gamma detection. On the other hand 2 Anth: 8 TCNQ was found to be the proper dopant concentration ratio for thermal neutron detection.     

Separation of Carrier Free Manganese-54 and Iron-59 Using Reversed Phase Partition Chromatography

Carrier free radioactive ⁵⁴Mn and ⁵⁹Fe enjoy favoured position in industrial, agricultural and medical applications [1]. The main methods used for their isolation from suitable irradiated targets are mainly based on solvent extraction [2] or ion exchange [3].     

Self-interstitial solute interaction in aluminium base alloys: Problems of data interpretation

The interpretation of electrical resistivity measurement results of Al base alloys is critically discussed. Correct numerical data evaluation with respect to the atomistic properties r_c/r_p, r_t and Pf^t/Pf is yet impossible for Al and its alloys because of the overlapping of Ic and Id recovery for those electron irradiations for which damage rate measurements exist and because of the unexplained scatter of initial damage rate data.     

TEM investigation of the formation mechanism of deformation twins in Fe–Mn–Si–Al TWIP steels

The microstructure of a Fe–Mn–Si–Al twinning-induced plasticity (TWIP) steel exhibiting remarkable work hardening rate under uniaxial tensile deformation was investigated using transmission electron microscopy to uncover the mechanism(s) controlling the nucleation and growth of the mechanically induced twins. The results show that the stair-rod cross-slip deviation mechanism is necessary for the formation of the twins, while large extrinsic stacking faults homogenously distributed within the grains could act as preferential sources for the activation of the deviation process. The influence of such features on the thickness and strength of the twins and the resulting mechanical behaviour is discussed and compared to similar works recently performed on Fe–Mn–C TWIP steels.     

GaN FP-HEMTs中击穿电压与电流崩塌的关系

研究了钝化在抑制电流崩塌的同时，会引起HEMT器件击穿电压的下降.而采用场板结构的AlGaN/GaN场板HEMT器件(FP-HEMT)的击穿电压从46V提高到了148V，表明了场板对提高击穿电压有显著作用(3倍以上).接着，比较了FP-HEMT器件与常规HEMT器件，钝化后HEMT器件在应力前后的电流崩塌程度，得出了采用场板结构比之钝化对器件抑制电流崩塌有更明显作用的结论.从理论上和实验上都表明，采用场板结构能够很好解决提高击穿电压与抑制电流崩塌之间的矛盾. 关键词： GaN 场板 击穿电压 电流崩塌     

成分和厚度的依赖

通过调整Mn的成分，系统地研究了Ni81Fe19/Ni100-xMnx双层膜的磁学性质，特别是交换偏置场(Hex)的变化.当Ni100-xMnx中Mn的原子百分比在534%到600%之间时，对于150nm的Ni81Fe19，得到了最大的交换偏置场175kA/m，同时由于Mn对Ni81Fe19层的扩散所造成的磁矩的降低小于20%；高角x射线衍射证明Ni100-xMnx的晶格常数随着Mn成分的改变而变化，Mn含量越多，其晶格常数越大；制备态Ni100-xMnx膜晶格常数与θ相NiMn膜晶格常数的接近程度与NiMn膜θ相形成的容易程度相对应.也研究了交换偏置场随着Ni１００-xMnx厚度的变化，第一次得到了当Ni100-xMnx中Mn的原子百分比为706%时，Ni81Fe19(150nm)/Ni100-xMnx(90nm)双层膜在经过240℃，5h退火后，可以有80kA/m的交换偏置场，此时铁磁层磁矩的大小几乎不变. 关键词： Ni81Fe19/Ni100-xMnx 交换偏置场     

Mn12-Ac磁性分子团簇单晶的热重-差热分析与结构转变

通过热重-差热分析(TG-DTA)，考察了Mn12-Ac磁性分子晶体从室温到270℃的热失重过程.结合x射线粉末衍射分析，认为在第一个失重阶段，即25—110℃，Mn12-Ac失去了处于团簇分子间隙的结晶乙酸和结晶水，同时失去了团簇分子中与4个Mn3+配位的4个H2O，Mn12-Ac单晶结构被破坏，但是团簇分子的基本结构依然存在；在第二个失重阶段，即180—230℃，Mn12-Ac转变为γ-Mn2O3，其中混有少量Mn3O4. 关键词： Mn12 分子团簇 热重-差热分析 x射线衍射