Ion implantation of sulphur into GaAs,GaP and ge monocrystals

The possibility of using ion implantation to form high concentration junctions in semiconductors has been explored for the specific case of sulphur in GaAs, GaP and Ge. The effects of ion dose, ion energy, crystal orientation and target temperature have been investigated by means of radiotracers and sectioning techniques.

It is shown that high concentration junctions can be formed using an incident ion having high electronic stopping cross-section and implanted along the <110< channeling directions of the crystals. A large increase in junction concentration may be obtained when the GaAs and GaP crystals are maintained at 150 °C during the implantation process, but this is not the case with Ge. Rutherford back-scattering of 1 MeV He⁺ ions has been used to measure the ion-bombardment induced damage in the crystals and to show how this damage can be annealed by heating the crystal during the implantation. The annealing, at temperatures up to 150 °C, is most effective in GaAs and least effective in Ge.     

A matter of scale: from far‐field microscopy to near‐field nanoscopy

Vibrational spectroscopy is a powerful analytical tool which provides chemical information about a sample without a priori knowledge. By combining vibrational spectroscopy with different microscopic techniques, scientists can visualize and characterize the chemical composition of a sample on length scales which cover many orders of magnitude; from far‐field radiation used in microwave astronomy and Fourier transform infrared microscopy, to near‐field scattering used in tip‐enhanced Raman spectroscopy and scanning near‐field optical or infrared microscopy. Here, various modern chemical mapping techniques are reviewed and their advantages and disadvantages are discussed. Also, a basic theoretical background is provided for each technique along with several illustrative examples.     

Etching of silicon nanowires on Ag(1 1 0) by atomic hydrogen

Scanning Tunnelling Microscopy, High Resolution Electron Energy Loss Spectroscopy and High Resolution X-Ray Photoelectron Spectroscopy have been used to study the adsorption of atomic hydrogen onto Si nanowires grown on Ag(1 1 0). We demonstrate that the hydrogen strongly interacts with the Si nanowires modifying their structural and electronic properties. Hydrogen atoms etch the Si nanowires and eventually lead to their complete removal from the Ag(1 1 0) surface.     

Discrete diffraction for analytical approach to tightly focused electric fields with radial polarization

Radially polarized laser beams in high-resolution microscopy provide an effective means to reduce the focus size below the diffraction limit. Unfortunately, their theoretical manipulation is usually limited to numerical methods. Here, we demonstrate an approach that leads to analytical expressions for the focused electric fields. The approach is based on the discretization of the continuous character of diffraction taking place at the microscope focus. Comparisons with fully numerical calculation are discussed. It results that the new approach accurately reflects the distribution of light within the focal volume with relative deviations that are between 10⁻⁴ and 10⁻¹³.     

界面折射率不一致对显微成像穿透深度的限制

在运用共焦显微术及低相干显微成像术等进行光学断层成像时,要将光束聚焦到样品内部以便实现光学断层成像,然而由于生物组织等的折射率与盖玻璃以及浸液不同,因而会引入很大的球差,从而使入射电磁波发生畸变.分析了由于多层折射率不一致而引入的球差的大小,并运用所得的公式计算了折射率不一致对光在样品中穿透深度及焦面附近光场分布的影响.     

一种基于室温工作的量子点光电探测器的微光读出和应用研究

针对量子点光电探测器线列进行微光检测研究,量子点探测器采用AlAs/GaAs/AlAs双势垒结构,GaAs宽阱中分别有一个InAs量子点(QDs)和In_0.15Ga_0.85As量子阱(QW),建立一个简单的器件模型进行分析。常温下,在632.8 nm He-Ne激光照射下,当光功率为 0.01 pW时,器件偏压-0.5 V,积分时间80.2 μs,电压响应率达到7.0×1011 V·W-1,具有非常高的灵敏度,这种光电探测器在300 K温度下可以探测光功率小于10-14 W极弱光。以这种量子点光电探测器为核心研制的高灵敏度光谱仪和分子超光谱系统结合对生物组织样本进行检测,研制了一种图谱相互验证,互为校正的生物组织光谱测量系统。     

提高原子力显微镜（AFM）成像质量的方法

针对原子力显微镜AFM不要求样品具有导电性的优点,分析了影响原子力显微镜AFM扫描图像质量的原因及提高AFM成像质量的方法。     

Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride

Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and optical reflection. Strong influence of the graded-gap surface layer grown on top of the film on the behaviour of implantation-induced defects under arsenic activation annealing was revealed and interpreted.     

频谱编码深度成像实验研究

频谱编码显微镜是用衍射光栅和光谱分析装置来获得显微图像.样品上不同的位置被不同的波长照明,通过对反射光光谱进行解码来得到空间信息.搭建了一个基于超连续光源和自制光谱仪的频谱编码显微成像系统,其横向分辨率为1.72±0.13μm(编码线方向)和1.26±0.08μm(垂直于编码线方向),测得不同横向位置处的轴向分辨率有差异.对离体猪肝组织不同部位进行了成像(可见血管、肝窦内皮细胞和肝细胞);对鸡心组织以10μm深度间隔进行成像,测得不同深度处结构信息不一样.结果表明,采用该频谱编码成像的方法能够进行高分辨的深度成像.     

Design of a superconducting volume coil for magnetic resonance microscopy of the mouse brain

We present the design process of a superconducting volume coil for magnetic resonance microscopy of the mouse brain at 9.4T. The yttrium barium copper oxide coil has been designed through an iterative process of three-dimensional finite-element simulations and validation against room temperature copper coils. Compared to previous designs, the Helmholtz pair provides substantially higher B(1) homogeneity over an extended volume of interest sufficiently large to image biologically relevant specimens. A custom-built cryogenic cooling system maintains the superconducting probe at 60+/-0.1K. Specimen loading and probe retuning can be carried out interactively with the coil at operating temperature, enabling much higher through-put. The operation of the probe is a routine, consistent procedure. Signal-to-noise ratio in a mouse brain increased by a factor ranging from 1.1 to 2.9 as compared to a room-temperature solenoid coil optimized for mouse brain microscopy. We demonstrate images encoded at 10x10x20mum for an entire mouse brain specimen with signal-to-noise ratio of 18 and a total acquisition time of 16.5h, revealing neuroanatomy unseen at lower resolution. Phantom measurements show an effective spatial resolution better than 20mum.