用半导体环形激光器产生混沌信号

提出了一种由一个分布式反馈激光器为主激光器和一个半导体环形激光器为从激光器组成的主从式激光混沌系统方案,主激光器产生的光单向注入到从激光器中,通过调整注入系数、主从激光器的失谐频率和从激光器的偏置电流,使从激光器工作在混沌状态,输出混沌信号。从基于光注入条件下的环形激光器的速率方程组入手,数值模拟了主从激光器的失谐频率、注入系数和从激光器的偏置电流3个工作参量对从激光器输出动态的影响。研究表明:外光注入条件下,半导体环形激光器可以产生混沌信号。通过分析得出:当失谐频率为3.9 GHz、注入系数为0.07、偏置电流为81 mA时,环形激光器可以产生功率谱平坦、带宽较宽的高质量混沌信号。     

有源光纤环等效时间脉冲复制研究

对利用半导体光放大器有源光纤环为光等效时间采样提供低失真脉冲序列的方法进行了研究。分析了提高复制精度的辅助直流光非线性增益抑制方法,并给出基于递推方式,可进一步提高采样精度的后处理算法。通过实验验证了辅助直流光注入对复制器非线性增益的抑制作用;以及在不充分辅助直流光注入条件下,利用后处理算法抑制非线性误差的效果。结果显示利用半导体光放大器有源光纤环结合后处理算法可以有效地为光等效时间采样提供特性一致、误差可处理的时序脉冲序列。     

基于单片机和半导体制冷片的热敏电阻实验

介绍了半导体制冷片的基本结构,基于单片机和半导体制冷片设计了热敏电阻温度特性研究实验,设计完成了温度特性研究系统的硬件电路和软件构造,探讨了单片机和半导体制冷片在物理实验中的应用.此实验平台具有很好的扩张性,可用于设计组成各种温度控制类的实验内容.所完成的温度特性研究实验系统具有集成度高、体积小、使用方便等特点.     

Optoelectronic properties of Cu1−xPtxFeO2 (0 ≤ x ≤ 0.05) delafossite for p-type transparent conducting oxide

The samples of Cu_1−xPt_xFeO₂ (0 ≤ x ≤ 0.05) delafossite have been synthesized by solid-state reaction method to investigate their optical and electrical properties. The properties of electrical resistivity and Seebeck coefficient were measured in the high temperature ranging from 300 to 960 K, and the Hall effect and the optical properties were measured at room temperature. The obtained results of Seebeck showed the samples are p-type conductor. The optical properties at room temperature exhibited the samples are transparent visible light material with optical direct gap 3.45 eV. The low electrical resistivity, hole mobility and carrier density at room temperature displayed value ranging from 0.29 to 0.08 Ω cm, 1.8 to 8.6 cm²/V s and 1.56 × 10¹⁸ to 4.04 × 10¹⁹ cm⁻³, respectively. The temperature range for transparent visible light is below 820 K because the direct energy gap contains value above 3.1 eV. Consequently, the Cu_1−xPt_xFeO₂ delafossite enhance performance for materials of p-type transparent conducting oxide (TCO) with low electrical resistivity.     

Quantum-dot Semiconductor Optical Amplifiers in State Space Model

A state space model(SSM) is derived for quantum-dot semiconductor optical amplifiers(QD-SOAs).Rate equations of QD-SOA are formulated in the form of state update equations,where average occupation probabilities along QD-SOA cavity are considered as state variables of the system.Simulations show that SSM calculates QD-SOA's static and dynamic characteristics with high accuracy.     

Pressure-induced phase transition in silicon nitride material

The equilibrium crystal structures,lattice parameters,elastic constants,and elastic moduli of the polymorphs α-,β-,and γ-Si3N4,have been calculated by first-principles method.β-Si3N4 is ductile in nature and has an ionic bonding.γSi3N4 is found to be a brittle material and has covalent chemical bonds,especially at high pressures.The phase boundary of the β→γ transition is obtained and a positive slope is found.This indicates that at higher temperatures it requires higher pressures to synthesize γ-Si3N4.On the other hand,the α→γ phase boundary can be described as P = 14.37198+ 3.27 × 10?3T-7.83911 × 10?7T2-3.13552 × 10?10T3.The phase transition from α-to γ-Si3N4 occurs at 16.1 GPa and 1700 K.Then,the dependencies of bulk modulus,heat capacity,and thermal expansion on the pressure P are obtained in the ranges of 0 GPa-30 GPa and 0 K-2000 K.Significant features in these properties are observed at high temperatures.It turns out that the thermal expansion of γ-Si3N4 is larger than that of α-Si3N4 over wide pressure and temperature ranges.The evolutions of the heat capacity with temperature for the Si3N4 polymorphs are close to each other,which are important for possible applications of Si3N4.     

Photonic multi-shape UWB pulse generation using a semiconductor optical amplifier-based nonlinear optical loop mirror

We propose and demonstrate a scheme to implement photonic multi-shape ultra-wideband(UWB) signal generation using a semiconductor optical amplifier(SOA) based nonlinear optical loop mirror(NOLM).By employing the cross phase modulation(XPM) effect,cross gain modulation(XGM),or both,multi-shape UWB waveforms are generated including monocycle,doublet,triplet,and quadruplet pulses.Both the shapes and polarities of the generated pulses are flexible to adjust,which may be very useful in UWB pulse shape modulation and pulse polarity modulation.     

铋系半导体光催化剂的光催化性能调控

铋系光催化剂具有良好的光催化性能,由于其Bi6s和O2p的轨道杂化,提高了价带的位置,从而减小了禁带宽度,使得铋系光催化剂在可见光范围内具有明显的吸收,已成为近年来光催化领域研究的热点。铋系光催化剂在可见光区的光催化活性虽然比传统的TiO₂有明显的提高,但其量子效率不高,光生电子-空穴容易结合,对可见光的吸收有限等问题,使其离实际应用仍存在较大的距离。因此,必须采取合适的措施来提高铋系催化剂的光生载流子速率,抑制光生电子-空穴复合,增强对可见光的吸收。本文主要综述了近年来在铋系半导体光催化剂光催化性能调控方面的最新研究进展,重点就铋系半导体光催化剂的形貌控制、特殊晶面暴露、贵金属沉积、离子掺杂、非金属掺杂、半导体复合等方面进行分析和总结,并对铋系半导体光催化剂的发展方向进行展望。     

铋基半导体光催化材料的研究进展

光催化技术可以光解水制氢和降解有机和部分无机污染物等,在环境和能源领域受到越来越广泛的重视,而光催化材料则是该技术的关键.在目前已研发的各种光催化材料中,铋基半导体光催化材料具有可见光响应且有良好的光催化活性.本文综述了国内外对铋基光催化材料及其应用研究新进展,并展望了铋基半导体光催化材料的发展前景.     

ZnS(111)表面掺杂Mn的电子结构和磁性的第一性原理研究

应用基于密度泛函理论的第一性原理,研究Mn原子掺杂在ZnS(111)表面的电子结构和磁性.对于单原子的掺杂组态,替位表面第一层的Zn原子时体系形成能最低,说明该层是最稳定的掺杂位置.体系总磁矩取决于Mn原子的局域环境.而对于双掺杂组态,当Mn与Mn之间呈短程铁磁耦合作用时体系最稳定.这可由Mn原子和近邻S原子的p-d杂化作用解释.此时,体系的居里温度估算值为469 K,明显高于室温,具有理论指导意义.Mn原子和受主半导体之间的相互作用是自旋极化产生的主要原因.计算结果表明,该掺杂材料可以很好的用来制作稀磁半导体,具有良好的应用前景.