Constrained large-eddy simulation of supersonic turbulent boundary layer over a compression ramp

A supersonic turbulent boundary layer over a compression ramp is numerically investigated using the constrained large-eddy simulation (CLES) method. The compression corner is characterised by a deflection angle of 24°. The free-stream Mach number is Ma_∞ = 2.9, and the Reynolds number based on the momentum thickness of inlet boundary layer is Re_θ = 2300. The mean and statistical quantities, such as mean velocity, wall pressure and Reynolds stresses, are thoroughly analysed and compared with those from traditional large-eddy simulation (LES), experimental measurement and direct numerical simulation (DNS). It turns out that CLES can predict the friction coefficient, wall-pressure distribution, size of separation bubble, Reynolds stresses, etc. more accurately than traditional LES, and the results are in reasonable agreement with the experimental and/or DNS data. Also discussed are the effects of specific parameterisations of the Reynolds constraint and interfacial positions separating the constrained and unconstrained regions on the performance of the CLES method.     

Reversal current observed in micro-and submicro-channel flow under non-continuous DC electric field

In practical applications of biochips and bio-sensors, electrokinetic mechanisms are commonly employed to manipulate and analyze the characteristics of single bio-molecules. To accurately and flexibly control the movement of single molecule within micro-/submicro-fluidic channels, the characteristics of current signals at the initial stage of the flow are systematically studied based on a three-electrode system. The current response of micro-/submicro-fluidic channels filled with different electrolyte solutions in non-continuous external electric field are investigated. It is found, there always exists a current reversal phenomenon, which is an inherent property of the current signals in micro/submicro-fluidics Each solution has an individual critical voltage under which the steady current value is equal to zero The interaction between the steady current and external applied voltage follows an exponential function. All these results can be attributed to the overpotentials of the electric double layer on the electrodes. These results are helpful for the design and fabrication of functional micro/nano-scale fluidic sensors and biochips.     

Thermal stability and data retention of resistive random access memory with HfO_x/ZnO double layers

As an industry accepted storage scheme, hafnium oxide(HfO_x) based resistive random access memory(RRAM)should further improve its thermal stability and data retention for practical applications. We therefore fabricated RRAMs with HfO_x/ZnO double-layer as the storage medium to study their thermal stability as well as data retention. The HfO_x/ZnO double-layer is capable of reversible bipolar switching under ultralow switching current( 3 μA) with a Schottky emission dominant conduction for the high resistance state and a Poole–Frenkel emission governed conduction for the low resistance state. Compared with a drastically increased switching current at 120℃ for the single HfO_x layer RRAM, the HfO_x/ZnO double-layer exhibits excellent thermal stability and maintains neglectful fluctuations in switching current at high temperatures(up to 180℃), which might be attributed to the increased Schottky barrier height to suppress current at high temperatures. Additionally, the HfO_x/ZnO double-layer exhibits 10-year data retention @85℃ that is helpful for the practical applications in RRAMs.     

Inverted organic solar cells with solvothermal synthesized vanadium-doped TiO_2 thin films as efficient electron transport layer

We investigated the effects of using different thicknesses of pure and vanadium-doped thin films of TiO_2 as the electron transport layer in the inverted configuration of organic photovoltaic cells based on poly(3-hexylthiophene) P3HT:[6-6] phenyl-(6) butyric acid methyl ester(PCBM). 1% vanadium-doped TiO_2nanoparticles were synthesized via the solvothermal method. Crystalline structure, morphology, and optical properties of pure and vanadium-doped TiO_2 thin films were studied by different techniques such as x-ray diffraction, scanning electron microscopy, transmittance electron microscopy, and UV–visible transmission spectrum. The doctor blade method which is compatible with roll-2-roll printing was used for deposition of pure and vanadium-doped TiO_2 thin films with thicknesses of 30 nm and 60 nm. The final results revealed that the best thickness of TiO_2 thin films for our fabricated cells was 30 nm. The cell with vanadium-doped TiO_2 thin film showed slightly higher power conversion efficiency and great J_(sc) of 10.7 mA/cm~2 compared with its pure counterpart. In the cells using 60 nm pure and vanadium-doped TiO_2 layers, the cell using the doped layer showed much higher efficiency. It is remarkable that the external quantum efficiency of vanadium-doped TiO_2 thin film was better in all wavelengths.     

激光与近相对论临界密度薄层相互作用产生大电量高能电子束

研究了激光与近相对论临界密度等离子体薄层相互作用时所产生的高能电子束的主要特征,包括平均有效温度以及截止能量等.实验结果表明,电子束的电量超过nC量级,平均有效温度可达8 MeV以上.PIC数值模拟证明,近相对论临界密度等离子体内,相对论自透明效应和激光钻孔效应共同形成一条磁化等离子体通道,电子与激光将在角向磁场的协助下发生Betatron共振.激光可将电子直接加速到很高能量,因此电子束平均有效温度("斜坡温度")远远超过Wilks定标率预计的平均温度.该研究为产生高亮度X射线源提供了一种新的可能途径.     

基于三角波瓣混合器的超声速流场精细结构和掺混特性

在超声速吸气式混合层风洞中,采用基于纳米粒子的平面激光散射(NPLS)技术对平板混合层和三角波瓣混合器诱导的混合层流场精细结构进行了对比实验研究.上下两层来流的实测马赫数分别为1.98和2.84,对流马赫数为0.2.NPLS图像清晰地展示了Kelvin-Helmholtz涡、流向涡、波系结构以及大尺度涡结构的配对合并过程.通过对比分析时间相关的NPLS流场图像,发现了大尺度拟序结构随时间发展演化的非定常特性.基于流动显示结果,采用分形维数和间歇因子指标对流场结构和混合特性进行了定量分析.实验研究表明,三角波瓣混合器诱导的流向涡结构显著提高了上下两层来流的掺混效率,其流动远场的分形维数突破了平板混合层中完全湍流区的分形维数值,达到了1.88,流场结构表现出明显的破碎性,有利于流动在标量层面的扩散和掺混.流动间歇性分析表明,流向涡与展向涡的相互剪切作用主导着混合层的掺混特性,同时由于流向涡的卷吸作用,三角波瓣混合器诱导的混合层混合区域更大,更多的流质被卷入混合区完成混合.     

Se掺杂对单层MoS2电子能带结构和光吸收性质的影响

基于密度泛函理论的第一性原理方法,计算了Se掺杂单层MoS₂能带结构和光吸特性,并分析了对其光解水性质的影响。结果表明：本征单层MoS₂为直接带隙结构,禁带宽度为1.740 eV,导带底电位在H⁺/H₂还原势之上0.430 eV,价带顶电位在O₂/H₂O的氧化势之下0.080 eV,具有可见光催化分解水的能力,但氧化和还原能力不均衡,导致单层MoS₂作为光催化剂分解水的效率不高。通过Se掺杂计算发现,单层MoS₂的禁带宽度变为1.727 eV,相应的光吸收谱变化幅度几乎不变,且体系的形成能较低,表明其热力学稳定性良好。然而,导带底电位调整到H⁺/H₂还原势之上0.253 eV,价带顶电位处于O₂/H₂O的氧化势之下0.244 eV,平衡了氧化与还原能力,单层MoS₂可见光催化分解水的效率得到提高。     

二维层状分子筛前驱体的合成、改性及催化应用

二维层状分子筛前驱体具有三维分子筛的层结构单元,具备母体分子筛的特性,其开放二维片层骨架结构给合成新分子筛以及基于其改性得到新衍生结构分子筛提供新机遇,是近年来分子筛研究领域一个新热点。大量二维片层前驱体可直接合成或通过三维分子筛后处理获得,基于二维片层前驱体人们发展了溶胀、剥层、柱撑、原子扩孔、层重组等层操纵的策略,通过这些策略一些常规方法难以合成或不符合理论规则的分子筛被合成出来,这极大地丰富了二维层状分子筛前驱体的研究领域,扩展了其应用范围。本文概述了二维层状分子筛前驱体的结构特点,系统总结了近年来二维层状分子筛前驱体的合成方法,在此基础上着重阐述了其改性获得新结构分子筛的新策略,并介绍了在多相催化反应中的应用。     

SILAR法制备TiO2/CdS/Co-Pi水氧化光阳极及其性能

采用连续离子层吸附法（SILAR）沉积CdS制备type-Ⅱ异质结TiO₂/CdS光阳极,用光电化学沉积法在TiO₂/CdS表面沉积催化剂（Co-Pi）得到TiO₂/CdS/Co-Pi水氧化光阳极。通过X射线衍射（XRD）仪、扫描电子显微镜（SEM）、X射线光电子能谱（XPS）仪等对样品结构及组成进行分析,证明CdS与Co-Pi已成功负载在TiO₂表面。用已制备的光阳极在中性溶液中模拟水氧化测试,在较低外偏压（0 V（vs Ag/AgCl））和无电子牺牲剂的情况下,即使在可见光照射下,依然得到较高的初始光电流和稳定光电流,分别为1.3和0.5 mA·cm^-2,表明制备的光阳极可以在可见光照下有效地驱动水氧化反应。光电化学池的工作原理为,CdS吸收光子产生光生电子-空穴,TiO₂和Co-Pi分别传输电子和空穴,空穴进行水氧化,电子转移到阴极完成质子还原。