北京自由电子激光最近进展──实现饱和振荡

北京自由电子激光(BFEL)装置于1993年底在10.68μm处实现了饱和振荡.输出激光能量为3mJ,饱和平顶宽度2μs.对应饱和振荡平均功率为210kW(宏脉冲),峰值功率约为20MW,比自发辐射高8个量级,单程小讯号净增益为24%,转换效率为0.45%,与理论预期结果相符.光束质量接近衍射极限.目前装置可工作于9-11μm.     

基于B3PyMPM∶Cs高效叠层OLED器件的制备

以B 3 PyMPM∶Cs/Al/HAT-CN作为电荷生成单元制备高效叠层绿色磷光有机电致发光器件,叠层器件的最大电流效率和最大流明效率分别为172.2 cd/A和111.0 lm/W,在5 mA/cm^2电流密度下,叠层器件的电压和亮度分别为传统器件的2.04倍和2.84倍.为了探究叠层器件性能优于传统器件的原因,研究了电荷生成单元内的电荷产生和注入过程,以及薄层铝对电子注入特性和电荷生成单元稳定性的影响.实验结果表明,电荷能够有效地在电荷生成单元内产生并顺利注入电子传输层中,B3PyMPM∶Cs和HAT-CN间Al薄层的插入能够进一步提高电子注入效率及器件结构的稳定性.     

高压下发射药燃气的状态方程

 本文从分子运动论出发，考虑到高密度下分子碰撞及高温下分子间作用的特点，提出了简化的三分子碰撞模型，并引进屏蔽效应，给出了描述高压下火药燃气实际状态行为的多项式型状态方程式。在800 MPa的压力范围以内，本文对不同组分的发射药进行了计算，其计算压力与实验有较好的一致性。比目前美国三军所用程序BLAKE编码的计算结果有所改进。     

质子注入能量对垂直腔面发射激光器的阈值和功率的影响

文章研究了如何兼顾质子注入型垂直腔面发射激光器的功率和阈值性能.从模拟和实验两方面分析了质子注入能量与器件功率和阈值特性的关系.发现注入能量过高时,损伤有源区,降低了功率性能.而能量过低则会减弱对注入电流的限制,增加阈值.计算和实验结果表明,对于文中的器件结构,315 keV的注入能量是合适的.在10μm的注入孔径下获得器件的阈值为4.3 mA,功率为1.7 mW.     

NEPCⅡ新电子枪热结构分析与测试

北京正负电子对撞机重大改造工程(BEPCⅡ)要求其直线注入器提供更高的能量和流强, 为此必须设计大电流和小发射度的新电子枪, 以提高正电子的产额. 利用ANSYS对BEPCⅡ新电子枪的温度场分布及结构的热变形进行了模拟分析. 对于电子枪复杂的内部结构形态以及能量转换方式, 分析了传导传热方式对温度场的影响. 在此基础上进行了温度场与结构变形的耦合分析, 利用EGUN对电子枪形变前后束流光学特性进行模拟分析, 并对模拟结果与试验 测试结果进行了分析比较.     

Skin Thickness and β-Crystals Development in Injection-Molded iPP Along the Flow Direction

In this study, iPP was injection molded at 180°C, 200°C, and 220°C. According to polarization optical microscopy (POM) results, for a given part, the skin thickness steadily decreases along the flow direction. However, at the same distance from the gate, the skin thickness of the parts molded at lower melt temperature is larger than that molded at higher melt temperature. It is found that flow time (here, the time taken for melt to pass the specific position along the flow direction) and melt temperature are two significant factors leading to this phenomenon, while the gate size is another one.

The DSC and WAXD results show that the relative fraction of β-form crystals, for a specific part, decreases along the flow direction, which is mainly determined by flow time. However, for the parts molded at different molding temperatures, the fraction of the β-form crystals is mainly determined by the molding temperature, though this influence is very complex.     

Epitaxial LSMO films grown on MgO single crystalline substrates

The manganite La_0.67Sr_0.33MnO₃ (LSMO) layers are deposited on single crystal MgO(0 0 1) substrates using a magnetron dc sputtering. The crystalline perfection of the layers, both the as-prepared and the annealed, are characterized by X-ray diffraction technique, rocking curve measurements, Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy (TEM). TEM analyses give evidence of the epitaxial growth of the annealed LSMO with a nanocrystalline surface layer. The temperature dependence of resistance in the 77-340 K range is measured by a standard four-probe technique. While the as-prepared film does not show any transition from paramagnetic to ferromagnetic state, the film annealed in oxygen shows steep R(T) dependence with a peak at 330 K and maximal slope (dR/dT) at 290 K where the maximal sensitivity is 3% K⁻¹.     

Measurement of small-signal and large-signal responses of packaged laser modules at high temperature

In this paper, the pulsed injection method is extended to measure the chip temperature of various packaged laser modules, such as the DFB laser modules, the FP laser modules, and the EML laser modules. An optimal injection condition is obtained by investigating the dependence of the lasing wavelength on the width and period of the injection pulse in a relatively wide temperature range. The small-signal frequency responses and large-signal performances of packaged laser modules at different chip temperature are measured. The adiabatic small-signal modulation characteristics of packaged LD are first extracted. In the large-signal measurement, the effects of chip temperature, bias current and driving signal on the performances of the laser modules are discussed. It has been found that the large-signal performances of the EML modules depend on the different red-shift speeds of the DFB and EAM sections as chip temperature varying, and the optimal characteristics may be achieved at higher temperature.     

A bidirectional hybrid DWDM-PON employing optical injection locking technique and data comparators

A bidirectional hybrid dense-wavelength-division-multiplexing (DWDM)-passive optical network (PON) employing optical injection locking technique on vertical-cavity surface-emitting lasers (VCSELs) and data comparator, as well as optical injection locking technique on distributed feedback laser diodes (DFB LDs) and amplitude/phase compensator is proposed and demonstrated. Improved performances of bit error rate (BER) and carrier-to-noise ratio/composite second order/composite triple beat (CNR/CSO/CTB) were observed in our proposed bidirectional hybrid DWDM-PON. Bidirectional transmission in bidirectional hybrid DWDM-PON architecture is a very attractive option, the capacity of the optical network can be expanded relatively easily by bidirectional transmission technology.