反射式流通池顺序注射光度检测系统的研制

提出一种反射式流通池用于过程分析光度检测系统 ,可以明显地抑制折光指数效应产生的干扰。以发光二极管为光源 ,采用多股光纤分别与流通池 ,光源 ,检测器耦合 ,实现对透射后反射回的光谱检测。以Cl- Hg(SCN) 2 Fe(Ⅲ )反应显色体系为模型对系统的实验参数进行了优化。讨论了试剂注入量、进样量、载流流速、试剂注入次序等参数对检测结果的影响。方法的线性范围为 0～ 10 0mg·L-1(相关系数r =0 998) ;分析精度 (RSD ,n =11)为 1 5 % ;检出限为 1 2mg·L-1;分析速度为 30个样·h-1;对自来水和海水的回收率分别为 95 %和 10 4 %。     

磁控溅射制备ZnO薄膜的受激发射特性的研究

用射频磁控反应溅射法在二氧化硅衬底上制备ZnO薄膜。得到了在不同温度下ZnO薄膜的吸收与光致发光。观测到了纵光学波 (LO)声子吸收峰与自由激子吸收峰 ;室温 (30 0K)下 ,PL谱中仅有自由激子发光峰。这些结果证实了ZnO薄膜具有较高的质量。探讨了变温ZnO薄膜的发光特性。研究了ZnO薄膜的受激发射特性。     

双阳极磁控注入枪束流特性的研究

 介绍了用于34GHz基波回旋速调管的双阳极磁控注入枪的结构特点，为了准确分析磁控注入枪的束流特性，建立了阴极表面理论模型，用新编制的程序模拟了电子轨迹。模拟和测量结果显示磁场对磁控注入枪的束流有影响，磁控注入枪的束流也与阴极温度和空间电荷效应有关系。     

1THz回旋管双阳极磁控注入电子枪的分析及设计

基于电子光学理论,通过编程进行大量的数值计算,设计了一支用于1THz回旋管的双阳极磁控注入式电子枪.对双阳极磁控注入电子枪的计算及设计进行了阐述,并对1 THz回旋管电子枪中高磁压缩比(f_m=125)可能导致电子反转的问题进行了详细的分析和模拟.通过对电子枪进行了仿真和优化,最后计算和设计了一支速度比适中(α=1.3),速度零散较小(Δβ<8%) 的电子枪.     

鲁米诺-铁氰化钾化学发光体系快速分析生物样品中莱克多巴胺

该文建立了新的流动注射-化学发光快速测定莱克多巴胺的分析方法。基于碱性介质中莱克多巴胺对鲁米诺-铁氰化钾体系化学发光的增敏作用,研究了各因素对化学发光的影响。结果表明,在最佳发光条件下,相对发光强度与莱克多巴胺浓度在4.0×10-9～8.0×10-7 g.mL-1范围内呈良好的线性关系,检出限为2.5×10-9 g.mL-1,相对标准偏差为5.6%。应用该方法成功分析了猪肉和尿样中莱克多巴胺的含量,回收率为69.3%～101.3%,结果令人满意。     

Design of magnet and control of the beam emittance for Penning H- ion source

The design requirement and principle of the deflection magnet for Magnetron and Penning H- ion source are discussed.It is proved that there exists a maximum emittance for the beam that may be transformed by the magnet into a state with equal Twiss parameters of αr=αy and βr =βy,which is the requisite condition to get a minimum emittance at the entrance of RFQ after transporting by a LEBT with solenoids.For this maximum emittance,the corresponding magnetic field gradient index is 1.     

Influence of injection patterns on chaos synchronization performance between a multimode laser diode and a single-mode laser

In this paper, based on a system composed of a multimode emitted laser diode and a single-mode received laser, chaos synchronization performance has been investigated numerically under different optical injection patterns. The results show that, for single mode injection (SMI) which means the received laser is injected by a selective longitudinal mode of the multimode emitted laser whose wavelength corresponds to that of the single-mode received laser, the system synchronization performance is better than that with multi mode injection (MMI); depending on the optical spectrum of the received laser, the physical mechanism of chaos synchronization deterioration for MMI is given. Additionally, after taking into account the parameter mismatches, the chaos synchronization performance of the system with different injection pattern have also been discussed. For either SMI or MMI, the synchronization performance with negative parameter mismatches is better than that with positive parameter mismatches.     

Improved device performance in nonpolar a ‐plane GaN LEDs using a Ni/Al/Ni/Au n‐type ohmic contact

The authors report upon the increased light‐output power (P_out) via a reduction in the forward voltage (V_f) for nonpolar a ‐plane GaN LEDs using Ni/Al/Ni/Au n‐type ohmic contacts. The specific contact resistivity of the Ni/Al/Ni/Au contact is found to be as low as 5.6 × 10^–5 whereas that of a typical Ti/Al/Ni/Au contact is 6.8 × 10^–4 Ω cm², after annealing at 700 °C. The X‐ray photoelectron spectroscopy results show that the upward surface band bending is less pronounced for the Ni/Al contact compared to the Ti/Al contact, leading to a decrease in the effective Schottky barrier height (SBH). The V_f of the nonpolar LEDs decreases by 10% and P_out increases by 15% when the Ni/Al/Ni/Au scheme is used instead of the typical Ti/Al/Ni/Au metal scheme. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

微波注入反相器基本电路的非线性效应

采用理论分析和微波注入实验相结合的方法,分别研究了以74HC04和74LVCU04A两种芯片为核心的反相器基本缓冲及数模转换电路的微波效应问题,通过反相器闩锁过程对非线性扰乱进行了机理分析,并利用微波注入实验详细分析了非线性扰乱效应的微波有效功率阈值及其随频率、脉冲宽度的变化。实验结果表明：在固定环境温度条件下,有效注入功率大于33 dBm,频率在3 GHz以下的微波均可使74HC04效应电路的非线性扰乱强度达到10%以上;有效注入功率大于30 dBm,频率在3 GHz以下的微波均可使74LVCU04A效应电路的非线性扰乱强度达到10%以上。相同非线性扰乱强度的注入有效功率阈值近似随频率的提高而增大。非线性扰乱阈值随注入微波信号脉宽变化明显,拐点为40~70 ns不等,与反相器中的互补型金属氧化物半导体器件寄生三级管的导通电流积累有关。