Determination and analysis of dispersive optical constant of TiO2 and Ti2O3 thin films

Electron beam evaporation technique was used to prepare TiO₂ and Ti₂O₃ thin films onto glass substrates of thicknesses 50, 500 and 1000 nm for each sample. The structural investigations revealed that the as-deposited films are amorphous in nature. Transmittance measurements in the wavelength range (350-2000 nm) were used to calculate the refractive index n and the absorption index k using Swanepoel's method. The optical constants such as optical band gap , optical conductivity σ_opt, complex dielectric constant, relaxation time τ and dissipation factor tan δ were determined. The analysis of the optical absorption data revealed that the optical band gap E_g was indirect transitions. The optical dispersion parameters E_o and E_d were determined according to Wemple and Didomenico method.     

Electronic,structural and magnetic properties of TbO under pressure: FP-LAPW study

ABSTRACT

Using the framework of the density functional theory, we calculated electronic, magnetic and structural properties of terbium oxide (TbO) in rocksalt (RS), cesium chloride (CsCl) and zincblende (ZB). Full potential linearized augmented plane wave (FP-LAPW) method within the local spin density approximation (LSDA) and generalized gradient (PBE-GGA) approximations are used. Magnetic and non-magnetic calculations are performed and a modified version of Becke and Johnson (mBJ) exchange potential has been used to calculate the band gaps. We found that, although TbO is stable in a ferromagnetic state, it is stable in RS phase at ambient condition. Both LSDA and PBE-GGA calculations revealed that the three structures are metallic. However, using the mBJ calculation, it is clear that RS and CsCl phases of TbO compound are metallic, while ZB phase is found to be an insulator in the spin-up case and a semiconductor in the spin-down case at ambient pressure.     

Sr掺杂对La_(1-x)Sr_xMnO_3/LaAlO_3/SrTiO_3界面电子结构的影响

采用基于密度泛函理论的第一性原理计算方法,系统地研究了La_(1-x)Sr_xMnO_3层中Sr的掺杂方式和掺杂量对4La_(1-x)Sr_xMnO_3/3LaAlO_3/4SrTiO_3(LSMO/LAO/STO)异质结构原子和电子结构的影响.结果表明:对于相同的Sr掺杂量,掺杂方式的差异对体系电子结构的影响微弱,不会导致体系发生金属-绝缘体转变;掺杂量的不同对体系电子结构有着显著的影响,当Sr的掺杂量较少时,LAO/STO界面处存在着准二维电子气,当Sr的掺杂量高于1/3时,LAO/STO界面处准二维电子气消失.我们相信,Sr的引入以及通过Sr掺杂量的改变可以对LSMO覆盖层极化进行调控,这也是导致体系LAO/STO界面处金属-绝缘体转变的可能原因,进一步为极化灾变机制导致的界面处电子重构提供了证据.     

Influence of aging time of the starting solution on the physical properties of fluorine doped zinc oxide films deposited by a simplified spray pyrolysis technique

Fluorine doped zinc oxide (FZO) films were fabricated from fresh and aged (4, 8, 12 and 16 days) starting solutions using a simplified and low cost spray pyrolysis technique. The X-ray diffraction study showed that the preferential orientation is along the (0 0 2) plane for all the films irrespective of the age of the solution. The crystallite size calculated using the Scherrer’s formula is comparatively smaller only for the film prepared from the starting solution having aging time 4 days which may be due to the efficient incorporation of fluorine atoms into the ZnO lattice. This phenomenon is confirmed by the minimum resistivity value (3.14 × 10⁻² Ω cm) obtained in this particular case. The visible transmittance and the optical band gap values are found to be in the range of 63–83% and 3.20–3.31 eV, respectively. The optical transmittance is found to decrease gradually as the aging time of the solution increases and the optical band gap is found to be slightly higher in the case of the film prepared from the fourth day solution. The scanning electron microscopy results depicted that the microstructure of ZnO:F films are largely influenced by the aging of the starting solution.     

The interfacial properties of MgCl2 films grown on a flat SiO2/Si substrate. An XPS and ISS study

The interaction between MgCl₂ and SiO₂ was investigated by X-ray photoelectron spectroscopy (XPS), ion scattering spectroscopy (ISS) and contact potential difference (CPD) measurements. A thin SiO₂ layer was grown for this purpose on a Si(1 0 0) wafer and MgCl₂ was applied on this support at room temperature by evaporation under UHV conditions. It was found that magnesium chloride is deposited molecularly on the SiO₂ substrate, growing in layers and covering uniformly the oxide surface. The interaction with the substrate is initially very weak and limited to the interfacial layer. Above 623 K, most of the molecular MgCl₂ is re-evaporated and the interfacial interaction becomes stronger, as Mg-Cl bonds in the remaining sub-monolayer chloride break and Cl atoms desorb. This leaves on the surface sub-stoichiometric MgCl_x, which interacts with oxygen atoms from the substrate to form a complex surface species. At 973 K all Cl atoms desorb and Mg remains on the surface in the form of an oxide.     

Nucleation and growth mechanism for flame synthesis of MoO2 hollow microchannels with nanometer wall thickness

The growth and morphological evolution of molybdenum-oxide microstructures formed in the high temperature environment of a counter-flow oxy-fuel flame using molybdenum probes is studied. Experiments conducted using various probe retention times show the sequence of the morphological changes. The morphological row begins with micron size objects exhibiting polygonal cubic shape, develops into elongated channels, changes to large structures with leaf-like shape, and ends in dendritic structures. Time of probe–flame interaction is found to be a governing parameter controlling the wide variety of morphological patterns; a molecular level growth mechanism is attributed to their development. This study reveals that the structures are grown in several consecutive stages: material “evaporation and transportation”, “transformation”, “nucleation”, “initial growth”, “intermediate growth”, and “final growth”. XRD analysis shows that the chemical compositions of all structures correspond to MoO₂.     

Stability of valence alternation pairs across the substoichiometric region at Ge/GeO2 interfaces

Through hybrid density functional calculations, we compare the Ge–Ge bond energy with the formation energy of a valence alternation pair as the O concentration varies across the Ge/GeO₂ interface. First, hole trapping energies are calculated for three atomistic models with different O concentrations: bulk Ge with isolated O atoms, amorphous GeO, and amorphous GeO₂ with an O vacancy. The reaction is then broken down in three steps involving the breaking of a Ge–Ge bond, charge transfer processes involving dangling bonds, and the formation of a threefold coordinated O atom. The energy of each elemental reaction is estimated through suitable model calculations. The charge transition levels resulting from this analysis agree with those obtained for the atomistic models. Our estimates indicate that hole trapping at low O concentrations occurs at no energy cost for p-type germanium owing to the formation of threefold-coordinated O atoms. Applied to n-type Ge, our analysis indicates that electron trapping in dangling bonds obtained from the breaking of Ge–Ge bonds is unfavorable. The formation energy of a valence alternation pair is evaluated and discussed in relation to previous results.     

Improved GaSb surfaces using a (NH4)2S/(NH4)2S04 solution

Bulk (1 0 0) n-GaSb surfaces have been treated with a sulphur based solution ((NH₄)₂S/(NH₄)₂SO₄) to which sulphur has been added, not previously reported for the passivation of GaSb surfaces. Au/n-GaSb Schottky barrier diodes (SBDs) fabricated on the treated material show significant improvement compared to that of the similar SBDs on the as-received material as evidenced by the lower ideality factor (n), higher barrier height (?_b) and lower contact resistance obtained. Additionally, the reverse leakage current, although not saturating, has been reduced by almost an order of magnitude at −0.2 V. The sample surfaces were studied by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The native oxide, Sb–O, present on the as-received material is effectively removed on treating with ([(NH₄)₂S/(NH₄)₂SO₄]+S) and (NH₄)₂S. Analysis of the as-received surface by XPS, prior to and after argon sputtering, suggests that the native oxide layer is ≤8.5 nm.     

Effect of thermal treatment in vacuum on Fe-doped SnO2 powders

A sample of 10 at% Fe-doped SnO₂ powder was prepared by mechanical alloying and then thermally treated at 773 K in vacuum. The fit of the diffraction patterns and X-ray absorption spectroscopy measurements revealed that the as milled sample was pure doped rutile. Fe dissolved into SnO₂ was found in Fe²⁺/Fe³⁺ ionic valence with mainly paramagnetic behavior. After the thermal treatment all techniques indicate the formation of the ternary Sn_0.36Fe_2.64O₄ spinel phase, which is responsible for the observed ferromagnetism.     

Structure of Na2O·MO·SiO2·CaF2 (M=Mg,Ca) oxyfluoride glasses

(9−x)CaO·xMgO·15Na₂O·60SiO₂·16CaF₂(x=0, 2, 4, 6, and 9) oxyfluoride glasses were prepared. Utilizing the Raman scattering technique together with ²⁹Si and ¹⁹F MAS NMR, the effect of alkaline metal oxides on the Q species of glass was characterized. Raman results show that as magnesia is added at the expense of calcium oxide, the disproportional reaction Q³→Q⁴+Q² (Qⁿ is a SiO₄ tetrahedron with n bridging oxygens) prompted due to the high ionic field strength of magnesia, magnesium oxide entered into the silicate network as tetrahedral MgO₄, and removed other modifying ions for charge compensation. This reaction was confirmed by ²⁹Si MAS NMR. ¹⁹F MAS NMR results show that fluorine exists in the form of mixed calcium sodium fluoride species in all glasses and no Si–F bonds were formed. As CaO is gradually replaced by MgO (x=6, 9), a proportion of the magnesium ions combines with fluorine to form the MgF⁺ species. Meanwhile, some part of Na⁺ ions complex F⁻ in the form of F–Na(6).