High-density plasma etching of indium-zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl₂-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH₄/H₂/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl₂ discharges is smooth, whereas that after etching in CH₄/H₂/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH₄/H₂/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH₄/H₂/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.     

Dynamic response of permalloy/Cu/Co magnetoresistive sandwiches

The dynamic response of trilayer magnetoresistive permalloy/Cu/Co films was studied by high-frequency permeability spectra measurements. The resonance frequency is shown to depend on the interlayer copper thickness. This dependence is related to exchange coupling between permalloy and cobalt and the interaction field is estimated using the Landau–Lifschitz–Gilbert model.     

A microprocessor based autoscanner for electromigration studies in thin films

Mass transport due to electromigration can be estimated if the diffusion coefficientD and the electromigration effective charge numberZ* are known. Neutron activated tracer scanning method determine the radioactivity at different positions. An automatic scanning system for determining the radioactive concentration profiles developed using a microprocessor is described in this paper. Using the radioactive concentration profiles the electromigration shift is determined. From this shift the electromigration effective charge numberZ* is calculated. The system developed was tested for tin thin films.     

Nanostructure characterization of high k materials by spectroscopic ellipsometry

In this work, the optical and structural properties of high k materials such as tantalum oxide and titanium oxide were studied by spectroscopic ellipsometry, where a Tauc-Lorentz dispersion model based in one (amorphous films) or two oscillators (microcrystalline films) was used. The samples were deposited at room temperature by radio frequency magnetron sputtering and then annealed at temperatures from 100 to 500 °C. Concerning the tantalum oxide films, the increase of the annealing temperature, up to 500 °C does not change the amorphous nature of the films, increasing, however, their density. The same does not happen with the titanium oxide films that are microcrystalline, even when deposited at room temperature. Data concerning the use of a four-layer model based on one and two Tauc-Lorentz dispersions is also discussed, emphasizing its use for the detection of an amorphous incubation layer, normally present on microcrystalline films grown by sputtering.     

蓝光相变光盘的多层膜结构设计

为了使光盘获得优良的记录／读出性能并能够长期稳定地使用，必须优化设计相变光盘的多层膜结构。采用自行设计的模拟分析相变光盘读出过程设计软件，从光学角度出发模拟计算了蓝光(405nm)相变光盘的膜层结构，研究了多层膜系的反射率和反射率对比度等光学参量与各层膜厚度和槽深的关系。研究得出的最佳多层膜结构为：下介电层／记录层／上介电层／反射层的厚度对于台记录为100nm／10nm／25nm，／60nm，而对于槽记录则为140nm／15nm／30nm，／60nm，槽深为50nm。模拟计算结果对于将来高密度蓝光相变光盘的制备具有一定的指导意义。     

The role of variable surface charge and surface complexation in the adsorption of humic acid on magnetite

The ionic strength dependence of humic acid (HA) adsorption on magnetite (Fe₃O₄) was investigated at pH 5, 8 and 9, where variable charged magnetite is positive, neutral and negative, respectively. The adsorption studies revealed that HA has high affinity to magnetite surface especially at lower pH, where interacting partners have opposite charges. However, in spite of electrostatic repulsion at pH 9 notable amounts of humate are adsorbed. Increasing ionic strength enhances HA adsorption at each pH due to charge screening. The dominant interaction is probably a ligand-exchange reaction, nevertheless the Coulombic contribution to the organic matter accumulation on oxide surface is also significant under acidic condition. The results from size exclusion chromatography demonstrate that the smaller size HA fractions enriched with functional groups are adsorbed preferentially on the surface of magnetite at pH 8 in dilute NaCl solution.     

Lanthanum nitrate decomposition by both temperature programmed heating and citrate gel combustion

Thermal decomposition of lanthanum nitrate to lanthanum oxide was carried out by both temperature programmed heating (TPH) and citrate-gel combustion. The temperature programmed heating was carried out under flow of oxidizing (air), neutral (nitrogen) and reducing (25 vol.% hydrogen+argone mixture) gases, and the processes were controlled by simultaneous thermogravimetry and differential thermal analysis. It was shown that hydrogen atmosphere helps to reduce temperatures of all decomposition steps. The results of TPH were utilized to check the nature of residues in the products of lanthanum nitrate-to-oxide conversion performed via citrate-gel combustion technique.     

基片温度对坡莫合金薄膜结构和磁电阻的影响

用磁控溅射方法制备了系列坡莫合金Ni80Fe20薄膜。利用X射线衍射、扫描电子显微镜和原子力显徽镜分析了薄膜的结构、晶粒取向、薄膜厚度、截面结构和表面形态。用4点探测技术测量了薄膜的电阻和磁电阻。结果表明：随衬底温度的升高，晶粒明显长大。膜内的缺陷和应力显著减小，而且增强了薄膜晶粒的[111]择优取向。结果表明，薄膜电阻率显著减小，而磁电阻显著增大。     

Wavelength dependence in photochemical vapor deposition of aluminum film using dimethylaluminum hydride

In photochemical vapor deposition of aluminum film on silicon using dimethylaluminum hydride, (CH₃)₂AlH, a surface reaction dominated below a (CH₃)₂AlH pressure of 0.3 m Torr at 200°C, which was induced only with the 160 nm band emitted from a deuterium lamp. A gas-phase reaction occurred above 0.3 mTorr at 200°C, which could be induced by both 160 nm and 240 nm emission bands from the lamp. To distinguish between surface ad gas-phase reactions, a thickness profile was used. At 240°C the surface reaction could be induced even by the 240 nm band, while the deposits formed under illumination of the two bands were thinner than those obtained with only the 240 nm band, indicating occurrence of vacuum ultraviolet (VUV)-enhanced desorption. The mechanism responsible for the observed wavelength dependence in unclear. The electrical resistivity of the films deposited at 200°C was 4.5 μΩ cm, which did not change with wavelength.     

Time-marching numerical schemes for the electric field integral equation on a straight thin wire

We derive and analyse four algorithms for computing the current induced on a thin straight wire by a transient electric field. They all involve solving the thin wire electric field integral equations (EFIEs) and consist of a very accurate differential equations solver together with various schemes to approximate the vector potential integral equation. We carry out a rigorous numerical stability analysis of each of these methods. This has not previously been done for solution schemes for the thin wire EFIEs. Each scheme is shown to be stable and convergent provided the radius of the wire is small enough for the thin wire equations to be a valid model.