Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on -SiC substrates

We have succeeded in obtaining high critical electric fields from AlGaN layers using the p-InGaN/i-Al_xGa_1−xN/n-Al_xGa_1−xN (x=0–0.22) vertical conducting diodes grown on n-SiC substrates by low-pressure metalorganic vapor phase epitaxy (MOVPE). The breakdown voltage (V_B) increases with increasing Al composition of the AlGaN layer. The corresponding critical electric fields are calculated to be 2.4 MV/cm for GaN and 3.5 MV/cm for Al_0.22Ga_0.78N. The critical electric field is proportional to the bandgap energy to a power of 2.5. This bandgap energy dependence is much stronger than that in the empirical expression proposed by Sze and Gibbons. The figure of merit, , increases with increasing Al composition, indicating the AlGaN-based p–i–n diodes are promising for high-power and high-temperature electronic device applications.     

Effective-Field Theory on High Spin Systems with Biaxial Crystal Field

Based on the effective-field theory with self-spin correlations and the differential operator technique,physical properties of the spin-2 system with biaxial crystal field on the simple cubic, body-centered cubic, as well as faced-centered lattice have been studied. The influences of the external longitudinal magnetic field on the magnetization,internal energy, specific heat, and susceptibility have been discussed in detail. The phenomenon that the magnetization in the ground state shows quantum effects produced by the biaxial transverse crystal field has been found.     

使用不同工质的会切磁场等离子体推力器

会切磁场等离子体推力器是一种利用磁镜约束等离子体产生推力的新型推力器,具有寿命长、推力大范围连续可调等优点,在无拖曳控制领域具有较大的应用前景.分别采用Xe,Kr和Ar三种不同工质,开展了会切磁场等离子体推力器实验.首先,对所用的推力器进行了简要的原理和设计介绍;然后,对三种工质的点火电压分别进行了测试,发现Xe是最容易点火成功的,Kr和Ar点火难度较大.在阳极电流、推力、效率和比冲等性能方面,三种工质在同等条件下也存在明显的区别.分析发现,三者的工质利用率高低导致了性能上的差别,通过提升通流密度能够大幅提升Kr和Ar的工质利用率.在羽流结构方面,法拉第测量结果表明三者都存在明显的空心羽流,且离子电流密度峰值出现的角度随着原子量的减小而逐渐减小.     

Complex multiplication of exactly solvable Calabi–Yau varieties

We propose a conceptual framework that leads to an abstract characterization for the exact solvability of Calabi–Yau varieties in terms of abelian varieties with complex multiplication. The abelian manifolds are derived from the cohomology of the Calabi–Yau manifold, and the conformal field theoretic quantities of the underlying string emerge from the number theoretic structure induced on the varieties by the complex multiplication symmetry. The geometric structure that provides a conceptual interpretation of the relation between geometry and conformal field theory is discrete, and turns out to be given by the torsion points on the abelian varieties.     

一些静电场能量公式的适用范围

讨论并给出了一些静电场能量公式的适用范围,指出明确公式的适用范围是运用这些公式的前提．     

永磁体空间磁场的分析计算及其在永磁磁力轴承中的应用

在介绍三种永磁体空间磁场计算模型的基础上,利用泛函理论分别推导出等效磁荷模型和等效电流模型对应的变分形式,并就等效磁荷模型详细地介绍了有限元法．由于等效磁荷模型使用仅有一个自由度的标量磁位,因而计算起来比具有三个自由度的矢量磁位的等效电流法更简便．从永磁磁力轴承磁场的计算算例中可以看出,用等效磁荷模型的有限元法计算永磁体空间磁场是非常简便和有效的．     

高温超导电缆终端预制式应力锥的设计与分析

高温超导电缆终端是高温超导电缆系统的重要组成部分。借鉴常规电缆终端预制式应力锥的设计理论,结合高温超导带材的特殊工作特性,选用耐低温的绝缘材料,对高温超导电缆终端预制式应力锥进行设计。运用有限元分析软件ANSYS对设计的高温超导电缆终端预制式应力锥进行建模和仿真计算,得到终端处的电场和电位分布,并将仿真结果和理论计算结果进行对比分析,验证设计的可行性,为进一步的研究奠定了基础。     

外电场下二氧化锆的分子结构及其特性

对O原子采用6-311++G*基组,Zr原子采用aug-cc-pVTZ-PP基组,利用密度泛函(B3P86)方法优化得到了ZrO2分子的稳定构型,并研究了不同外电场(0—0.025 a.u.)作用下ZrO2基态分子键长、能量、电荷分布、偶极矩和能级的变化规律.在优化构型的基础上,利用含时密度泛函(TD-B3P86)方法研究了ZrO2分子在外电场作用下前6个激发态的激发能、跃迁波长和振子强度的激发特性.研究结果表明:随着电场强度的增大,Zr—2O的键长增大,而Zr—3O的键长均匀减少,总能量降低,偶极矩增大;最高占据轨道能量基本保持不变,最低未占据轨道和能隙均减小.电场的增大使得激发能减小,各个激发态跃迁波长均发生不同程度的红移现象,因而,利用外电场可以控制ZrO2的发光光谱范围在可见-红外区域扩展.     

强磁场对金属离子掺杂CaTiO_3结构和光学性能的影响

研究了800℃条件下不同制备磁场强度(最高12 T)对Ca Ti O3及其浸渍掺杂样品在结构和光学性能方面的影响.研究表明:样品吸光性能随浸渍掺杂的离子浓度的增大而提升,且发生红移现象;相同掺杂浓度下,磁场下制备样品的吸光性能均较非磁场下制备的样品有所提高,但不同磁场强度下所制备样品的吸光曲线彼此差异不大;此外,磁制备纯Ca Ti O3晶体粉末的X-射线衍射曲线峰左移,紫外-可见漫反射光谱吸收截止波长增长,这表明强磁场可使Ca Ti O3晶面间距和晶格常数增大、禁带宽度减小.     

偶极子在径向非均匀介质中的电磁场分布

提出了柱状多层介质中的磁偶极子在任意介质层中的电磁场的递推算法，给出了磁偶极子产生的电磁波在柱状多层介质中的反射、透射系数和广义反射系数，从而得到了任意介质层中满足各层界面边界条件的电磁场解析表达式．