骨断裂力学概述

本文涉及近年来骨断裂力学的发展成果.对建立在张开型和剪切型断裂能基础上的方法作了回顾,并讨论了密度、试件厚度和裂纹速度对骨断裂的影响.最后简述了人股骨的试验研究.      

自动检测da/dN的微机系统

研制了一种da/dN自动检测系统;介绍了其工作原理和裂纹长度a及循环数N的采集方法;与传统的目测法做了对比;显示了该系统的优越性。     

Defect assessment procedure based on ductile tearing process

Strain hardening, crack growth resistance and nonuniform load distribution have significant effects on the ductile tearing process. A defect assessment procedure incorporating with the above features is proposed in the present paper, with the final appearance of “design curves” to facilitate engineering applications.     

The dynamics of random interfaces in phase transitions

A review is given of recent developments involving the dynamics of random interfaces formed in the evolution of metastable and unstable systems. Topics which are discussed include interface growth and nonequilibrium dynamical scaling. The possibility of there being dynamical universality classes in first-order phase transitions is also discussed. There are a large number of systems of experimental interest which include binary alloys, binary fluids, and polymer mixtures. Other systems studied by computer simulation include the kinetic Ising, Potts, andZ _N models.Work supported by NSF grant No. DMR-8013700.     

超长定向含铁多壁碳纳米管阵列的制备

采用无模板化学气相沉积法,以二茂铁为催化剂,二甲苯为碳源,利用单温炉加热装置制备了定向碳纳米管阵列。运用扫描电子显微镜、透射电子显微镜、拉曼光谱和X射线衍射仪等对定向碳纳米管阵列的形貌、成分和物相进行细致的分析和表征。结果表明:制得的碳纳米管阵列具有良好的定向性和多壁管状结构,并且石墨化程度高;碳纳米管中除碳元素外,管中包含有少量以纳米颗粒和纳米线形式存在的铁及其化合物,主要成分是铁和碳化铁。结合碳纳米管的制备和透射电子显微镜分析表征结果,认为超长碳纳米管阵列的生长模式为底部生长方式,即经历催化剂分解、催化、成核、长大、中毒、凝聚成粒和连接成线的循环过程,正是由于碳源和催化剂的连续供应促成了碳纳米管阵列的快速定向生长。     

Fabrication of BDD quantum node switches on embedded GaAs quantum wires grown by selective MBE

In view of applications to hexagonal binary decision diagram (BDD) LSIs, a first attempt is made to form quantum BDD node switches on selectively grown (SG) embedded quantum wires (QWRs) by molecular beam epitaxy (MBE). SG branch switches controlled by a Schottky wrap gate (WPG) were successfully fabricated by MBE growth and subsequent device processing. Gate control characteristics were studied by gate-dependent Shubnikov–de-Haas measurements, and the behavior was found to be similar to that of devices fabricated on wires by etching. The switch exhibited clear conductance quantization at low temperature, and temperature dependence of the voltage slope of conductance jump was clarified. A Y-branch BDD node device using two SG branch switches was successfully fabricated, and realized clear path switching characteristics.     

Experimental confirmation by galvanomagnetic methods of a complex transport model in In0.53Ga0.47As layers deposited by MBE on SI-InP

At low temperatures In_0.53Ga_0.47As samples show an increase of carrier concentration, which can be explained in terms of a two carriers transport model. This type of problem exists since the beginning of the semiconductor era, dating back to monocrystalline germanium.We propose that in all the investigated layers, there are X atoms or charged dislocations in the region of the first monolayers, which are built in during epitaxial growth. The layers were intentionally undoped. They form an impurity band in which low mobility carriers dominate over the localised electron scattering due to the s-d exchange interaction. These carriers do not freeze out at liquid helium temperature and give rise to two transport media for electrons; a conduction band at higher temperatures and an impurity band at lower temperatures. The electron which fall down onto the previously ionised X atoms, then move by thermally activated hopping. We show that the two carriers model for In_0.53Ga_0.47As epitaxial layers are confirmed by the carrier concentration-temperature, carrier concentration-magnetic field, resistivity-magnetic field behaviour, and also by YKA theory also. The differences between the two transport models are so distinctive that observed phenomena may exist. This paper presents experimental results, which constitute comprehensive evidence for the complicated structure of the semiconductor epitaxial layers on the sample of n-type In_0.53Ga_0.47As/InP layer with n=2.2×10¹⁵/cm³.     

Growth and optical characterization of organic nonlinear optical crystal: indole-3-aldehyde

The metastable zone width for the solution of organic nonlinear material: indole-3-aldehyde (IA) has been determined for the various solvents of acetone, methanol and ethyl acetate and the corresponding IA crystals have been grown by temperature lowering technique. The surface analysis on different planes of the grown crystals has been carried out. The range of transmission and powder second harmonic generation efficiency of IA have been reported.     

Controllable synthesis,characterization,and growth mechanism of hollow Zn_x Cd_(1-x) S spheres generated by a one-step thermal evaporation method

Novel hollow ZnxCdl xS spheres that are uniform in size are synthesized through the one-step thermal evaporation of a mixture of Zn and CdS powder. From an X-ray diffraction （XRD） study, the hexagonal wurtzite phase of ZnxCdl_xS is verified, and the Zn mole fraction （x） is determined to be 0.09. According to the experimental results, we propose a mechanism for the growth of Zn0.09Cd0.91S hollow spheres. The results of the cathodoluminescence investigation indicate uniform Zn, Cd, and S distribution of alloyed Zn0.09Cd0.91S, instead of separate CdS, ZnS, or nanocrystals of a core- shell structure. To the best of our knowledge, the fabrication of ZnxCd1-xS hollow spheres of this kind by one-step thermal evaporation has never been reported. This work would present a new method of growing and applying hollow spheres on Si substrates, and the discovery of the Zn0.09Cd0.91S hollow spheres would make the investigation of ZnxCd1-xS micro/nanostructures more interesting and intriguing.     

Photocatalytic degradation efficacy of Bi4Ti3O12 micro-scale platelets over methylene blue under visible light

〈001〉 textured Bi₄Ti₃O₁₂ platelets with micro scale size were synthesized by a facile molten salt method. The photocatalytic activities of the as-prepared samples were measured with the photodegradation of methylene blue at room temperature under visible light irradiation. The Bi₄Ti₃O₁₂ with the aspect ratio of 35 exhibited good absorption in the visible light region and the photodegradation against methylene blue was higher than that of anatase TiO₂ reference, showing that the high degree of preferred {001} facets on the plate surface benefits the electronic transmission. In addition, the layer-pervoskite structure facilitates the mobility of the photogenerated carriers and hampers their recombination. The above results indicated that the large specific surface area of the as-prepared samples could attribute to the presence of a number of oxygen vacancies and then lead to the good photo-electric property. This work proposed an alternative way to tailor the structure of micro-sized platelets to get excellent properties comparable to the nano materials.